esja57
Abstract: ESJA57-04 ESJA54-06 ESJA54-08 ESJA57-03 ESJA58-06 ESJA58-08 DIODE 6kv HIGH VOLTAGE DIODE 6kv
Text: COLLMER SEMICON DUC TOR INC 34E D • 223fl7ci2 0001447 S * C O L High voltage silicon rectifier diodes 5mA avg., up to 8 kV ESJA57-D ESJA58-D ESJA54-D M a x im u m ratings Maximum ratings Type Thermal ratings Repetitive peak reverse voltage Average forward
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ESJA57-D
ESJA58-D
ESJA54-D
ESJA57-03
ESJA57-04
ESJA58-06
ESJA58-08
ESJA54-06
ESJA54-08
esja57
DIODE 6kv
HIGH VOLTAGE DIODE 6kv
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pj 899 diode
Abstract: pj 899 2sk mosfet DD01 it900
Text: 2 S K 1 5 1 2 MAE 1> • 52307=12 ÜDDlflES ISS C0LH1ER SEMICONDUCTOR INC Scope This specifies Fuji power MOSFET Outline I Construction Q ) Application IS ) Outview “ Ial*i£ > S 3 2 i«i "2O5 3 _j a 3 5 o 0: « ? “ &Ô “ a ORu is e t oi¿ £s § s S
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MK5C25623)
IC0LT-39
T0-228AA
SC-65
MK5C25624
pj 899 diode
pj 899
2sk mosfet
DD01
it900
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ERD31
Abstract: ERD31-02 ERD31-04
Text: COLLMER SEMICONDUCTOR INC 34E » • SSaaTTS DQÛ1S17 0 BiCOL “~Z. S ilico n rectifier d io d e s / F a s t re co v e ry . _ \CT 1. 5 A a v g . , up to 4 0 0 volts E R D 3 1 - D M axim um ratings Maxim um ratings Repetitive peak reverse voltage Type V rrm
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ERD31
T-03-15
ERD31-02
ERD31-04
100mA,
100mA)
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Untitled
Abstract: No abstract text available
Text: I- 2 COLLMER SEIUCONÏUCTOR INC S K 1 5 1 2 4flE D • 52307=12 0D01fl22 C1S2 Scope This specifies Fuji power MOSFET 2 S K 1 5 1 2 2. Outline I Construction I! ) Application HI) Outview N-channel enhanceaent mode power MOSFET for switching
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0D01fl22
2SK1512
MK5C25623)
MT5F17S7
223fl7ti2
250mm
F1737
C0L-T-39-/4Tr
223fl7c
MT5F179T
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Untitled
Abstract: No abstract text available
Text: _ _ _ _ 1-Pack IGBT 1M B I [IT L S Ê îr D S O Ë M IGBT MODULE N series I Outline Drawing • Features -10l±i— —93iU - Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FW D Characteristic • Minimized Internal Stray Inductance
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D-60528
702708-Dallas,
223fl7c
00045bb
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ERW11-120
Abstract: No abstract text available
Text: S P E C I F I C A T I DEVICE NAME : SILICON DIODE TTPE NAME : E R W 1 1- SPEC. No. :_ O N 12 0 DATE_ :_ _ F u j i This Specification DATE NAME E l e c t r i c is s u b j e c t APPROVED Co., Ltd. to c h a n g e wi thout notice.
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RW11-12
257-R-004a
T0-Z47
H04-004-03
ERW11-120
ERW11-120
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Untitled
Abstract: No abstract text available
Text: ERC81-004 3 a O u tlin e D ra w in g s SCHOTTKY BARRIER DIODE Features • H tf : M a rkin g Lo w V F • X -f A 5 —a —K : äi S u p e r h ig h speed s w itc h in g . C olor c o d e : S ilv e r us*« H ig h re lia b ility by p la n e r d e s ig n . ✓
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ERC81-004
ERC81
223fl7c
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ESJA52-14A
Abstract: sis 962
Text: Soec. DATE NAME CHECKED DWG.N0. Thl» m alefici and the Inlorm tllon Itartln I» 1h* p rop o rti o{ Fuji decirle C o .,1.14. They *h«N b« neither rftp'oducnd, copied, U n i, or d le d o ie d In any wiy w hutioever fur Ihe vit» al *r>y third purtjf nor m<d lor il9 ffl#niií«elurlng purpoio
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ESJA52-14A
D00b22b
H04-004-07
0DDti22'
000LE30
ESJA52-OQA
00DbS32
ESJA52-14A
sis 962
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ESJA52-10
Abstract: ESJC07-12B ESJA53-16 ESJA82-10 ESJA82-12 ESJA82-14 ESJA83-16 ESJA83-18 ESJA83-20 ESJA83-24
Text: <§ HIGH VOLTAGE DIODES V P art N u m b e r rrm KV lo VF trr <mA) (V) (u see) Pkg. L (In.) P k g . D ia . W ir e D ia . (In.) (In.) Resin Package, 60 Nanos econd Recoven E S J A 9 S -0 8 6 8 23.4 .06 .256 .098 .020 E S J A 9 2 -1 2 8 36.0 .06 .394 .118 .024
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ESJA98-08
ESJA92-12
ESJA88-06
ESJA88-08
ESJA82-10
ESJA82-12
ESJA82-14
ESJA83-16
ESJA83-18
ESJA83-20
ESJA52-10
ESJC07-12B
ESJA53-16
ESJA83-24
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MB12-140
Abstract: dm445 1009C
Text: FUJI 1GBT S P E C I F I C A T I O N TYPE NAME : ¿MB12-140 1. Absolute maximum ratings Tc=25‘C Items Symbols maximum ratings Unit VcE 1400 V Gate-Eraitter Voltag e V ge V Continuos 1c 12 A Pulse-50/fS I CP 60 A Power Dissipation +1 C ollector Current
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MB12-140
Pulse-50/fS
DM445
MB12-140
1009C
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Untitled
Abstract: No abstract text available
Text: Ratings and c h a r a c te r is t ic s of Fuji I G B T M B T 2 M 13 I 2 0 0 J T 1. — 0 6 0 Module (TENTATIVE) Outline Drawing Unit : as * Isolatio n Voltage : AC 2500 V 1 ainute 3-M5 / Xo f= 0*“ er + 1 ro O CO Tab type t erm in a ls equivalent)
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0D0244S
F4907
223fl7c
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20KV DIODE
Abstract: HIGH VOLTAGE DIODE 20kv ESJA53-20A
Text: SPECIFICATION D e v ic e Maine_ : High V o lta g e Si I icon Diode Type Name_ ; ESJA53 Spec. 20A No. i ! i Fuji E lectric C o.,Ltd. Matsumoto Factory NAME DATE DRAWN ! CHECKED Ì ' APPROVED Fuji Electric Co^Ltd. 1 1 1 § o ^ •■ r WM S33ä7^E GGDb234 735 B
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ESJA53
Db234
H04-004-03
0G0b23b
DDb23Ã
Q0Db23T
ESJA53-CÃ
0DDL240
20KV DIODE
HIGH VOLTAGE DIODE 20kv
ESJA53-20A
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