ECONOPACK
Abstract: FS100R12KE3 eupec FS50R12KE3 FS300R12KE3 FS75R12KE3 2902 FS450R12KE3 Econo FS225R12KE3
Text: MARKETING NEWS European PowerSemiconductor and Electronics Company New Pin-Out for SixPACKs in EconoPACK3 package for 1200V IGBT3 Modules As announced some weeks ago in the Marketing News 02/00 “Pin out for SixPACKs in EconoPACK2”, we would like to inform you today about the new Pin-Out for 1200V IGBT3
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D-59581
FS35R12KE3
FS50R12KE3
FS75R12KE3
FS100R12KE3
FS150R12KE3
FS150R12KE3G
FS225R12KE3
FS300R12KE3
FS450R12KE3
ECONOPACK
FS100R12KE3
eupec
FS50R12KE3
FS300R12KE3
FS75R12KE3
2902
FS450R12KE3
Econo
FS225R12KE3
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75GD120DN2
Abstract: SIGC121T120R2C
Text: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V
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SIGC121T120R2C
SIGC121T120R2C
75GD120DN2
Q67041sawn
A4682-A003
7171-M,
75GD120DN2
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a4661
Abstract: BSM100GD120DN2 SIGC156T120R2C
Text: Preliminary SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A
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SIGC156T120R2C
SIGC156T120R2C
BSM100GD120DN2
Q67041A4661-A003
7181-M,
a4661
BSM100GD120DN2
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2kw inverter
Abstract: ECONOPACK FS450R12KE3 Inverter design FS150R12KE3G FS300R12KE3 igbt inverter design eupec FS450R12KE3 eupec design ups inverter
Text: The standard platform for modular inverter design eupec 2000-06-06 page1 EconoPACK+ The standard platform for modular inverter design Agenda FKey Information FFrom the Module to the Inverter Family FElectrical Aspects FInternal Structure FThermal Design FSummary
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FS225R17KF6C
FS300R12KE3
FS300R17KF6C
FS450R12KE3
FS225R12KE3
FS150R17KF6C
FS150R12KE3G
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page13
page14
2kw inverter
ECONOPACK
FS450R12KE3
Inverter design
FS150R12KE3G
FS300R12KE3
igbt inverter design
eupec FS450R12KE3
eupec
design ups inverter
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FS50R12KE3
Abstract: FS75R12KE3 FS300R12KE3 FS100R12KE3 IGBT pinout FS150R12KE3G Econo ECONOPACK FS450R12KE3 FS150R12KE3
Text: MARKETING NEWS 02/00 European PowerSemiconductor and Electronics Company Max Planck Str. 5 D-59581 Warstein Germany 28.02.00 New Pin-Out for SixPACKs in EconoSTECK2 package for 1200V IGBT3 IGBT Modules Today we would like to inform you about the new Pin-Out for 1200V Econo SixPACK in the
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FS35R12KE3
FS50R12KE3
FS75R12KE3
FS100R12KE3
FS150R12KE3
FS225R12KE3
FS300R12KE3
FS450R12KE3
FS50R12KE3
FS75R12KE3
FS300R12KE3
FS100R12KE3
IGBT pinout
FS150R12KE3G
Econo
ECONOPACK
FS450R12KE3
FS150R12KE3
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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a4661
Abstract: BSM100GD120DN2 SIGC156T120R2C
Text: SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A
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SIGC156T120R2C
SIGC156T120R2C
BSM100GD120DN2
Q67041A4661-A003
7181-M,
a4661
BSM100GD120DN2
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Untitled
Abstract: No abstract text available
Text: SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V
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SIGC121T120R2C
SIGC121T120R2C
75GD120DN2
Q67041A4682-A003
7171-M,
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75GD120DN2
Abstract: SIGC121T120R2C
Text: SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V
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SIGC121T120R2C
SIGC121T120R2C
75GD120DN2
Q67041A4682-A003
7171-M,
75GD120DN2
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75GD120DN2
Abstract: SIGC121T120R2C
Text: Preliminary SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC121T120R2C 1200V
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SIGC121T120R2C
SIGC121T120R2C
75GD120DN2
Q67041A4682-A003
7171-M,
75GD120DN2
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heatsink catalogue
Abstract: FS450R12KE3 3rd Generation of 1200V IGBT Modules FS300R12KE3 Econo PIM The internal structure module IGBT FS300R12KE3 FS150R12KE3G half bridge converter 2kw High Voltage Busbar inverter techniques
Text: EconoPACK+ A new IGBT module for optimized inverter solutions M. Münzer, M.Hornkamp eupec GmbH & Co.KG, Warstein 08.2000 So called EconoPACK and EconoPIM modules with solderable pin terminals have changed the structure of inverters in application up to 20kW. Above 100 kW IHM modules have set a new
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a4661
Abstract: An 7181
Text: Preliminary SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A
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SIGC156T120R2C
BSM100GD120DN2
SIGC156T120R2C
Q67041sawn
A4661-A003
7181-M,
a4661
An 7181
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a4661
Abstract: soft solder die bonding BSM100GD120DN2 igbt "sawn on foil" SIGC156T120R2C
Text: SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A
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SIGC156T120R2C
SIGC156T120R2C
BSM100GD120DN2
Q67041A4661-A003
7181-M,
a4661
soft solder die bonding
BSM100GD120DN2
igbt "sawn on foil"
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bsm 25 gd 1200 n2
Abstract: bsm 75 gd 120 n2 siemens mosfet BSM 50 siemens igbt bsm 50 gd 120 n2 Thyristor Tabelle BSM15GD BSM15GD120DN 250068 BSM15GD120DN2
Text: Technische Angaben Technical Information 1 Übersicht IGBT-Module 1 Overview IGBT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V, 1200 V und 1700 V und im Strombereich
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BT diode
Abstract: ECONOPACK mounting instructions bsm 25 gd 1200 n2 bsm 75 gd 120 n2 bsm 50 gd 120 n2 calculation of IGBT snubber siemens igbt BSM 200 GA 120 BSM15GD120DN2 diode bym 26 siemens igbt BSM 100
Text: Technische Angaben Technical Information SIEMENS 1 Übersicht IGBT-Module 1 O verview IG BT Modules Hochsperrende spannungsgesteuerte Bipolar-Module Insulated Gate Bipolar Transistor modules Produktpalette Product Range IGBT-Module mit den Spannungen 600 V,
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