HM6287HL-35
Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Text: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM
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M5M411664
Abstract: M5M411664AJ M5M411664ATP1 M5M411664A-6 M5M411664A-5 M5M411664A-7 ATP1
Text: MITSUBISHI LSIs Preliminary Spec. M5M411664AJ/ATP1-5,-6,-7,-5S,-6S,-7S Rev. 1.4 FAST PAGE MODE 1,048,576-BIT(65,536-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION FEATURES CAS Address OE access access access time time time (max.ns) (max.ns) (max.ns) Cycle Power
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M5M411664AJ/ATP1-5
576-BIT
536-WORD
16-BIT)
65536-word
16-bit
bac1664AJ/ATP1-5
M5M411664
M5M411664AJ
M5M411664ATP1
M5M411664A-6
M5M411664A-5
M5M411664A-7
ATP1
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M5M411665ATP3
Abstract: M5M411665AJ M5M411665A ATP3 M5M411665ATP2 M5M4116
Text: MITSUBISHI LSIs Preliminary Spec. M5M411665AJ/ATP2/ATP3-5,-6,-7,-5S,-6S,-7S Rev. 1.2 HYPER PAGE MODE 1,048,576-BIT(65,536-WORD BY 16-BIT) DYNAMIC RAM DESCRIPTION FEATURES CAS Address OE access access access time time time (max.ns) (max.ns) (max.ns) Cycle
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M5M411665AJ/ATP2/ATP3-5
576-BIT
536-WORD
16-BIT)
65536-word
16-bit
Note32
M5M411665ATP3
M5M411665AJ
M5M411665A
ATP3
M5M411665ATP2
M5M4116
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203A665
Abstract: J122 SMD TRANSISTOR 314 j122
Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness
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203A665
1x106
1x1014
1x109
1x10-11
1x1012
5962H98615
40-Lead
AS9000,
203A665
J122 SMD TRANSISTOR
314 j122
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Untitled
Abstract: No abstract text available
Text: 203A665 128K x 8 Radiation Hardened Static RAM – 3.3 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness
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203A665
5962H98615
40-Lead
1x106
1x1014
1x109
1x10-11
1x1012
AS9000,
x5040)
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238A792
Abstract: No abstract text available
Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness
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238A792
1x106
1x1014
1x109
1x10-11
64-Lead
AS9000,
238A792
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A1760
Abstract: 86-65-3 AEFJANTXV1N4100-1-BAE/TR/BAE
Text: 128K x 32 Radiation Hardened Static RAM MCM– 3.3V 238A792 Product Description Features Radiation • Fabricated with Bulk CMOS 0.5 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness
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238A792
64-Lead
1x106
1x1014
1x109
1x10-11
AS9000,
A1760
86-65-3
AEFJANTXV1N4100-1-BAE/TR/BAE
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH6408AD-15 5 2 4 2 8 8 -B IT 6 5 536-W O RD BY 8-BIT DYNAMIC RAM D E S C R IP T IO N The MH6408AD is 65536 word x 8 bit dynamic RAM and consists of eight industry standard 64K x 1 dynamic RAMs in leadless chip carrier. The mounting of leadless chip carriers on a ceramic
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MH6408AD-15
MH6408AD
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Untitled
Abstract: No abstract text available
Text: HM511663C Series 65536-word x 16-bit Dynamic RAM HITACHI ADE-203-695 Z Preliminary Rev. 0.0 Dec. 20, 1996 Description The Hitachi H M 511663C Series is a CMOS dynamic RAM organized 65,536-word X 16-bit. H M 511663C Series has realized higher density, higher performance and various functions by employing 0.8 Jim CMOS
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HM511663C
65536-word
16-bit
ADE-203-695
511663C
536-word
16-bit.
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M5M41166
Abstract: M5M4116 M5M411664
Text: MITSUBISHI LSIs M 5 M 4 1 1 6 6 4 A J .T P 1 - 5 ,- 6 ,- 7 ,-5 S ,- 6 S ,- 7 S _FAST PAGE MODE 1048576-BIT 65536-W ORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 65536-word by 16-bit dynamic RAMs, fabricated with a high performance CMOS process, and is ideal for
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1048576-BIT
5536-W
16-BIT)
65536-word
16-bit
M5M41166
M5M4116
M5M411664
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TIC42
Abstract: 40P0K M5M411664AJ M4116 m5m411664
Text: MITSUBISHI LSIs M 5 M 4 1 1 6 6 4 A J ,T P 1 -5 ,-6 ,-7 ,-5 S ,-6 S ,-7 S FAST PAGE MODE 1048576-BIT 65536-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 65536-word by 16-bit dynamic RAMs, fabricated with a high perform ance C M O S process, and is ideal for
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1048576-BIT
65536-WORD
16-BIT)
16-bit
40P0K
SOJ40-P-400-1
TIC42
40P0K
M5M411664AJ
M4116
m5m411664
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m5m411664
Abstract: No abstract text available
Text: MITSUBISHI MEMORY/ ASI C blE D • b S MT A E i 0018423 1T2 ■ M I T I MITSUBISHI LSIs M5M411664J,TP,RT-6,-7,-8,-6S,-7S,-8S _ FAST PAGE MODE 1.045.576-BIT(65,536-WQRD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 65536-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is
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M5M411664J
576-BIT
536-WQRD
16-BIT)
65536-word
16-bit
411664J
m5m411664
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 1 1 6 6 5 A J , T P 2 , T P 3 - 5 , - 6 , - 7 , - 5 S , - 6 S , - 7 S HYPER PAGE MODE 1048576-BIT 65536-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 65536-word by 16-bit dynamic RAMs, fabricated with a high perform ance C M O S process, and is ideal for
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1048576-BIT
65536-WORD
16-BIT)
16-bit
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A02H2
Abstract: EZ23 LC321664AT LC321664AT-80 TSOP44 7w7b A021-46
Text: Ordering number : EN % 4942 j _ CMOS LSI LC321664AT-80 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Preliminary Overview Package Dimensions The LC321664A series is a CMOS dynamic RAM operating on a single 5 V power source and having a
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EN4942
LC321664AT-80
LC321664A
65536-word
16-bit
0D15mÃ
A02I60
711707b
A02H2
EZ23
LC321664AT
LC321664AT-80
TSOP44
7w7b
A021-46
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M5M4464
Abstract: 65536X4 4464AP
Text: MITSUBISHI LSIs M5M4464AP, J, L-8, -10, -12, -15 2 6 2 1 4 4 -B IT 6 5 5 3 6 -W O R D BY 4 -B IT DYNAMIC RAM D A T A IN / D A TA OUT OE O' o use o f dynamic c irc u itry including sense amplifiers assures low power dissipation. M ultiplexed address inputs perm it
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M5M4464AP,
65536-word
18-pin
M5M4464
65536X4
4464AP
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M5K4164ANP
Abstract: M5K4164ANP-12 M5K4164ANP12
Text: MITSUBISHI LSIs M5K4164ANP-12, -15 6 5 5 3 6 -B IT 6 5 536-W O R D BY 1-BIT DYNAMIC RAM D ESC RIPTIO N PIN C O N F IG U R A T IO N (TOP VIEW ) This is a fa m ily o f 65 536-word by 1-bit dynamic RAMs, fabricated w ith the high performance N-channel silicongate
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M5K4164ANP-12,
536-word
16-pin
5K4164ANP-12,
M5K4164ANP
M5K4164ANP-12
M5K4164ANP12
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5082A CMOS LSI LC321664BJ, BM, BT-70/80 No. 5082A SA\YO 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Overview Package Dimensions The LC321664BJ, BM, BT is a CMOS dynamic RAM operating on a single 5 V power source and having a
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EN5082A
LC321664BJ,
BT-70/80
40-pin
A031BB
GG17b33.
A021B9
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sop-40 16-bit
Abstract: LC321664AJ LC321664AM SOJ40 MIFA ao3476
Text: Ordering number : EN 4795A CMOS LSI No LC321664AJ, AM-80 4795A S A \Y O 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Overview Package Dimensions The LC321664A series is a CMOS dynamic RAM operating on a single 5 V power source and having a
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LC321664A
AM-80
65536-word
16-bit
40-pin
40-pin.
LC321664AJ,
a0s159
sop-40 16-bit
LC321664AJ
LC321664AM
SOJ40
MIFA
ao3476
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5082Á CMOS LSI LC321664BJ, BM, BT-70/80 No. 5082A SA \YO 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Overview Package Dimensions The LC321664BJ, BM, BT is a CMOS dynamic RAM operating on a single 5 V power source and having a
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EN5082A
LC321664BJ,
BT-70/80
40-pin
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RAS 0910
Abstract: h 9128 cpa 17128 A02L LC321664BJ LC321664BM LC321664BT TSOP44
Text: Ordering number : EN5082Á CMOS LSI LC321664BJ, BM, BT-70/80 No. 5082A SA \YO 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Overview Package Dimensions The LC321664BJ, BM, BT is a CMOS dynamic RAM operating on a single 5 V power source and having a
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EN5082A
LC321664BJ,
BT-70/80
40-pin
RAS 0910
h 9128 cpa
17128
A02L
LC321664BJ
LC321664BM
LC321664BT
TSOP44
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M5M411665
Abstract: M5M4116 M5M411665AJ
Text: MITSUBISHI LSIs M5M411665AJ,TP2-5,-6,-7,-5S,-6S,-7S HYPER PAGE MODE 1048576-BIT 65536-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 65536-word by 16-bit dynam ic RAMs, fabricated with a high perform ance CMOS process, and is ideal for
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M5M411665AJ
1048576-BIT
65536-WORD
16-BIT)
16-bit
Note32
M5M411665
M5M4116
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HY53C464LS
Abstract: LASCR HY53C464S HY53C464 MCS131 MAY94 HY53C464LF HY53C464LS70 hy53c464lf70
Text: HY53C464 Series »HYUNDAI 64K X 4-bit CMOS DRAM DESCRIPTION The HY53C464 is feist dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C464
330mil
18pin
1AA02-20-MAY94
4b750flÃ
HY53C464S
HY53C464LS
LASCR
MCS131
MAY94
HY53C464LF
HY53C464LS70
hy53c464lf70
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