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    E4 SOT223 Search Results

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    CBVK741B019

    Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16
    Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF MMPQ2907 SOIC-16 CBVK741B019 F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF MMPQ2907 SOIC-16

    MMPQ2907

    Abstract: SOIC-16
    Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF MMPQ2907 SOIC-16 MMPQ2907 SOIC-16

    SM-8 Package

    Abstract: e4 sot223 NPN/PNP transistor sot223 ZHB6718 ZHB6718 TYPICAL APPLICATION ZHB6790 ZHB6792
    Text: H-Bridge devices in SM-8 Package 4 3 6 B2 2 B4 B1 E2,E3 1 C3,C4 7 E1,E4 8 C1,C2 5 The SM-8, is an 8 lead version of the industry standard SOT223 package. The package and leads occupy an area of 6.7 x 7.3mm and with a maximum height of 1.7mm it is ideal for space critical applications.


    Original     		PDF OT223 ZHB6792 ZHB6790 ZHB6718 SM-8 Package e4 sot223 NPN/PNP transistor sot223 ZHB6718 ZHB6718 TYPICAL APPLICATION ZHB6790 ZHB6792

    e4 sot223

    Abstract: No abstract text available
    Text: SOT-223 MECHANICAL DATA mm. mils DIM. MIN. TYP MAX. MIN. TYP. MAX. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1


    Original     		PDF OT-223 e4 sot223

    IC 7403

    Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


    Original     		PDF MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A

    2N3904 SOT-23

    Abstract: mark E4 SOT-23 MMBT3904 1A 2n3904 transistor 2N3904 equivalent 2n3904 data sheet 2N3904 die FAIRCHILD SOT-223 MARK h 2n3904 switch fairchild
    Text: 2N3904 MMBT3904 C E C B TO-92 SOT-23 E B Mark: 1A MMPQ3904 E1 PZT3904 B4 E4 B3 E3 B1 E1 B1 SOIC-16 C C4 C4 C3 C3 C2 C2 C1 E C B C1 SOT-223 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to


    Original     		PDF 2N3904 MMBT3904 OT-23 MMPQ3904 PZT3904 SOIC-16 OT-223 2N3904 MMBT3904 MMPQ3904 2N3904 SOT-23 mark E4 SOT-23 MMBT3904 1A 2n3904 transistor 2N3904 equivalent 2n3904 data sheet 2N3904 die FAIRCHILD SOT-223 MARK h 2n3904 switch fairchild

    Untitled

    Abstract: No abstract text available
    Text: STN2NF10 N-CHANNEL 100V - 0.23Ω - 2A SOT223 STripFET II POWER MOSFET TYPE STN2NF10 • VDSS RDS on ID 100 V < 0.26 Ω 2A TYPICAL RDS(on) = 0.23 Ω 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique ”Single Feature Size ”


    Original     		PDF OT223 STN2NF10 OT-223

    P008B DIODE

    Abstract: No abstract text available
    Text: STN3NF06L N-CHANNEL 60V - 0.07Ω - 3A SOT223 STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STN3NF06L 60 V < 0.1 Ω 3A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE


    Original     		PDF OT223 STN3NF06L OT-223 P008B DIODE

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6792


    Original     		PDF ZHB6792 OT223)

    SM-8 BIPOLAR TRANSISTOR

    Abstract: 4420 Transistor TP4030 ZHB6792 500mA H-bridge
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6792


    Original     		PDF ZHB6792 OT223) SM-8 BIPOLAR TRANSISTOR 4420 Transistor TP4030 ZHB6792 500mA H-bridge

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790


    Original     		PDF ZHB6790 OT223)

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718


    Original     		PDF ZHB6718 OT223)

    ZHB6718

    Abstract: 12 mje t 5029 npn transistor footprint NPN/PNP transistor sot223 partmarking 6 C ZHB6718 TYPICAL APPLICATION transistor bf 44 NPN SINGLE transistors ssot-6 E4
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718


    Original     		PDF ZHB6718 OT223) ZHB6718 12 mje t 5029 npn transistor footprint NPN/PNP transistor sot223 partmarking 6 C ZHB6718 TYPICAL APPLICATION transistor bf 44 NPN SINGLE transistors ssot-6 E4

    h6718

    Abstract: bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718


    Original     		PDF ZHB6718 OT223) h6718 bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR

    ZHB6790

    Abstract: diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790


    Original     		PDF ZHB6790 OT223) ZHB6790 diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual

    N3NE06

    Abstract: P008B SGS-Thomson e4 sot223 SGS-Thomson mosfet k 2638
    Text: STN3NE06 N - CHANNEL ENHANCEMENT MODE ”EXTREMELY HIGH DENSITY” POWER MOSFET TARGET DATA TYPE V DSS R DS on ID ST N3NE06 60 V < 0.13 Ω 3 A • ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED


    Original     		PDF STN3NE06 N3NE06 N3NE06 P008B SGS-Thomson e4 sot223 SGS-Thomson mosfet k 2638

    P008B

    Abstract: STN3NE06 SGS-Thomson mosfet
    Text: STN3NE06 N - CHANNEL ENHANCEMENT MODE "EXTREMELY HIGH DENSITY" POWER MOSFET TARGET DATA TYPE V DSS R DS on ID STN3NE06 60 V < 0.12 Ω 3A • ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION


    Original     		PDF STN3NE06 OT-223 P008B STN3NE06 SGS-Thomson mosfet

    ZDS1009

    Abstract: PCF 7900 bq2954 S1009 DV2954S1H FMMT451 FZT789A high side current mirror sensing
    Text: Application Note 32 Issue 1 January 2000 Features and Applications of the ZDS1009 Current Mirror/Level Translator Neil Chadderton Introduction The ZDS1009 current mirror has been developed specifically for high side, current sense plus level translation applications and as such will find a


    Original     		PDF ZDS1009 ZDS1009 D-81673 PCF 7900 bq2954 S1009 DV2954S1H FMMT451 FZT789A high side current mirror sensing

    STZTA42

    Abstract: STZTA92
    Text: STZTA92 MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER


    Original     		PDF STZTA92 STZTA42 OT-223 STZTA42 STZTA92

    STZTA42

    Abstract: STZTA92
    Text: STZTA92 MEDIUM POWER AMPLIFIER ADVANCE DATA • ■ ■ ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER


    Original     		PDF STZTA92 STZTA42 OT-223 STZTA42 STZTA92

    P008B

    Abstract: PNP Epitaxial Silicon Transistor sot223 STZTA42 STZTA92
    Text: STZTA42 MEDIUM POWER AMPLIFIER ADVANCE DATA • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER


    Original     		PDF STZTA42 STZTA92 OT-223 P008B PNP Epitaxial Silicon Transistor sot223 STZTA42 STZTA92

    zdt749

    Abstract: 6075A ZDT6790 ZDT1049 SM-8 BIPOLAR TRANSISTOR
    Text: Section 5: Bipolar Transistors S a tu r•ationTransistors up to Î 0 0 V o lts L o in Zetex has introduced the SM-8 surface mount package derived from the industry standard SOT223 outline. The SM-8 package features a unique lead fram e design which serves to increase the number of packaged com ponents,


    OCR Scan     		PDF OT223 ZDT717 ZDT749 ZDT6718 ZDT6790 6075A ZDT1049 SM-8 BIPOLAR TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIM INARY DATA SH EET ISS U E B JU LY 1997 FEATURES * Compact package * * * * Low on state losses Low drive requirem ents Operates up to 40V supply 2 A m p continuous rating ^ L J SM-8 8 LEAD SOT223 PARTMARKING DETAIL - ZHB6790


    OCR Scan     		PDF ZHB6790 OT223)