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    2SK2529 Search Results

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    2SK2529 Price and Stock

    Rochester Electronics LLC 2SK2529-90-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK2529-90-E Bulk 557 98
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    Rochester Electronics LLC 2SK2529-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK2529-E Bulk 259 98
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    Renesas Electronics Corporation 2SK2529-90-E

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    Rochester Electronics 2SK2529-90-E 557 1
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    Renesas Electronics Corporation 2SK2529-E

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    Rochester Electronics 2SK2529-E 259 1
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    2SK2529 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2529 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2529 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK2529 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK2529 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK2529 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK2529 Hitachi Semiconductor Silicon N-Channel MOS FET Scan PDF
    2SK2529-E Renesas Technology Silicon N Channel MOS FET Original PDF

    2SK2529 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DG12

    Abstract: Hitachi DSA002748
    Text: 2SK2529 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM D 12 3 1. Gate


    Original     		PDF 2SK2529 O-220CFM D-85622 DG12 Hitachi DSA002748

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2529 Silicon N-Channel MOS FET ADE-208-356F Z 7th. Edition Aug. 1995 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK2529 ADE-208-356F O-220CFM D-85622 Hitachi DSA00276

    2SK2529

    Abstract: DSA0037440
    Text: 2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM


    Original     		PDF 2SK2529 ADE-208-356F O-220CFM 2SK2529 DSA0037440

    Hitachi DSA001652

    Abstract: No abstract text available
    Text: 2SK2529 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM D 12 3 1. Gate


    Original     		PDF 2SK2529 O-220CFM Ch2000 D-85622 Hitachi DSA001652

    2SK2529

    Abstract: Hitachi DSA00116
    Text: 2SK2529 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece 2 1 1 2 3 3 1. Gate 2. Drain 3. Source


    Original     		PDF 2SK2529 220CFM 2SK2529 Hitachi DSA00116

    Hitachi DSA002781

    Abstract: No abstract text available
    Text: 2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM


    Original     		PDF 2SK2529 ADE-208-356F O-220CFM 200ica, D-85622 Hitachi DSA002781

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline 2SK2529 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK2529 ADE-208-356F Hitachi DSA00279

    2SK2529

    Abstract: 2SK2529-E PRSS0003AE-A
    Text: 2SK2529 Silicon N Channel MOS FET REJ03G1014-0800 Previous: ADE-208-356F Rev.8.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance RDS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2529 REJ03G1014-0800 ADE-208-356F) PRSS0003AE-A O-220C 2SK2529 2SK2529-E PRSS0003AE-A

    Hitachi DSA001652

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate


    Original     		PDF 2SK2586 D-85622 Hitachi DSA001652

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2586 Silicon N-Channel MOS FET ADE-208-358C Z 4th. Edition Aug. 1995 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline


    Original     		PDF 2SK2586 ADE-208-358C D-85622 Hitachi DSA00276

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    TO220CFM

    Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
    Text: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)


    Original     		PDF 2SK2927* O-220 2SK2928* 2SK2929* 2SK2930* 2SK2931* TO220CFM 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK2553 L , 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition January 1999 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK2553 ADE-208-357H 2SK2553 Hitachi DSA00279

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK2553 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 2 3 3 D


    Original     		PDF 2SK2553 D-85622 Hitachi DSA002749

    2SK2529

    Abstract: 2SK2553 2SK25 Hitachi DSA00116
    Text: 2SK2553 Silicon N Channel MOS FET Application LDPAK High speed power switching 4 Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece 2 1 1 1 4 2 3 2 3 1. Gate 2. Drain 3. Source


    Original     		PDF 2SK2553 2SK2529 2SK2553 2SK25 Hitachi DSA00116

    2SK25

    Abstract: 2SK2529 2SK2586 PE-50 Hitachi DSA00116
    Text: 2SK2586 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)


    Original     		PDF 2SK2586 2SK25 2SK2529 2SK2586 PE-50 Hitachi DSA00116

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK2529

    Abstract: 2SK2529-E PRSS0003AE-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    K2529

    Abstract: No abstract text available
    Text: 2SK2529 Silicon N-Channel MOS FET HITACHI ADE-208-356F 7th. Edition Application H ig h sp eed p o w e r sw itc h in g Features • L o w o n -re sista n c e • R d s «, = 7 m£2 typ. • H ig h sp e e d sw itc h in g • 4 V g ate d riv e d e v ic e can b e d riv e n fro m 5 V so u rce


    OCR Scan     		PDF ADE-208-356F O-220CFM 2SK2529 K2529

    2SK2529

    Abstract: Hitachi Scans-001
    Text: 2SK2529 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • • R ds „„ = 7 m il typ. High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO -220CFM


    OCR Scan     		PDF 2SK2529 D-85622 2SK2529 Hitachi Scans-001

    Untitled

    Abstract: No abstract text available
    Text: A D E - 2 0 8 - 3 5 6 F Z 2SK2529 Silicon N Channel MOS FET 7th. Edi ti on HITACHI Application High speed power switching Features • Low on-resistance R D S (o n ) = 7 m ß t y p . • High speed switching • 4 V gate drive device can be driven from 5 V source


    OCR Scan     		PDF 2SK2529 2SK2529 -220C

    Untitled

    Abstract: No abstract text available
    Text: 2SK2529 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed pow er switching Features • Low on-resistance • R ds „„ = 7 m il typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline 2SK2529 Absolute Maximum Ratings (Ta = 25 °C)


    OCR Scan     		PDF 2SK2529 D-85622