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    EDI88512CA25CB Search Results

    EDI88512CA25CB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EDI88512CA25CB White Microelectronics 25ns 5V power supply 512K x 8 monolithic SRAM, SMD 5962-95600 Original PDF

    EDI88512CA25CB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AS27C256-20JM

    Abstract: WF1M32B-100G2UM3 qp7c199 ACT-S512K32N-017P7Q QP7C1009B-20DMB WF1M32B-120G2UM3 IDT71256L25TCB AS5C2008 AS8S512K32Q 57C256F-55
    Text: Part Number 1 of 66 Config Device Type Volt Packages Micross Part Number SMD 5962- 57C256F-55 32Kx8 UVEPROM 5V 57C256F-55 32Kx8 UVEPROM 5V 57C256F-70 32Kx8 UVEPROM 5V 57C256F-70 32Kx8 UVEPROM 5V ACT-E128K32C120P7Q 128Kx32 EEPROM 5V ACT-E128K32C140P7Q 128Kx32 EEPROM 5V


    Original     		PDF 57C256F-55 32Kx8 57C256F-70 ACT-E128K32C120P7Q 128Kx32 ACT-E128K32C140P7Q AS27C256-20JM WF1M32B-100G2UM3 qp7c199 ACT-S512K32N-017P7Q QP7C1009B-20DMB WF1M32B-120G2UM3 IDT71256L25TCB AS5C2008 AS8S512K32Q 57C256F-55

    EDI88512CA20N36B

    Abstract: QML-38535 e13009 5962-95600 GDIP1-T32 CY7C1048-45F 5962-9560002MXA 5962-9560015QMA 5962-9560002MYA AS5C4008CW
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED A Change minimum limit of dimension Q for case outline T. Changes in accordance with NOR 5962-R145-97. 96-11-27 Raymond Monnin B Add note 4/ to tWLQZ, tCDR, and tR in table I. Add note 5/ to tELQX, tWHQX, tOLQX, and tOHQZ in table I. Add case outline 8. Change dimensions b,


    Original     		PDF 5962-R145-97. 0EU86 6S055 EDI88512CA20N36B QML-38535 e13009 5962-95600 GDIP1-T32 CY7C1048-45F 5962-9560002MXA 5962-9560015QMA 5962-9560002MYA AS5C4008CW

    TSMC 0.18 um MOSfet

    Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
    Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes


    Original     		PDF QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221

    GDIP1-T32

    Abstract: CY7C1048-45F CY7C1048 qml-38535 5962-95600 5962-9560003MXA smd marking code tm 5962-9560004MYA ed188512 EDI88512CA20N36B
    Text: REVISIONS LTR ] DESCRIPTION DATE APPRO VED YR-MO-DA A Change minimum limit of dimension Q for case outline T. Changes in accordance with NOR 5962-R 145-97. 96-11-27 Raymond Monnin B Add note 4 / to \ \ j\ _ q z ’ ^ D R ’ anc* *R 'n tab'e Add note 5/ to % |_qx.


    OCR Scan     		PDF 5962-R145-97. OEU86 TD0470Ã D032M4T GDIP1-T32 CY7C1048-45F CY7C1048 qml-38535 5962-95600 5962-9560003MXA smd marking code tm 5962-9560004MYA ed188512 EDI88512CA20N36B

    EDI88512CA

    Abstract: EDI88128CS EDI8M8512C
    Text: EDI88512CA ELECTRONIC DESGNS IN C .1 Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Features The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC evolu­ tionary standard for the four megabit device and is a


    OCR Scan     		PDF EDI88512CA 512Kx8 EDI88512CA 512Kx EDI8M8512C. EDI88128CS. 0GC2022 EDI88128CS EDI8M8512C

    EDI88512CA20NB

    Abstract: EDI88512CA45 and45ns TM315
    Text: EDI88512CA m o \ ELECTRONIC D ESG N S INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic r a The 32 pin DIP pinout adheres to the JEDEC evolu­ tionary standard for the four megabit device and is a replacement for the 512K x 8 module, EDI8M8512C. All


    OCR Scan     		PDF EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. EDI88128CS. EDI88512CA20NB EDI88512CA45 and45ns TM315

    EDI88512LPA17NI

    Abstract: No abstract text available
    Text: W D EDI88512CA \ 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version


    OCR Scan     		PDF EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. 6/96ECO EDI88512LPA17NI

    7587 GE

    Abstract: EDI88512CA17N361 EDI88512LPA20F32B EDI88512CA20N36B
    Text: W D EDI88512CA \ 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 512m Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 1T 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version


    OCR Scan     		PDF EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. EDI88128CS. 20VA/V 6/96ECO 7587 GE EDI88512CA17N361 EDI88512LPA20F32B EDI88512CA20N36B

    A35Z

    Abstract: EDI88512CA35CB EDI88512C
    Text: ^ED I EDI88512CA ELECTRONIC DESIGNS IN C • Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic Ik M /h Features The ED I88512C A is a 4 m egabit M onolithic CMOS 512Kx8 bit CM OS Static S tatic RAM. Random Access M em ory • Access Tim es: 2 5 ,3 5 , and 45ns


    OCR Scan     		PDF EDI88512CA 512Kx8 I88512C 8512C. EDI88128CS. EDI88512CA25CB EDI88512CA25CC EDI88512CA25CI 006I0 A35Z EDI88512CA35CB EDI88512C

    ED188512CA17

    Abstract: EDI88512CA20N36B 2A153 ED188512CA
    Text: W D\ EDI88512CA 512Kx8 Static Ram ELÈCTRON« 0ESK3N& NC. 512Kx8Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory • Access Times: 17*, 20,25,35, and 45ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. • Data Retention Function LP version


    OCR Scan     		PDF EDI88512CA 512Kx8 512Kx8Static EDI88512CA 15X/W 01581USA ED188512CA17 EDI88512CA20N36B 2A153 ED188512CA