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    Festo MSSD-EB-S-M14

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    DigiKey MSSD-EB-S-M14 Bulk 1
    • 1 $12.7
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    Festo NEBS-M12G5-ES-5-LE5

    CONNECTING CABLE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NEBS-M12G5-ES-5-LE5 Bulk 1
    • 1 $66.21
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    Festo NEBS-M12G5-ES-10-LE5

    CONNECTING CABLE
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    DigiKey NEBS-M12G5-ES-10-LE5 Bulk 1
    • 1 $96.59
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    Festo NEBS-M12G5-ES-15-LE5

    CONNECTING CABLE
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    DigiKey NEBS-M12G5-ES-15-LE5 Bulk 1
    • 1 $126.91
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    Festo NEBS-M12G12-KS-5-LE12

    CONNECTING CABLE
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    DigiKey NEBS-M12G12-KS-5-LE12 Bulk 1
    • 1 $107.1
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    EBSM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marvell 88w8787

    Abstract: 88w8787 WYSBCVGXA wysbmvgxb WYSBMVGX8 EYSMAC UART bluetooth marvell WLAN 88W87 GYSFFMAXX
    Text: Wireless Module Technology Module Part Number WiFi: Marvell 88W8787 Interface Bluetooth FM Radio Crystal Antenna on Board Board Certifications RF Eval Daughter Board Dimensions Wireless Interface Board Module Part Number GYSFFMAXX Eval Board GKSFFMAXX Module Part Number


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    88W8787 11b/g/n 11a/b/g/n 11abgn 11bgn marvell 88w8787 WYSBCVGXA wysbmvgxb WYSBMVGX8 EYSMAC UART bluetooth marvell WLAN 88W87 GYSFFMAXX PDF

    2450DP15K5400

    Abstract: No abstract text available
    Text: "High Frequency Ceramic Solutions" 2.45 / 5.4GHz Ceramic Chip Diplexer LPF/BPF type P/N 2450DP15K5400 Detail Specification: 12/15/2011 Page 1 of 2 General Specifications 2450DP15K5400 Part Number Return Isolation Loss (dB) (dB) Passband (MHz) Insertion Loss (dB)


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    2450DP15K5400 18typ. 95GHz 2450DP15K5400 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC MJD29/29C 42E D B 7=^4142 000=100=1 fi EBSMGK NPN EPiTAXSAL SILICON TRANSÌSTOR GENERAL PURPOSE AMPLIFIER, LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • Lead Formed for Surface Mount Applications No Suffix


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    MJD29/29C TIP29 TIP29C 200mA PDF

    Untitled

    Abstract: No abstract text available
    Text: SbE D DATATRONICS • Ebsmas □□□□sis o ■ SER IES SM6760 SURFACE M O U NTED DIGITAL DELAY M O D U LES • 14 Pin SO IC Package • Designed For Surface Mounting • T T L and D T L Compatible • 5 Equally Spaced Taps Specifications • • • •


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    SM6760 25VDC 50juA 20/Tap 10/Tap 240mW 100PPM/Â PDF

    Untitled

    Abstract: No abstract text available
    Text: DATATRONICS 2bE D m EbSm ôS DD00EÔ5 5 SERIES 624 5-TAPS 16 PIN H-CMOS DIGITAL DELAY MODULES • 16 Pin D IL Package «H-Cmos Logic « 5 Equally Spaced Taps Specifications: • • • • • • • • • • • 4.75 to 5.25V D C 3,2v ' 0.9v 4.5v 0.1 v


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    D000E65 25VDC DL624-4A) PDF

    Untitled

    Abstract: No abstract text available
    Text: DATATRONICS EbE D • Ebsmas oooosn 3 T q-^-13 ■ - SERIES DL6200 DIGITAL DELAY MODULES • 16 Pin Package • TTLand DTL Compatible • 5 Equally Spaced Taps Specifications • • • • • • • • • • Supply Voltage Logic 1 Input Current Logic 0 Input Current


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    DL6200 25VDC 20/Tap 10/Tap 240mW 100PPM/PC PDF

    Untitled

    Abstract: No abstract text available
    Text: T 2bE D DATATRONICS Ebsmas o o d o e t m b • T :- ' 4 n - l 3 S E R I E S 6 3 3 8 PIN D U A L H -CM O S D I G I T A L D E L A Y M O D U L E S t • • 8 Pin DIP Auto-insertable • Two Independent Equal Delay Units Per Package H-Cmos Logic Specifications:


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    25VDC 20/aA 633-XXX PDF

    4.7 MF 50v CAPACITOR

    Abstract: capacitor 0.47 j 100 sw 0.1 MF RADIAL CAPACITOR EBSM
    Text: ALUM INUM ELECTROLYTIC CAPACITORS INDEX Series Nam e Special purpose Low C apacitance 6.3 ~ 450V 0.1 - 10,000 mF O perating T em perature - 40 ~ + 1 5°C Page C E D SM 85°C, Very sm all general use (S m aller than SEM ) 6.3 - 50V 33 ~ 15,000 mF - 40 - + 85°C


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    CE04U 4.7 MF 50v CAPACITOR capacitor 0.47 j 100 sw 0.1 MF RADIAL CAPACITOR EBSM PDF

    samsung pram

    Abstract: No abstract text available
    Text: SAMSUNG ELE CTRONICS INC 4EE D • 7 ^ 4 1 4 2 OQlGlññ b » S H Û K KM41C4002 CMOS DRAM 4 M X I Bit CMOS Dynamic RAM with Static Column M od e'" FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.


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    KM41C4002 150ns 100ns 180ns GD10203 T-46-23-15 20-LEAD samsung pram PDF

    samsung pram

    Abstract: t03h 256KX4 KM44C256BL KM44C256BL-10 Scans-0014168 T462
    Text: SA M S U N G E L E C T R O N I C S 42E INC D B TTbMm a 00100=13 KM44C256BL T B 1 S I1 6 K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page .Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44G256BL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its de­


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    KM44C256BL HSF16K 256KX4 KM44C256BL- 130ns 150ns KM44C256BL-10 100ns 180ns samsung pram t03h KM44C256BL Scans-0014168 T462 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • ¡ l É U iU ls l ■ 3.3V and 5V power supply options ■ 1.12GHz maximum VCO frequency ■ 30 to 560MHz reference input operating frequency ■ External 2.0GHz VCO capability ■ Low jitter differential design ■ Frequency doubler mode ■ PECL Differential output


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    12GHz 560MHz 20-pin SY89421V 2000MHz SY89421V 9421V Z20-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA337 OPA2337 OPA338 OPA2338 B U R R -B R O W N For most current data sheet and other product information, visit www.burr-brown.com M/croSIZE, Single-Supply CMOS OPERATIONAL AMPLIFIERS MicroAmplifier" Series FEATURES DESCRIPTION • McroSIZE PACKAGES: SOT-23-5


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    OPA337 OPA2337 OPA338 OPA2338 OT-23-5 OT-23-8 OPA337: OPA338: 120dB 525jiA/amp PDF

    E472M

    Abstract: CEBSM1V470M CEBSM CEBSM1A221M CEBSM1V331M CEBSM1V100M CEBSM1H471M CEBSM1 CEBSM2D470M CEBSM2A470M
    Text: UNITED CHEMI-CON S U B S I D I A R I E S OF N I P P O N ALUMINUM ELECTROLYTIC CAPACITORS EBSM SERIES C H E M I - C O N . I NC EBSM SERIES MINIATURE RADIAL TYPE FOR + 105° C • FEATURES 1. Miniaturized, 1 — 2 rank smaller than USM series. 2. Suitable for miniaturizing electronic equipment.


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    250VDC 250WV 470mF E472M CEBSM1V470M CEBSM CEBSM1A221M CEBSM1V331M CEBSM1V100M CEBSM1H471M CEBSM1 CEBSM2D470M CEBSM2A470M PDF

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC 42E ]> H KM23C4100H 7^4142 OGlllMT 1 CMOS MASK ROM 4M-Bit 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 100ns (max.)


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    KM23C4100H 8/256K 100ns 40-pln 44-pin KM23C4100H GG111S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 6 REV. ZONE 5 I 7 LTR B I DATE DESCRIPTION A mmmmm Ll/Si/00 REVISER APPD P fe rry ORDERING INFORMATION B AT 1 Q* J L (2 ) (3 ) - _Q_ _Q (5 ) (6 ) (4 ) Q_ _ 0 _ — J ± _ (7 ) (8 ) (9 ) 1. SERIES NUMBER : 8AT : HIGH DENSITY 1.27(.D50") SPACING MINI CONNECTOR STRAIGHT P.C.B. TYPE


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    Ll/Si/00 50/ttâ RS10ATB1 PDF

    Fk capacitor philips

    Abstract: No abstract text available
    Text: Philips Semiconductors Product SDecificatlon PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other


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    BUK109-50DL Fk capacitor philips PDF