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    MSi GE76111056

    GE76 Raider 11UE 1056
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    NAC GE76111056 1
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    Rakon Limited E7611LF

    OSCILLATOR TCXO/VCTCXO
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    Richardson RFPD E7611LF 1
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    E7611 Datasheets Context Search

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    817 CN

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET E76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz


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    NE76118 E76118 NE76118-T1 NE76118-T2er IR30-00-2 817 CN PDF

    HHM2101

    Abstract: HHM2106 E7611 hhm21
    Text: 1/2 001-01 / 20020221 / e7611_hhm21.fm RF Components HHM-21 Series Directional Couplers For Cellular Phone SPECIFICATIONS FEATURES • Ultra-compact. • Low insertion loss, high isolation. • Shielded type. Temperature range Operating Storage Maximum handling power


    Original
    hhm21 HHM-21 HHM2101 1785MHz] 3570MHz] 5355MHz] HHM2106 HHM2101 HHM2106 E7611 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1/2 001-01 / 20020221 / e7611_hhm22.fm RF Components HHM-22 Series Directional Couplers Shielded FEATURES • Smallest-in-the-industry-class compact, thin, and lightweight chip coupler manufactured in ceramic sheet multilayering process (L1.6xW0.8×T0.6mm/3mg).


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    hhm22 HHM-22 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1/2 001-01 / 20020221 / e7611_hhm23.fm RF Components HHM-23 Series Directional Couplers(For Dual Band) Shielded FEATURES • Compact, thin, and lightweight chip coupler manufactured in ceramic sheet multilayering process (L2.0xW1.25×T0.95mm/ 8mg). • Low loss and high isolation characteristics achieved in spite of


    Original
    hhm23 HHM-23 dig1500 PDF

    Shielded Microstrip Line

    Abstract: No abstract text available
    Text: 1/4 001-01 / 20020221 / e7611_hhm24.fm RF Components HHM-24, 26 Series Directional Couplers Shielded FEATURES • Compact, thin, and lightweight chip coupler manufactured in ceramic sheet multilayering process (L2.0xW1.25×T0.95mm/ 8mg). • According with customers' circuits, wide characteristics are


    Original
    hhm24 HHM26 HHM-24, Shielded Microstrip Line PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER _ New Plastic Package FEATURES E76118 NOISE FIGURE & A SSO C IA T ED GAIN vs. FREQUENCY LOW CO ST MINIATURE PLASTIC PACKAGE (SOT-343) CD LOW NOISE FIGURE: < CD 0.8 dB typical at 2 GHz m •o HIGH A SSO CIA TED GAIN:


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    OT-343) NE76118 E76118 NE76118-TI PDF