edi r diode
Abstract: diode Standard Recovery diode YS 040
Text: NVD NVDX ARRAYS NIGHT VISION H.V. RECTIFIER DIODES & ARRAYS These diodes and arrays have been specifically designed for use in night vision and image intensifier equipment power supplies. They offer unusual characteristics that have not been previously available. As a result of a proprietary EDI diffusion process, they feature small size
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360MAX
edi r diode
diode Standard Recovery
diode YS 040
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RUSH
Abstract: RUSH103 RUSH104 RUSH105
Text: RUSH 50ns ULTRA-FAST RECOVERY HIGH -VOLTAGE RECTIFIER DIODES PRV to 5,000 Volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 3000 4000 5000 EDI type RUSH103 RUSH104 RUSH105 ELECTRICAL CHARACTERISTICS at TA =25 o C Unless Otherwise Specified
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RUSH103
RUSH104
RUSH105
and100
200MA
400MA
100MA
RUSH
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES • Up to 250 ns max. recovery • Small size • Exceptionally low leakage • Avalanche characteristics R E V E R S E R E C O V E R Y T IM E EDI PRV Type Volts 3W 2 2,000 not applicable 3W 2.5
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Untitled
Abstract: No abstract text available
Text: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics PRV 3000 4000 5000 EDI type RUSH103 R U S H 104 RUSH105 ELECT R ICAL CH ARACTERISTICS at TA = 25°C, Unless Otherwise Specified
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RUSH103
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200mA,
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Untitled
Abstract: No abstract text available
Text: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics PRV 3000 EDI type R U S H 103 4000 5000 R U S H 104 R U S H 105 ELECT R ICA L CH ARACTERISTICS at TA = 25°C, Unless Otherwise Specified
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200mA,
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edi rectifier rush 103
Abstract: No abstract text available
Text: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES ✓ PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics P RV 3000 4000 5000 EDI type R U S H 103 R U S H 104 R U S H 105 ELECTRICAL CHARACTERISTICS at TA = 25°C , Unless Otherwise Specified
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200mA,
edi rectifier rush 103
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7 segment display sm 42056
Abstract: 7 Segment sm 42056 7 segment display sm 42056 national instrument kp series stepper motor japan servo co ru 94v0 ltc 126 sm 42056 siemens SID 801 smd marking 271 Sot helipot 7286 r10k l.25 helipot 7286 potentiometer
Text: SI technologies ' CORPORATION THIRD EDI TI ON .Ü a IV! • m ? , ,I • Passive Netw orks f it k R e s i s t o r s?Vu. Chip • ^ fs< _ ' Power L * '• ^ Resistors ^ ~ * «s» -h r ,? 7 , ^ Trim m ers „ i * M r «2 • i rP Di i ¿r1" Me ¡t f r osition
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Untitled
Abstract: No abstract text available
Text: A D E - 2 0 8 - 3 5 6 F Z 2SK2529 Silicon N Channel MOS FET 7th. Edi ti on HITACHI Application High speed power switching Features • Low on-resistance R D S (o n ) = 7 m ß t y p . • High speed switching • 4 V gate drive device can be driven from 5 V source
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2SK2529
2SK2529
-220C
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Scans-0017357
Abstract: 20DI
Text: EDI S W A N MAZDA 20DI DOUBLE DIO DE Separate Cathodes Indirectly heated— for series operation REPLACEMENT TYPE R A T IN G H eater Voltage (volts) Heater C u rre n t (amps) M axim um Mean A n o d e C u rre n t per A nod e (m A) M axim um Peak A n o d e C u rre n t
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MMBTA5551
Abstract: EM401 MMBTA6520 MMBFJ174 MMBTA5401 j y w sot23 MMBTH918 smd diode 01C sot-23/BC327 SOT yo
Text: edi ELECTRONIC DEVICES, INC. 21 GRAY O AK S AVENUE • Y O NK ERS, N E W YORK 10710 3 1 4 - 9 6 5 - 4 - 4 0 0 • 1- 5 0 0 - 6"7B - O B 2 B . FA X 9 1 4 - 9 6 5 - 5 5 3 1 E -M A IL : E D I - S A L E S @ I N T E R N E T M C I .C O M SURFACE MOUNT DEVICES TRANSISTORS
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OT-23
MMBT2222A
MMBT3904
MMBT4401
MMBT2369
MMBT5089
MMBTA06
MMBTA42
MMBTA5551
MMBTA6517
EM401
MMBTA6520
MMBFJ174
MMBTA5401
j y w sot23
MMBTH918
smd diode 01C
sot-23/BC327 SOT yo
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edi minibridge pb20
Abstract: Rectifier edi minibridge edi minibridge PB edi pb20 6ca4 5r4wga MPI 140 120 bridge rectifier
Text: electronic devices, inc. Short Form Catalog 90 silicon bridge rectifiers low & hv diodes stock & custom hv assemblies ELECTRONIC DEVICES, INC. • 21 GRAY OAKS AVE., YONKERS, NY 10710 • 914-965-4400 • 800-678-0828 • FAX 914-965-5531 • TELEX 681-8047
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Untitled
Abstract: No abstract text available
Text: 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 8 KV 10 KV EDI S ER IES RUST2008 RUST2010 ELECTRICAL CHARACTERISTICS at TA = 25°C Unless Otherwise Specified
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RUST2008
RUST2010
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100DC
Abstract: at 3rw3 1 3RW22
Text: HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES • • • • Up to 250 ns max. recovery Small size Exceptionally low leakage Avalanche characteristics REVERSE RECOVERY TIME EDI Type PRV Volts Fig. 4 3W2 2,000 not applicable 3W2.5 2,500
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eDI 10 rectifier
Abstract: No abstract text available
Text: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics PRV 3000 4000 5000 EDI type RUSH103 RUSH104 RUSH105 ELECTRICAL CHARACTERISTICS at TA = 25 °C, Unless Otherwise Specified
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RUSH103
RUSH104
RUSH105
200mA,
eDI 10 rectifier
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RUST2006
Abstract: RUST2008 RUST2010
Text: AMERIC AN/ ELECTRO NIC b3E » • Qh7b743 0001007 3b7 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 6000 8000 10000
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Gb7b743
RUST2006
RUST2008
RUST2010
25/iA
0b7b743
RUST2010
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edi r diode
Abstract: No abstract text available
Text: NIGHT VISION H.V. RECTIFIER DIODES & ARRAYS These diodes and arrays have been specifically designed for use in night vision and image intensifier equipment power supplies. They offer unusual characteristics that have not been previously available. As a result of a pro
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Untitled
Abstract: No abstract text available
Text: 50ns ULTRA-FAST RECOVERY HIGH-VOLTAGE RECTIFIER DIODES PRV to 5,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche chracteristics PRV 3000 EDI type RUSH103 4000 5000 RUSH104 RUSH105 ELECTRICAL CHARACTERISTICS at TA = 25°C, Unless Otherwise Specified
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RUSH103
RUSH104
RUSH105
200mA,
0b7b743
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE—TVR 20 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for
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TVR-20
2500pF
UL94V
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eDI 10 rectifier
Abstract: No abstract text available
Text: 300 NANOSECOND AT 200°C HIGH TEMPERATURE— FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES • Exceptional high temperature stability up to 200°C • Exceptional low leakage • Small size • 3KV PRV Our proprietary diffusion and passivation process provides this unusual stability and
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE, HIGH CURRENT, FAST RECOVERY SILICON RECTIFIER DIODES • Up to 250 ns max. recovery • Small size • Exceptionally low leakage • Avalanche characteristics REVERSE RECOVERY TIME EDI Type PRV Volts Fig. 4 3W2 2,000 not applicable 3W2.5 2,500
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Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE FAST RECOVERY SILICON DIODE FOR CRT APPLICATIONS TYPE— TVR30 This high voltage fast recovery diode was developed for assembly or encapsulation and is intended primarily for use as a building block in the assembly of high voltage circuits for
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TVR30
UL94V
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Untitled
Abstract: No abstract text available
Text: 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 8 KV 10 KV EDI SERIES RUST2008 RUST2010 ELECTRICAL CHARACTERISTICS at TA = 25 °C Unless Otherwise Specified
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RUST2008
RUST2010
25/iA
Ran4400
214AOR
0b7b743
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Untitled
Abstract: No abstract text available
Text: 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 6000 8000 10000 EDI SERIES RUST2006 RUST2008 RUST2010 ELECTRICAL CHARACTERISTICS at TA = 25 °C Unless Otherwise Specified
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RUST2006
RUST2008
RUST2010
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PDF
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RUST2008
Abstract: No abstract text available
Text: 50ns ULTRA-FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES PIV to 10,000 volts 50ns ultra-fast recovery Small size Exceptionally low leakage High surge capability Avalanche characteristics PRV 8 KV 10 KV EDI SERIES RUST2008 RUST2010 ELECTRICAL CHARACTERISTICS at TA = 25 °C Unless Otherwise Specified
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RUST2008
RUST2010
25/iA
RUST2008
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