DCR3640H85
Abstract: No abstract text available
Text: DCR3640H85 Phase Control Thyristor Preliminary Information DS6140-2 October 2014 LN32030 KEY PARAMETERS FEATURES • Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 8500V 3640A 54000A 2000V/µs 200A/µs * Higher dV/dt selections available
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DCR3640H85
DS6140-2
LN32030)
4000A
000V/Â
DCR3640H85*
DCR3640H80
DCR3640H75
600mA,
-40our
DCR3640H85
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mosfet motor dc 48v
Abstract: IRHM9064 IRHM93064 JANSR2N7424
Text: PD - 91438A IRHM9064 IRHM 93064 JANSR2N7424 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -60 Volt, 0.05Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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1438A
IRHM9064
JANSR2N7424
mosfet motor dc 48v
IRHM9064
IRHM93064
JANSR2N7424
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IRHM9064
Abstract: IRHM93064 JANSR2N7424
Text: PD - 91438A IRHM9064 IRHM 93064 JANSR2N7424 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω, RAD HARD HEXFET -60 Volt, 0.05Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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1438A
IRHM9064
JANSR2N7424
IRHM9064
IRHM93064
JANSR2N7424
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Untitled
Abstract: No abstract text available
Text: PD - 91447A IRHNA9064 IRHNA93064 JANSR2N7424U JANSF2N7424U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD W , RAD HARD HEXFET -60 Volt, 0.045W International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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1447A
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IRHNA9064
Abstract: IRHNA93064 JANSF2N7424U JANSR2N7424U
Text: PD - 91447A IRHNA9064 IRHNA93064 JANSR2N7424U JANSF2N7424U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω, RAD HARD HEXFET -60 Volt, 0.045Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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1447A
IRHNA9064
IRHNA93064
JANSR2N7424U
JANSF2N7424U
re310)
IRHNA9064
IRHNA93064
JANSF2N7424U
JANSR2N7424U
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55N50F
Abstract: No abstract text available
Text: Advance Technical Information HiPerRFTM Power MOSFETs IXFN 55N50F VDSS ID25 F-Class: MegaHertz Switching RDS on D N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr trr ≤ 250 ns S Symbol Test Conditions Maximum Ratings
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55N50F
OT-227
E153432
55N50F
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AUIRL1404S
Abstract: AUIRL1404 AN-994 3L-TO-262 diode DLA 5.9
Text: PD - 96385A AUTOMOTIVE GRADE AUIRL1404S AUIRL1404L Features l l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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6385A
AUIRL1404S
AUIRL1404L
AUIRL1404S
AUIRL1404
AN-994
3L-TO-262
diode DLA 5.9
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IXFX55N50F
Abstract: IXFK55N50F ixfn*55N50F 55N50F IXFN55N50F PLUS247
Text: Advance Technical Information IXFK55N50F IXFX55N50F HiPerRFTM Power MOSFETs VDSS ID25 = = 500V 55A Ω 85mΩ 250ns RDS on ≤ ≤ trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-264 (IXFK)
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IXFK55N50F
IXFX55N50F
250ns
O-264
IXFX55N50F
IXFK55N50F
ixfn*55N50F
55N50F
IXFN55N50F
PLUS247
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95A 640
Abstract: AN-994 IRL1404L IRL1404S
Text: PD - 95148 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1404SPbF IRL1404LPbF l HEXFET Power MOSFET l D VDSS = 40V RDS on = 0.004Ω
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IRL1404SPbF
IRL1404LPbF
AN-994.
95A 640
AN-994
IRL1404L
IRL1404S
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Untitled
Abstract: No abstract text available
Text: PD - 96385 AUTOMOTIVE GRADE AUIRL1404S AUIRL1404L Features l l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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AUIRL1404S
AUIRL1404L
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Untitled
Abstract: No abstract text available
Text: PD - 96385A AUTOMOTIVE GRADE AUIRL1404S AUIRL1404L Features l l l l l l l l l l HEXFET Power MOSFET Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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6385A
AUIRL1404S
AUIRL1404L
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Untitled
Abstract: No abstract text available
Text: PD - 95148 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1404SPbF IRL1404LPbF l HEXFET Power MOSFET l D VDSS = 40V RDS on = 0.004Ω
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IRL1404SPbF
IRL1404LPbF
AN-994.
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerRFTM Power MOSFETs VDSS ID25 IXFK55N50F IXFX55N50F = = 500V 55A Ω 85mΩ 250ns RDS on ≤ ≤ trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-264 (IXFK)
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IXFK55N50F
IXFX55N50F
250ns
O-264
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AN-994
Abstract: IRL1404L IRL1404S
Text: PD - 95148 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1404SPbF IRL1404LPbF l HEXFET Power MOSFET l D VDSS = 40V RDS on = 0.004Ω
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IRL1404SPbF
IRL1404LPbF
AN-994.
AN-994
IRL1404L
IRL1404S
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55n50f
Abstract: No abstract text available
Text: HiPerRFTM Power MOSFETs IXFX 55N50F IXFK 55N50F VDSS = 500 V ID25 = 55 A Ω RDS on = 85 mΩ F-Class: MegaHertz Switching trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions
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55N50F
55N50F
247TM
125OC
728B1
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55n50f
Abstract: 125OC
Text: HiPerRF TM Power MOSFETs IXFX 55N50F IXFK 55N50F VDSS = 500 V ID25 = 55 A Ω RDS on = 85 mΩ F-Class: MegaHertz Switching trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions
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55N50F
247TM
728B1
55n50f
125OC
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isoplus
Abstract: transistor tl 187 780 AC 55N50F
Text: HiPerRFTM Power MOSFETs IXFR 55N50F F-Class: MegaHertz Switching trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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55N50F
247TM
E153432
405B2
isoplus
transistor tl 187
780 AC
55N50F
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Untitled
Abstract: No abstract text available
Text: PD - 93854A Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRL1404S IRL1404L HEXFET Power MOSFET l D VDSS = 40V RDS on = 0.004Ω G Seventh Generation HEXFET® power MOSFETs from
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3854A
IRL1404S
IRL1404L
AN-994.
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95A 640
Abstract: IRL1404 IRF530S IRL1404L IRL1404S IRL3103L 95A MARKING 95A MARKING CODE
Text: PD - 93854A Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRL1404S IRL1404L l HEXFET Power MOSFET D VDSS = 40V RDS on = 0.004Ω G Seventh Generation HEXFET® power MOSFETs from
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3854A
IRL1404S
IRL1404L
AN-994.
95A 640
IRL1404
IRF530S
IRL1404L
IRL1404S
IRL3103L
95A MARKING
95A MARKING CODE
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IRF530S
Abstract: IRL1404L IRL1404S IRL3103L
Text: PD - 93854A Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRL1404S IRL1404L l HEXFET Power MOSFET D VDSS = 40V RDS on = 0.004Ω G Seventh Generation HEXFET® power MOSFETs from
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3854A
IRL1404S
IRL1404L
AN-994.
IRF530S
IRL1404L
IRL1404S
IRL3103L
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information HiPerRFTM Power MOSFETs IXFR 55N50F F-Class: MegaHertz Switching trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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55N50F
247TM
E153432
728B1
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55N50F
Abstract: No abstract text available
Text: Advance Technical Information HiPerRFTM Power MOSFETs IXFR 55N50F F-Class: MegaHertz Switching trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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55N50F
247TM
E153432
728B1
55N50F
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SLAM-0122
Abstract: SLAM0122 transformer 12 v center tapped 32 mhz 0122 fet rf high power
Text: SLAM-0122 ULTRA-LINEAR, 50 WATT, 2 TO 32 MHz CLASS A, SELF BIASED POWER FET 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY m- 27.94 -» FEATURES L 0.435 J (11.05) 1 DV “ 1 D2 / 0.124 2•PL (3.15) ' ♦
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SLAM-0122
SLAM-0122
0W/47dBm
W/34dBm
20MHz.
SLAM0122
transformer 12 v center tapped
32 mhz
0122
fet rf high power
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Untitled
Abstract: No abstract text available
Text: Kihgbright SUPER BRIGHT LED LAMPS W 7113 W 53 I Part No. Material X D nm W7113SRC/DU W7113SRC/DV W7113SRC/DW W7113SRC/E W7113SRC/F W7113SRD/D W7113SRD/E W7113SRD/F W7113SRD/G W7113SRD/H W7113SURC W7113SURC/E W7113SEC W7113SET W7113SED W7113SEC/E W7113SEC/H
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W7113SRC/DU
W7113SRC/DV
W7113SRC/DW
W7113SRC/E
W7113SRC/F
W7113SRD/D
W7113SRD/E
W7113SRD/F
W7113SRD/G
W7113SRD/H
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