B78108-S1153-K
Abstract: V23809-E11-C10
Text: V23809-E11-C10 Single Mode 1300 nm ESCON 1x9 Transceiver Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) (7.42—0.15) .292—.006 Optical Centerline (2) .080 (1.5±0.1) .06±.004 (0.73±0.1) .028±.004 (4±0.2) .158±.008
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V23809-E11-C10
D-13623,
B78108-S1153-K
V23809-E11-C10
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B78108-S1153-K
Abstract: V23809-E11-C10
Text: V23809-E11-C10 Single Mode 1300 nm ESCON 1x9 Transceiver Preliminary Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) (7.42–0.15) .292–.006 Optical Centerline (2) .080 (1.5±0.1) .06±.004 (0.73±0.1) .028±.004
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V23809-E11-C10
D-13623,
de/Semiconductor/products/37/376
B78108-S1153-K
V23809-E11-C10
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C200
Abstract: BZV58
Text: BZV58 C10.BZV58 C200 5W 3 ; + 9 : Absolute Maximum Ratings Symbol Conditions Axial lead diode : 9 3= ; + + 2 &% > ' 8 : 9 ? 1 2 @ = A 4 + BC2 @ 3
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BZV58
C200
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D9K DIODE
Abstract: diode JD e6e1 DIODE K9 JD ELECTRONICS k9 diode DIODE 19 9
Text: BZV58 C10.BZV58 C200 5W power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter 3 ; + 9 : Absolute Maximum Ratings Symbol Conditions Axial lead diode : 9 3= ; +
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BZV58
D9K DIODE
diode JD
e6e1
DIODE K9
JD ELECTRONICS
k9 diode
DIODE 19 9
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Untitled
Abstract: No abstract text available
Text: BZV58 C10.BZV58 C200 5W 3 ; + 9 : Absolute Maximum Ratings Symbol Conditions Axial lead diode : 9 3= ; + + 2 &% > ' 8 : 9 ? 1 2 @ = A 4 + BC2 @ 3
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BZV58
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TSC5304EDCP
Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304EDCP
TSC5304EDCH
O-252
75pcs
marking E11 DIODE
power transistor Ic 4A NPN to - 251
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H 48 zener diode
Abstract: zener diode 12v 0.5 w 5,6v 1,3w zener diode marking E11 DIODE ZENER DIODE marking l2 BZX85C3V3-BZX85C56 zener diode BZX85C15 DO41 package BZX85C5V1 BZX85C7V5 zener 1.3W
Text: BZX85C3V3-BZX85C56 1.3W,5% Tolerance Zener Diode Small Signal Diode DO-41 Axial Lead HERMETICALLY SEALED GLASS D Features Wide zener voltage range selection:3.3V to 56V C A Vz Tolerance Selection of ±5% Designed for through-Hole Device Type Mounting
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BZX85C3V3-BZX85C56
DO-41
MIL-STD-202
27-Sep-11
H 48 zener diode
zener diode 12v 0.5 w
5,6v 1,3w zener diode
marking E11 DIODE
ZENER DIODE marking l2
BZX85C3V3-BZX85C56
zener diode BZX85C15 DO41 package
BZX85C5V1
BZX85C7V5
zener 1.3W
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marking E11 DIODE
Abstract: No abstract text available
Text: BZX85C3V3-BZX85C56 1.3W,5% Tolerance Zener Diode Small Signal Diode DO-41 Axial Lead HERMETICALLY SEALED GLASS D Features C Wide zener voltage range selection:3.3V to 56V A Vz Tolerance Selection of ±5% Designed for through-Hole Device Type Mounting
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BZX85C3V3-BZX85C56
DO-41
C/10s
27-Sep-11
marking E11 DIODE
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PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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E13 diode
Abstract: SPA548-01
Text: SPA548-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 5.5 kV / 2A Designer’s Data Sheet FEATURES: • • •
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SPA548-01
100kHz
160-1512-XX-05
E13 diode
SPA548-01
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Untitled
Abstract: No abstract text available
Text: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES: • •
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SPA547-01
100kHz
160-1512-XX-05
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diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS
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marking E13 diode
Abstract: marking E10 DIODE SPA548-01 E5 marking
Text: SPA548-01 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 5.5 kV / 2A Designer’s Data Sheet FEATURES: • • •
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SPA548-01
100kHz
160-1512-XX-05
PM0022B
marking E13 diode
marking E10 DIODE
SPA548-01
E5 marking
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marking E10 DIODE
Abstract: DIODE MARKING 9X SPA547-01 helicoil unf marking E11 DIODE diode marking e8
Text: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HYPERFAST HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES:
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SPA547-01
100kHz
160-1512-XX-05
PM0021D
marking E10 DIODE
DIODE MARKING 9X
SPA547-01
helicoil unf
marking E11 DIODE
diode marking e8
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SKR141F15
Abstract: 60F15 skt 100-9 skt553 skt 450 skt 2500 diode skn 71 metal rectifier diode skr 130 SKN2016 SKN141F15
Text: 1998-2012:QuarkCatalogTempNew 9/20/12 3:56 PM Page 1998 Hermetically Sealed Diodes and Thyristors Hermetically Sealed Diode 10 Amp to 6000 Amp — Highest Industrial Standard RoHS SKN 20/16 SKR 26/16 INTERCONNECT TEST & MEASUREMENT 25 SKR 45/16 SKN 71/16 SKN 130/16
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O-220AC
SKR141F15
60F15
skt 100-9
skt553
skt 450
skt 2500
diode skn 71
metal rectifier diode skr 130
SKN2016
SKN141F15
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Untitled
Abstract: No abstract text available
Text: 5bE D 3030^ GQG12DS 41b » V C T G aA s Infrared Emitting Diodes VT E11 1 3 , 16, 18 TO-46 Lensed Package — 940 nm E G & G VACTEC PACKAGE D IM EN SIO N S inch mm •206 ( S .2 3 ) 1 .0 0 ( 2 5 .4 ) CASE 24 TO-46 HERMETIC (LENSED) CHIP SIZE:.018-x.018-
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GQG12DS
018-x
VTE1113
VTE1116
VTE1118
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Untitled
Abstract: No abstract text available
Text: V23809-E11-C10 SIEMENS Single Mode 1300 nm ESCON 1x9Transceiver Prelim inary D im ensions in m m inches (11.5 max) .453 m ax. V ie w Z (Lead cro ss se ction and s ta n d o ff size) (7.42-0.15) .292-,006 Optical (2) .080 • ■ (4±0.2) ,158±.008 (a>
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V23809-E11-C10
4y2032l
D-13623,
de/Semiconductor/products/37/376
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MDA2501
Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Text: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090
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1N5817
1N5618
1N5818
1N5819
1N5820
1N5821
MDA2501
pbl302
g1756
g1756 Diode
MDA2502
MDA970A6
MDA3510
MDA2500
MDA3502 Bridge rectifier
mda970a1
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Untitled
Abstract: No abstract text available
Text: EHAlpha Silicon Beamless Schottky Diodes P/N DME, DMF, DMJ Series Features • For Microwave M IC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ W ide Product Range Series Pair, Ring, Bridge
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025nn)
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S3995
Abstract: SMS3992-00 SMS3994 S3996 SMS1528-00 SMS3991-10 Alpha Industries pin diodes SMS3990 SMS3991-50 MARKING S15
Text: Schottky Mixer and Detector Diodes in EOAlpha Surface Mount Plastic Packages SMS Sériés Features < Æ ° -Æ ^ - For High Volume Commercial Applications Small Surface Mount Packages S0D 323 S O T 23 S 0 T 143 Low Conversion Loss • Tight Parameter Distribution
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Untitled
Abstract: No abstract text available
Text: EBAIpha Silicon Beamless Schottky Diodes P/N DME, DMF, DMJ Series Features • For Microwave MIC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ Wide Product Range Series Pair, Ring, Bridge
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025mm)
025Hn>
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Untitled
Abstract: No abstract text available
Text: E3Alpha Silicon Beamless Schottky Diodes P/N DME, DMF, DMJ Series Features • For Microwave MIC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ Wide Product Range Series Pair, Ring, Bridge,
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AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
AK006M1-01
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scw75
Abstract: No abstract text available
Text: Silicon Beamless Schottky Diodes S3A lpha Features • For Microwave M IC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ W ide Product Range: Series Pair, Ring, Bridge,
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DME3927-000
Abstract: DME3930-000 DME3943-000 DMF3926 DMF3929 DMJ3928-000 DMJ3931-000 DMJ3944-000 551-056
Text: Silicon Beamless Schottky Diodes Ü A lp h Features • y For Microwave MIC Assembly & Automated High Volume Manufacturing Lines i j j m ib ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ Wide Product Range: Series Pair, Ring, Bridge,
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381mm
025mm)
0035X
089mn>
381nn
025nn)
381mn
C25nm)
DME3927-000
DME3930-000
DME3943-000
DMF3926
DMF3929
DMJ3928-000
DMJ3931-000
DMJ3944-000
551-056
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