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    ic pt 2389

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES E25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C rs s : 0.02 pF TYP HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz m T> LOW NF: 1.1 dB TYP AT 900 MHz


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    NE334S01

    Abstract: E7138 nec microwave NE76084 NE67383
    Text: NEC is a global force in the dozens of satellites around the world. j and engineering services are all geared to computer, communications and home CEL’s Space/Hi Rel Management Group | helping you get your designs off paper and electronics markets. The company’s products


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