AD8313-EVAL
Abstract: AD8313 EVAL-AD8313EB sma 906 SMA pcb footprint Connector
Text: AD8313 Evaluation Board EVAL-AD8313EB BOARD DESCRIPTION Schematic and Layout Figure 5 shows the schematic of the evaluation board that was used to characterize the AD8313. Note that uninstalled components are drawn in as dashed. This is a 3-layer board signal, ground, and power , with a Duroid
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AD8313
EVAL-AD8313EB
AD8313.
680pF
AD8313
C03325
AD8313-EVAL
EVAL-AD8313EB
sma 906
SMA pcb footprint Connector
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RO4403
Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
Text: Ordering Information: Standard Thickness, Tolerance and Panel Size Rogers’ high frequency laminates can be purchased by contacting a Rogers Customer Service Representative at 480 961-1382 or one of our international offices listed below. To ensure that you receive the material for your application, please include order information for each of the
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6010LM,
RO3003
RO3035
RO3203
RO3006
RO3206
RO3010
RO3210
RO4003C
RO4350B
RO4403
Rogers RO4003
rt/duroid 5880
RO4450F
rogers 5880
RO3006
rogers laminate materials
RO4450B
RO3210
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SMTO-8
Abstract: WATKINS-JOHNSON CO WATKINS-JOHNSON CO SMTO-8 IN5880
Text: A Revolutionary RF/Microwave "Surface-Mount" Product Line by: Louis M. Seieroe, Kenneth S. Ledford, Timothy J. Bianey and Louis Hsiao Watkins-Johnson Company Palo Alto, CA The emphasis on improving system per formance by adding new features, while at the same time reducing overall system
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96-hour
SMTO-8
WATKINS-JOHNSON CO
WATKINS-JOHNSON CO SMTO-8
IN5880
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RF331
Abstract: RT DUROID 5880 RF3311
Text: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT
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RF311
RF331
RF331
HP8722D
RF311/RF331
RT DUROID 5880
RF3311
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RF311
Abstract: No abstract text available
Text: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 SPDT RF TO-5 relay Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT ARMATURE LOWER STATIONARY CONTACT ENVIRONMENTAL AND
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RF311
RF311
RF331
HP8722D
RF311/RF331
RF311RF331\022007\Q1
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rogers 5880
Abstract: RT DUROID 5880 rt/duroid 5880
Text: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT
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RF311
RF331
RF331
HP8722D
RF311/RF331
rogers 5880
RT DUROID 5880
rt/duroid 5880
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AN-A002
Abstract: AN-G002 testing amplifier circuit ATF-10136 TF-10136 low noise design ATF 10136 stub tuner matching 10136 stub tuner waveguide AM Noise Reduction System
Text: W hpfiM %PH AE CWKLAERT DT mL' AN-G 002 A TF-10136 Dem onstration Am plifier Novem ber, 1990 Introduction This Applications Bulletin describes a one stage low noise am plifier designed using the HP ATF-10136 G aAs FET transistor. This amplifier demonstrates the capabilities of this
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TF-10136
ATF-10136
ATF-10136.
ATF10136
5091-4863E
AN-A002
AN-G002
testing amplifier circuit
low noise design ATF 10136
stub tuner matching
10136
stub tuner waveguide
AM Noise Reduction System
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ATF13136
Abstract: AN-A002 transistor atf TVRO stub tuner matching 5091-9055E ATF-13136
Text: ATF-13X36 Demonstration Amplifier Application Note G001 Although the following information covers the ATF-13136, the ATF-13336 and the ATF-13736 could be substituted, with some degradation in noise performance. Introduction This Application Note describes a one stage low noise amplifier
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ATF-13X36
ATF-13136,
ATF-13336
ATF-13736
ATF-13136.
ATF-13136
5091-9055E
5967-5487E
ATF13136
AN-A002
transistor atf
TVRO
stub tuner matching
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rf311
Abstract: RF311RF331 J412 to-5 RELAY-SPDT RF300 motor RT DUROID 5880 er116c
Text: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT
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RF311
RF331
RF311
RF331
ER116C
ER136C
RF311RF331
J412
to-5 RELAY-SPDT
RF300 motor
RT DUROID 5880
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J329 transistor
Abstract: 20AWG TPR400A j302
Text: TPR400A 400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The 60198 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low thermal
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TPR400A
25oC2
150oC
200oC
20AWG,
10mils
J329 transistor
20AWG
TPR400A
j302
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j329
Abstract: J3-29 duroid 5880 20AWG TPR400A J251
Text: TPR400A 400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The TPR400A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low
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TPR400A
TPR400A
25oC2
150oC
200oC
20AWG,
10mils
j329
J3-29
duroid 5880
20AWG
J251
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vogt transformer
Abstract: toko balun TOKO 10.7 transformer RT5880 VOGT pd Transformer tee transformer vogt Vogt Siemens Halbleiter
Text: ICs for Communications LNA/MIXER PMB 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 GLWLRQ 3XEOLVKHG E\ 6LHPHQV $* %HUHLFK +DOEOHLWHU 0DUNHWLQJ .RPPXQLNDWLRQ %DODQVWUDH 0QFKHQ Siemens AG 1995. All Rights Reserved.
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T2332-XV12-P2-7600
vogt transformer
toko balun
TOKO 10.7 transformer
RT5880
VOGT pd
Transformer tee
transformer vogt
Vogt
Siemens Halbleiter
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gold detector circuit free
Abstract: coil gold detector microstrip directional coupler yig oscillator rt/duroid 5880 hfss directional coupler sampling gate stripline directional couplers 20ghz vco ghz coupler
Text: Novel Design for Microwave Source Author: Saddique Mohammed Published in: Microwave Engineering Europe Date: October 1998 BACKGROUND As in all other fields of electronics, the microwave subsystem is undergoing a period of miniaturisation. The drive from microwave component purchasers who want to pack as much
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T2333
Abstract: K 2333 RT5880 GPS05864 teflon s-parameter gilbert cell mixer
Text: ICs for Communications Mixer/Amplifier PMB 2333 Version 1.2 Preliminary Data Sheet 02.96 T2333-XV12-P1-7600 PMB 2333 Revision History: Previous Version: Page in Version Page (in new Version) Current Version: 02.96 none Subjects (major changes since last revision)
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T2333-XV12-P1-7600
GPS05864
P-TSSOP-16
T2333
K 2333
RT5880
GPS05864
teflon s-parameter
gilbert cell mixer
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MADL-0110
Abstract: ODS-30 MADL01 MADL-011009-01340W
Text: MADL-0110 Series Silicon PIN Limiter Diodes V1 Chip Outline Features • • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation
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MADL-0110
ODS-30
MADL01
MADL-011009-01340W
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Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73,
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T2332-XV12-P2-7600
053SbO
fl235b05
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"if amplifier" siemens
Abstract: No abstract text available
Text: PMB 2333 SIEMENS Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w . 2 F e a tu re s .2
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ITSB8434
"if amplifier" siemens
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RT5880
Abstract: teflon s-parameter amplifier mixer circuit diagram smd 2a y 3c TOKO 10.7 transformer vogt transformer LO dc to 3 ghz lna amplifier application circuits vogt s2 t 2333 vogt l4
Text: S IE M E N S PMB 2333 Table of Contents Page 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w . 2 F e a tu re s. 2
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P-TSSOP-16
RT5880
teflon s-parameter
amplifier mixer circuit diagram
smd 2a y 3c
TOKO 10.7 transformer
vogt transformer LO
dc to 3 ghz lna amplifier application circuits
vogt s2
t 2333
vogt l4
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NE3517S03
Abstract: rt/duroid 5880 RT DUROID 5880 NE3517S03-A marking t1c rogers 5880 HS350 NE3517S03-T1D-A NE3517S03-T1C rt duroid
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS
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NE3517S03
NE3517S03-T1C
NE3517S03-T1C-A
NE3517S03-T1D
NE3517S03-T1D-A
NE3517S03
rt/duroid 5880
RT DUROID 5880
NE3517S03-A
marking t1c
rogers 5880
HS350
NE3517S03-T1D-A
NE3517S03-T1C
rt duroid
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NE3514S02
Abstract: NE3514 NE3514S02-A transistor "micro-x" "marking" 3 RT DUROID 5880 NE3514S02-T1D NE3514S02-T1C-A ir260 N-CHANNEL HJ-FET NE3514S02-T1D-A
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz • Micro-X plastic S02 package APPLICATIONS
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NE3514S02
NE3514S02-T1C
NE3514S02-T1D
NE3514S02-T1C-A
NE3514S02-T1D-A
NE3514S02-A
25Cted,
PG10593EJ01V0DS
NE3514S02
NE3514
NE3514S02-A
transistor "micro-x" "marking" 3
RT DUROID 5880
ir260
N-CHANNEL HJ-FET
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tip 134
Abstract: No abstract text available
Text: MA4L Series Silicon PIN Limiter Chips RoHS Compliant M/A-COM Products Rev. V9 Features • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven and Reliable Silicon Nitride Passivation
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MA4L401-30
Abstract: MA4L011-186 ma4l011 MA4L401-132 rogers 5880 MA4L062-134 1056 coil gold detector MA4L011-30 SMD MARKING CODE HF
Text: MA4L Series Silicon PIN Limiter Diodes V13 Features • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation RoHS Compliant
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NE3517S03-A
Abstract: NE3517S03-T1C NE3517S03 HS350
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES • Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz • K-band Micro-X plastic S03 package APPLICATIONS
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NE3517S03
NE3517S03-T1C
NE3517S03-T1D
NE3517S03-T1C-A
NE3517S03-T1D-A
NE3517S03-A
PG10787EJ01V0DS
NE3517S03-A
NE3517S03
HS350
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rogers 5880
Abstract: No abstract text available
Text: MA4L Series Silicon PIN Limiter Diodes V14 Features • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation RoHS Compliant
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