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    E72 TRANSISTOR Search Results

    E72 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    E72 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text:     QFET                                               !  


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    PDF FQB7P20TM O-263

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    Abstract: No abstract text available
    Text:     QFET                                               !  


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    PDF FQI7P20TU O-262 FQI7P20

    Untitled

    Abstract: No abstract text available
    Text: IXD2110/IXD2111 Step-Up DC/DC Converter / Controller step-up operation by using only an inductor, a capacitor, and a diode connected externally. The IXD2110/111B, D, and F versions can be used with an external transistor for applications requiring larger currents.


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    PDF IXD2110/IXD2111 IXD2110/111B, IXD2110/111 IXD2111 IXD211x IXD2110

    Untitled

    Abstract: No abstract text available
    Text: IXD2110/IXD2111 Step-Up DC/DC Converter / Controller step-up operation by using only an inductor, a capacitor, and a diode connected externally. The IXD2110/111B, D, and F versions can be used with an external transistor for applications requiring larger currents.


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    PDF IXD2110/IXD2111 IXD2110/111B, IXD2110/111 IXD2111 IXD211x IXD2110

    E61 sot-23-5

    Abstract: marking E61 diode MARKING e6 SOT235 SOT 86 MARKING E4 Supplied As. 5-Pin SOT 23-5 e5 mosfet e72 XC9110A/C/E E7 Marking sot-23-5 XC9111A marking E72
    Text: XC9110/XC9111 Series ETR0406 004 PFM Controlled Step-Up DC/DC Converter / Controller ICs •GENERAL DESCRIPTION The XC9110/9111 series is a group of PFM controlled step-up DC/DC converter/controller ICs designed to generate low supply voltage by the combination of PFM control and CMOS structure. The series is ideal for applications where a longer battery life is


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    PDF XC9110/XC9111 ETR0406 XC9110/9111 XC9110A/C/E XC9111A/C/E XC9110/9111B, E61 sot-23-5 marking E61 diode MARKING e6 SOT235 SOT 86 MARKING E4 Supplied As. 5-Pin SOT 23-5 e5 mosfet e72 E7 Marking sot-23-5 XC9111A marking E72

    E72 transistor sot 23

    Abstract: XC9111A E61 sot-23-5 Supplied As. 5-Pin SOT 23-5 e5 MARKING e6 SOT235 marking E61 diode XP01SB04A2BR marking e61 SOT 86 MARKING E4 E72 transistor
    Text: ◆Maximum Duty Cycle 75% 56%/75% Variable ◆Operating Voltage Range ◆Output Voltage Range ◆Output Voltage Accuracy ◆Low Supply Current :XC9110 Series :XC9111 Series :0.9V ~ 10.0V :1.5V ~ 7.0V :±2.5% :2.0 A •APPLICATIONS ●Mobile phones ●Various palm top equipment


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    PDF XC9110 XC9111 XC9111A XC9111B XC9110/9111 E72 transistor sot 23 E61 sot-23-5 Supplied As. 5-Pin SOT 23-5 e5 MARKING e6 SOT235 marking E61 diode XP01SB04A2BR marking e61 SOT 86 MARKING E4 E72 transistor

    SOT89 e6

    Abstract: XC9111A E72 transistor sot 23 9111C E61 sot-23-5 MARKING e6 SOT235 sot-23-5 MARK e5 CR54 XC9110 XC9111
    Text: XC9110/XC9111 Series ETR0406 004 PFM Controlled Step-Up DC/DC Converter / Controller ICs •GENERAL DESCRIPTION The XC9110/9111 series is a group of PFM controlled step-up DC/DC converter/controller ICs designed to generate low supply voltage by the combination of PFM control and CMOS structure. The series is ideal for applications where a longer battery life is


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    PDF XC9110/XC9111 ETR0406 XC9110/9111 XC9110A/C/E XC9111A/C/E XC9110/9111B, SOT89 e6 XC9111A E72 transistor sot 23 9111C E61 sot-23-5 MARKING e6 SOT235 sot-23-5 MARK e5 CR54 XC9110 XC9111

    2SB772PT

    Abstract: 2SB772P TRANSISTOR b 772 p E72 transistor common collector PNP 772 pnp oc sc62
    Text: CHENMKO ENTERPRISE CO.,LTD 2SB772PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)


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    PDF 2SB772PT SC-62/SOT-89) SC-62/SOT-89 2SB772PT 2SB772P TRANSISTOR b 772 p E72 transistor common collector PNP 772 pnp oc sc62

    2SB772GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SB772GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)


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    PDF 2SB772GP SC-62/SOT-89) SC-62/SOT-89 2SB772GP

    CH772GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CH772GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A) * High speed switching time: tstg= 1.0uSec (typ.)


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    PDF CH772GP CH772GP

    Untitled

    Abstract: No abstract text available
    Text: March 8, 2005 V4 •APPLICATIONS ◆Maximum Duty Cycle 75% 56%/75% Variable ◆Operating Voltage Range ◆Output Voltage Range ◆Output Voltage Accuracy ◆Low Supply Current :XC9110 Series :XC9111 Series :0.9V ~ 10.0V :1.5V ~ 7.0V :±2.5% :2.0 A ●Cellular phones


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    PDF XC9110 XC9111 XC9110/9111 XC9110/9111 ud200508

    Untitled

    Abstract: No abstract text available
    Text: ◆Maximum Duty Cycle 75% 56%/75% Variable ◆Operating Voltage Range ◆Output Voltage Range ◆Output Voltage Accuracy ◆Low Supply Current •APPLICATIONS :XC9110 Series :XC9111 Series :0.9V ~ 10.0V :1.5V ~ 7.0V :±2.5% :2.0 A ●Cellular phones ●PDAs


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    PDF XC9110 XC9111 XC9110/9111 XC9110/9111

    Untitled

    Abstract: No abstract text available
    Text: ◆Maximum Duty Cycle 75% 56%/75% Variable ◆Operating Voltage Range ◆Output Voltage Range ◆Output Voltage Accuracy ◆Low Supply Current •APPLICATIONS :XC9110 Series :XC9111 Series :0.9V ~ 10.0V :1.5V ~ 7.0V :±2.5% :2.0 A ●Cellular phones ●PDAs


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    PDF XC9110 XC9111 XC9110/9111 XC9110/9111

    xbs104s14r

    Abstract: XC9111F501MR XC9111C SOT89 e6 TOREX MARKING RULE XP151A13A0MR XP151A12A2MR-G XC9111 XC9111A SOT 86 MARKING E4
    Text: XC9110/XC9111 Series ETR0406-006 PFM Controlled Step-Up DC/DC Converter / Controller ICs •GENERAL DESCRIPTION The XC9110/9111 series is a group of PFM controlled step-up DC/DC converter/controller ICs designed to generate low supply voltage by the combination of PFM control and CMOS structure. The series is ideal for applications where a longer battery life is


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    PDF XC9110/XC9111 ETR0406-006 XC9110/9111 XC9110A/C/E XC9111A/C/E XC9110/9111B, xbs104s14r XC9111F501MR XC9111C SOT89 e6 TOREX MARKING RULE XP151A13A0MR XP151A12A2MR-G XC9111 XC9111A SOT 86 MARKING E4

    Untitled

    Abstract: No abstract text available
    Text: ◆Maximum Duty Cycle 75% 56%/75% Variable ◆Operating Voltage Range ◆Output Voltage Range ◆Output Voltage Accuracy ◆Low Supply Current •APPLICATIONS :XC9110 Series :XC9111 Series :0.9V ~ 10.0V :1.5V ~ 7.0V :±2.5% :2.0 A ●Cellular phones ●PDAs


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    PDF XC9110 XC9111 XC9110/9111 XC9111E331 XB01SB04A2BR

    XC9111C

    Abstract: XC9111F XC9111F331MR SOT 86 MARKING E4 MARKING e6 SOT235 E61 sot-23-5 marking E72 n-channel XC9111F501MR
    Text: XC9110/9111 Series PFM Controlled Step-Up DC/DC Converter / Controller ICs July 5, 2004 V3 " Maximum Duty Cycle 75% 56%/75% Variable " Operating Input Voltage Range " Output Voltage Range " Output Voltage Accuracy " Low Supply Current XC9110 Series XC9111 Series


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    PDF XC9110/9111 XC9110 XC9111 50mV/div 25mA/div XC9111C XC9111F XC9111F331MR SOT 86 MARKING E4 MARKING e6 SOT235 E61 sot-23-5 marking E72 n-channel XC9111F501MR

    Untitled

    Abstract: No abstract text available
    Text: OM-PQR1010 Power Line and Environmental Monitor ߜ Measures All Types of Disturbances Including Spikes, Sags, Surges, Common Mode Noise, High Frequency Noise, Dropouts, Power Failures ߜ Datalogging - Stores Average Reading Every Minute for up to 11 Days on Each Channel


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    PDF OM-PQR1010 OM-PQR1010 rM-PQR1010 RS-232 95/98/NT

    D-77761

    Abstract: No abstract text available
    Text: Füllstand- und Druckmeßtechnik Betriebsanleitung VEGASWING 71 A und 75 A Inhaltsverzeichnis Inhaltsverzeichnis Sicherheitshinweise . 2 1 Produktbeschreibung 1.1 Funktion und Aufbau . 3


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    PDF D-77761

    Untitled

    Abstract: No abstract text available
    Text: 123456778 BLDC Motor Controller 9ABCDEAF8 MelexCM DUAL RISC CPU o o o MLX4 communication CPU o LIN transceiver, supporting of LIN 2.0, LIN protocol software provided by Melexis o Software update for J2602 or GM-LAN possible o Wake up by LIN traffic or local sources


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    PDF J2602 MLX16 16bit 30kbyte 22kbytes 128bytes ISO14001 MLX81200 June/2012

    transistor 123 DL

    Abstract: F6-15R10K
    Text: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor Itansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module


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    PDF F6-15R10K 34d32ci7 transistor 123 DL F6-15R10K

    APT55GF60BN

    Abstract: No abstract text available
    Text: A D V A NC ED POWER TECHNOLOGY b lE 0 2 5 7 ^ 0 ^ o o G o a a a sb3 D I AV P A dvanced R o w er Te c h n o l o g y APT55GF60BN 600V 55A POWER MOS IV IGBT N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS


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    PDF APT55GF60BN 15ent

    T-39-ZI

    Abstract: 1BW TRANSISTOR transistor 1BW
    Text: T S ^ - 'S I F 400 R12 KL SEE EUPEC Elektrische Eigenschaften Electrical properties Hochstzulässige Werte Maximum rated values 1200 V 400 A V ces QOQOEbM Thermische Eigenschaften Transistor Transistor 3 MG3 S T 7 ]> MDI « U P E C Thermal properties R,hjc


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    PDF -T-39--ZI 34D32CI7 T-39-ZI 1BW TRANSISTOR transistor 1BW

    1BW TRANSISTOR

    Abstract: No abstract text available
    Text: FF 25 R 06 KF SEE T> EUPEC Thermische Eigenschaften Transistor Transistor 34D32T7 OOQGlflb n i H U P E C Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 25 A RfhCK lc Thermal properties DC, pro Baustein/per module DC, pro Zweig /p e r arm


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    PDF 34D32T7 34D32CI7 1BW TRANSISTOR

    CM300DY-24E

    Abstract: L120A BP107 fjl diode AL6345-25.0.391-00
    Text: b4E D • poüierex 7E T4b 21 0G0b7Sb Obb « P R X inc Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 CM300DY-24E DU3l IG B TMOD


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    PDF 7ET4b21 CM300DY-24E BP107, Amperes/1200 CM300DY-24 E-7-1800 CM300DY-24E L120A BP107 fjl diode AL6345-25.0.391-00