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    N3NE06 Search Results

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    N3NE06 Price and Stock

    STMicroelectronics STN3NE06

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    Bristol Electronics STN3NE06 1,000
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    Chip 1 Exchange STN3NE06 11,015
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    Others STN3NE06LSA

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    Chip 1 Exchange STN3NE06LSA 2,093
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    Others STN3NE06

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    Chip 1 Exchange STN3NE06 1,025
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    N3NE06 Datasheets Context Search

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    N3NE06L

    Abstract: N3NE n3ne06 STN3NE06L WO-260
    Text: N3NE06L  N - CHANNEL 60V - 0.10 Ω - 3A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE ST N3NE06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.120 Ω 3 A TYPICAL RDS(on) = 0.10 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STN3NE06L OT-223 N3NE06L N3NE06L N3NE n3ne06 STN3NE06L WO-260

    N3NE06

    Abstract: P008B SGS-Thomson e4 sot223 SGS-Thomson mosfet k 2638
    Text: N3NE06 N - CHANNEL ENHANCEMENT MODE ”EXTREMELY HIGH DENSITY” POWER MOSFET TARGET DATA TYPE V DSS R DS on ID ST N3NE06 60 V < 0.13 Ω 3 A • ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED


    Original     		PDF STN3NE06 N3NE06 N3NE06 P008B SGS-Thomson e4 sot223 SGS-Thomson mosfet k 2638

    N3NE06

    Abstract: P008B DIODE STN3NE06 c 1181
    Text: N3NE06  N - CHANNEL 60V - 0.08Ω - 3A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID ST N3NE06 60 V < 0.100 Ω 3 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		PDF STN3NE06 OT-223 N3NE06 N3NE06 P008B DIODE STN3NE06 c 1181