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Catalog Datasheet	MFG & Type	Document Tags	PDF
511s Abstract: No abstract text available Text: Ratings and c h arac te ristic s of Fuji I G B T M B T 2 M B I T 5 J — 0 6 O Module (TENTATIVE) 1. Outline Drawing Unit : a* * Isolation Voltage : AC 2500 V 1 limite ìli .l i- 2 : ’ el1li 111 lìti 1\|S- 5* sÏ S i r M141* Ww Tab type terminals ¡Ê iïlll	OCR Scan	MT5F4905 D0DB713 trrd25t! -trr25t Irrl25 Irt25t; MT5F4905 511s	PDF
TS808C04 Abstract: ts808c WAAI Text: T S 808C 04 3 oa ' > 3 'y h + — V T ¥ 4 si'i'tjm-F K SCHOTTKY BARRIER DIODE l Features • "JS6 Surface m ount device. • te V F Low V f • m m m m Wy? F < 1=# t i & i . ' C on nection D iagram Super high speed sw itching. • 7 V -'-a w e « « utt	OCR Scan	TS808C04 500ns, 0D0b45fci 11-lili ts808c WAAI	PDF
Untitled Abstract: No abstract text available Text: I- 2 COLLMER SEIUCONÏUCTOR INC S K 1 5 1 2 4flE D • 52307=12 0D01fl22 C1S2 Scope This specifies Fuji power MOSFET 2 S K 1 5 1 2 2. Outline I Construction I! ) Application HI) Outview N-channel enhanceaent mode power MOSFET for switching	OCR Scan	0D01fl22 2SK1512 MK5C25623) MT5F17S7 223fl7ti2 250mm F1737 C0L-T-39-/4Tr 223fl7c MT5F179T	PDF
Untitled Abstract: No abstract text available Text: FU JI 2SK2638-01MR N-channel MOS-FET FAP-IIS Series 0,65ß 450V > Features 10A 50W > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Repetitive Avalanche Rated	OCR Scan	2SK2638-01MR	PDF
Untitled Abstract: No abstract text available Text: 2 2 3 a ? “Ì2 0004M01 27b -* - S P E C I F I C A T I O N 1G B T DEVICE NAME : TYPE NAME : SPEC. No. : MS 5 F 3 5 1 4 DATE : Jun.-25-1996 1M B H 1 5 D - 1 2 0 Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME	OCR Scan	0004M01	PDF