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    E3 MARKING Search Results

    E3 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    E3 MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SA2B-E3, SA2D-E3, SA2G-E3, SA2J-E3, SA2K-E3, SA2M-E3 www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Rectifier FEATURES • • • • • • • Low profile package Ideal for automated placement Glass passivated chip junction


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    J-STD-020, DO-214AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    DIODE B140

    Abstract: No abstract text available
    Text: B120-E3, B130-E3, B140-E3, B150-E3, B160-E3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency


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    B120-E3, B130-E3, B140-E3, B150-E3, B160-E3 J-STD-020, DO-214AC 2002/95/EC. 2002/95/EC DIODE B140 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3 www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES • Power pack • Glass passivated pallet chip junction • Ultrafast recovery time • Low switching losses, high efficiency


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    UG30APT-E3, UG30BPT-E3, UG30CPT-E3, UG30DPT-E3 O-247AD 22-B106 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    HDB3 matlab

    Abstract: block diagram prbs generator in matlab matlab pn sequence generator HP54502A
    Text: DART Device Advanced E3/DS3 Receiver/Transmitter TXC-02030 FEATURES DESCRIPTION • Single LIU for E3 and DS3 The Dual-market Advanced E3/DS3 Receiver/Transmitter DART device performs the receive and transmit line interface functions required for transmission of E3


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    TXC-02030 TXC-02030-MB HDB3 matlab block diagram prbs generator in matlab matlab pn sequence generator HP54502A PDF

    Untitled

    Abstract: No abstract text available
    Text: V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.455 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB


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    V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3 O-220AB ITO-220AB J-STD-020, O-263AB V30100C VF30100C PDF

    Untitled

    Abstract: No abstract text available
    Text: VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 2.5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB


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    VT1060C-E3, VFT1060C-E3 VBT1060C-E3, VIT1060C-E3 O-220AB ITO-220AB J-STD-020, O-263AB VT1060C VFT1060C PDF

    Untitled

    Abstract: No abstract text available
    Text: VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


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    VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3 ITO-220AB O-220AB J-STD-020, O-263AB VFT2080C VT2080C PDF

    Untitled

    Abstract: No abstract text available
    Text: VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 3 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


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    VT1080C-E3, VFT1080C-E3, VBT1080C-E3, VIT1080C-E3 O-220AB ITO-220AB J-STD-020, O-263AB VFT1080C VT1080C PDF

    Untitled

    Abstract: No abstract text available
    Text: VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A FEATURES TMBS TO-220AB ITO-220AB • Trench MOS Schottky technology • Low forward voltage drop, low power losses


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    VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 O-220AB ITO-220AB J-STD-020, O-263AB VT10200C 22-B106 PDF

    Untitled

    Abstract: No abstract text available
    Text: VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


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    VT3080C-E3, VFT3080C-E3, VBT3080C-E3, VIT3080C-E3 ITO-220AB O-220AB J-STD-020, O-263AB VFT3080C VT3080C PDF

    Untitled

    Abstract: No abstract text available
    Text: VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


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    VT3080S-E3, VFT3080S-E3, VBT3080S-E3, VIT3080S-E3 O-220AB ITO-220AB J-STD-020, O-263AB VFT3080S VT3080S PDF

    Untitled

    Abstract: No abstract text available
    Text: VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB ITO-220AB • Low forward voltage drop, low power losses


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    VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 O-220AB ITO-220AB J-STD-020, O-263AB VFT1080S VT1080S PDF

    Untitled

    Abstract: No abstract text available
    Text: VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


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    VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3 O-220AB ITO-220AB J-STD-020, O-263AB VFT2080S VT2080S PDF

    Untitled

    Abstract: No abstract text available
    Text: V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB ITO-220AB • Low forward voltage drop, low power losses


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    V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20150C 22-B106 PDF

    Untitled

    Abstract: No abstract text available
    Text: VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


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    VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 O-220AB ITO-220AB J-STD-020, O-263AB VT2060C VFT2060C PDF

    mll34 footprint

    Abstract: SOD80 footprint 1N4099UR DO-213AA 1N4099 1N4135UR 1N4614UR 1N4627UR MLL4099 MLL4135
    Text: 1N4099UR thru 1N4135UR, e3 or MLL4099 thru MLL4135, e3 and 1N4614UR thru 1N4627UR, e3 (or MLL4614 thru MLL4627, e3) SCOTTSDALE DIVISION GLASS SURFACE MOUNT 0.5 WATT ZENERS APPEARANCE The 1N4099UR thru 1N4135UR and 1N4614UR thru 1N4627UR series of 0.5 watt glass surface mount DO-213AA Zener voltage regulators provides


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    1N4099UR 1N4135UR, MLL4099 MLL4135, 1N4614UR 1N4627UR, MLL4614 MLL4627, 1N4135UR mll34 footprint SOD80 footprint DO-213AA 1N4099 1N4627UR MLL4135 PDF

    Untitled

    Abstract: No abstract text available
    Text: V20150S-E3, VF20150S-E3, VB20150S-E3, VI20150S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


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    V20150S-E3, VF20150S-E3, VB20150S-E3, VI20150S-E3 ITO-220AB O-220AB J-STD-020, O-263AB V20150S VF20150S PDF

    Untitled

    Abstract: No abstract text available
    Text: V30100SG-E3, VF30100SG-E3, VB30100SG-E3, VI30100SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


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    V30100SG-E3, VF30100SG-E3, VB30100SG-E3, VI30100SG-E3 O-220AB ITO-220AB J-STD-020, O-263AB V30100SG 22-B106 PDF

    Untitled

    Abstract: No abstract text available
    Text: V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


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    V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20100S 22-B106 PDF

    Untitled

    Abstract: No abstract text available
    Text: V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


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    V40100G-E3, VF40100G-E3, VB40100G-E3, VI40100G-E3 O-220AB ITO-220AB J-STD-020, O-263AB V40100G 22-B106 PDF

    Untitled

    Abstract: No abstract text available
    Text: V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


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    V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20120C VF20120C PDF

    Untitled

    Abstract: No abstract text available
    Text: V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


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    V30120S-E3, VF30120S-E3, VB30120S-E3, VI30120S-E3 ITO-220AB O-220AB J-STD-020, O-263AB V30120S VF30120S PDF

    Untitled

    Abstract: No abstract text available
    Text: V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


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    V20120S-E3, VF20120S-E3, VB20120S-E3, VI20120S-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20120S VF20120S PDF

    Untitled

    Abstract: No abstract text available
    Text: CX28342/3/4/6/8 Dual/Triple/Quad/Hex/Octal-Enhanced DS3/E3 Framer Distinguishing Features ! The CX28342/3/4/6/8 provides Dual, Triple, Quad, Hex, and Octal DS3/E3 framers designed to support DS3-M13, DS3-C-bit parity, E3-G.751, and E3-G.832 transmission formats.


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    CX28342/3/4/6/8 DS3-M13, CX28342/ 500064C PDF