Untitled
Abstract: No abstract text available
Text: PHA3135-130M RADAR PULSED POWER MODULE 115, 130, 145 Watts, 3.1 - 3.5 GHz, 100 S Pulse, 10% Duty Rev 12/05/2005 OUTLINE DRAWING FEATURES • NPN Silicon Bipolar Transistor • Input and Output Matched to 50Ω • Duroid Circuit Board • Easily Combined for High Power Transmitters
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PHA3135-130M
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GP 005
Abstract: Load VSWR tolerance PHA3135-130M VCC36
Text: Radar Pulsed Power Module, 115, 130, 145W, 100µs Pulse 3.1 - 3.5 GHz PHA3135-130M V4.00 Features ● ● ● ● ● NPN Silicon Power Transistor Input and Output Matched to 50Ω Duroid Circuit Board Easily Combined for High Power Transmitters Plated Copper Flange
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PHA3135-130M
GP 005
Load VSWR tolerance
PHA3135-130M
VCC36
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PHA3135-130M
Abstract: No abstract text available
Text: PHA3135-130M Radar Pulsed Power Module 115, 130, 145W, 3.1-3.5 GHz, 100 s Pulse, 10% Duty Outline Drawing Features • • • • • M/A-COM Products Released, 04 Feb 08 NPN silicon bipolar transistor Input and output matched to 50Ω Duroid circuit board
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PHA3135-130M
PHA3135-130M
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PHA2731-140L
Abstract: VCC36
Text: Radar Pulsed Power Module, 140W, 300µs, 10% Duty 2.7 - 3.1 GHz PHA2731-140L V4.00 Features ● ● ● ● ● NPN Silicon Power Transistors Input and Output Matched to 50Ω Duroid Circuit Board Easily Combined For High Power Transmitters Plated Copper Flange
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PHA2731-140L
PHA2731-140L
VCC36
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plate DBM 01
Abstract: No abstract text available
Text: DOUBLE BALANCED MIXER MODEL ADX158L-2 Available as: ADX158L-2, .664 “x .964” flatpack ADX2 Duroid Mixer Features RF: 8 to 15 GHz LO: 8 to 15 GHz IF: DC to 1 GHz Conversion Loss: 5.5 dB Typical LO to RF Isolation: 30 dB Typical Electrical Specifications (1) :
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ADX158L-2
ADX158L-2,
plate DBM 01
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PHA2731-140L
Abstract: VCC36
Text: PHA2731-140L Radar Pulsed Power Module, 140W, 300 µs, 10% Duty 2.7 - 3.1 GHz Rev. V4 Features • • • • • NPN Silicon Power Transistors Input and Output Matched to 50W Duroid Circuit Board Easily Combined For High Power Transmitters Plated Copper Flange
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PHA2731-140L
PHA2731-140L
VCC36
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PHA3135-130M
Abstract: No abstract text available
Text: PHA3135-130M Radar Pulsed Power Module 115, 130, 145W, 3.1-3.5 GHz, 100 s Pulse, 10% Duty Outline Drawing Features • • • • • M/A-COM Products Released, 04 Feb 08 NPN silicon bipolar transistor Input and output matched to 50Ω Duroid circuit board
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PHA3135-130M
Frequ44
PHA3135-130M
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AD8313-EVAL
Abstract: AD8313 EVAL-AD8313EB sma 906 SMA pcb footprint Connector
Text: AD8313 Evaluation Board EVAL-AD8313EB BOARD DESCRIPTION Schematic and Layout Figure 5 shows the schematic of the evaluation board that was used to characterize the AD8313. Note that uninstalled components are drawn in as dashed. This is a 3-layer board signal, ground, and power , with a Duroid
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AD8313
EVAL-AD8313EB
AD8313.
680pF
AD8313
C03325
AD8313-EVAL
EVAL-AD8313EB
sma 906
SMA pcb footprint Connector
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Untitled
Abstract: No abstract text available
Text: Radar Pulsed Power Module, 140W, 300µs, 10% Duty 2.7 - 3.1 GHz PHA2731-140L V4.00 Features ● ● ● ● ● NPN Silicon Power Transistors Input and Output Matched to 50Ω Duroid Circuit Board Easily Combined For High Power Transmitters Plated Copper Flange
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PHA2731-140L
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Untitled
Abstract: No abstract text available
Text: 2729GN-270 Rev 2 2729GN – 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF
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2729GN-270
2729GN
55-QP
55-QP
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Untitled
Abstract: No abstract text available
Text: 2730GN-100L Rev 1 2730GN – 100L 100 Watts, 3 mS , 30%, +55 Volts 2700 - 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2730GN-100M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF
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2730GN-100L
2730GN
55-QP
2730GN-100M
55-QP
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BLS6G2731-120
Abstract: No abstract text available
Text: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.
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BLS6G2731-120;
BLS6G2731S-120
BLS6G2731-120
6G2731S-120
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transistor d 1302
Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance
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BLS6G2933S-130
BLS6G2933S-130
transistor d 1302
smd transistor 927
smd transistor equivalent table
Duroid 6006
sot922
radar circuit component
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BLS6G3135S-120
Abstract: BLS6G3135-120
Text: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance
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BLS6G3135-120;
BLS6G3135S-120
BLS6G3135-120
6G3135S-120
BLS6G3135S-120
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NE76038
Abstract: uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise
Text: California Eastern Laboratories AN1015 APPLICATION NOTE Low Cost, High Performance Receiver For Wireless Applications INTRODUCTION down converter. The LNA was designed using a discrete low noise GaAs MESFET NE76038 with a matching structure made using discrete components. The NE76038 is fabricated
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AN1015
NE76038)
NE76038
uPC2710
uPC2721
AN1015
UPC2710T
UPC2721GR
low noise block down converter
1 henry INDUCTOR
POWER AMPLIFIER CIRCUIT DIAGRAM 10000
L4* Low noise
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VCC36
Abstract: No abstract text available
Text: /MÄCOM m an A M P company Radar Pulsed Power Module, 140W, 300^s, 10% Duty 2.7 - 3.1 GHZ PHA2731-140L V4.00 Features • • • • • NPN Silicon Power Transistors Input and Output Matched to 50Q Duroid Circuit Board Easily Combined For High Power Transmitters
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PHA2731-140L
005VSWR
VCC36
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Untitled
Abstract: No abstract text available
Text: L-Band Uplink Power Module PHA1618-45 45 Watts, 1608-1628 MHz, 85 ms Pulse, 5% Duty Features • • • • • Outline Drawing Operation 1608-1628 MHz NPN Silicon Power Transistors TTL Compatible Burst Control Duroid Circuit Board 50 Ohms Input and Output Matched
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PHA1618-45
Sb4220S
GG01377
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DBX-3503
Abstract: DBY-3503M DBX-3503M GI05 Avantek dbx ic 3503M Avantek rf mixers
Text: Q DBX-3503M /H DBY-3503M /H Duroid Mixer .05 to 3 GHz Triple Balanced avantek FEATURES APPLICATIONS • Two Schottky Diode Quads • 50 MHz to 3 GHz RF and LO Bandwidth • 1 MHz to 3 GHz IF Bandwidth • 7 dB Conversion Loss/NF • 30 dB Isolation • Low VSWR, All Ports
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DBX-3503M
DBY-3503M
DBX-3503
GI05
Avantek dbx
ic 3503M
Avantek rf mixers
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DBX-158L
Abstract: Avantek dbx Avantek mixer DBX-158 DBX158 DBX-158L/M
Text: C avantek DBX-158L/M /H DBY-158L/M /H Duroid Mixer 8 to 15 GHz Double Balanced FEATURES APPLICATIONS • • • • • Low Cost 11.7 to 12.2 GHz Downconverter • Threat Warning Systems • Self Protection Jammers • Wideband Heterodyned Receivers Single Schottky Diode Quad
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DBX-158L/M
DBY-158L/M
DBX-158L
Avantek dbx
Avantek mixer
DBX-158
DBX158
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DBX-167
Abstract: Avantek dbx DBX16
Text: Q DBX-167L/M /H DBY-167L/M /H Duroid Mixer 7 to 16 GHz Double Balanced avantek FEATURES APPLICATIONS • • • • • 7 to 16 GHz Band Folding Applications • Narrowband, Low-Cost Applications • EW and ECM Systems • Wideband Heterodyned Receivers Single Schottky Diode Quad
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DBX-167L/M
DBY-167L/M
DBX-167
Avantek dbx
DBX16
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NPN 1000w
Abstract: No abstract text available
Text: Ar f ì M m a n A M P co m pa n y Radar Pulsed Power Module, 150W, 100^s, 10% Duty 3.1 - 3.5 GHZ PHA3135-150M Features • • • • • NPN Silicon Pow er Transistors Input and O utput M atched to 50Q Duroid Circuit Board Easily Com bined For High Pow er Transmitters
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PHA3135-150M
NPN 1000w
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DBX-184
Abstract: Avantek dbx 501B3 Avantek UT DBY-184LS/MS/HS DBX-184LS/MS/HS
Text: O avantek DBX-184LS/MS/HS DBY-184LS/MS/HS Duroid Mixer 4 to 18 GHz Double Balanced FEATURES APPLICATIONS • • • • • • 4 to 18 GHz Swept Frequency Applications • Optimized for Increased L to I Isolation • EW Systems • Wideband Heterodyned Receivers
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DBX-184LS/MS/HS
DBY-184LS/MS/HS
DBX-184
Avantek dbx
501B3
Avantek UT
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DBX-824
Abstract: dbx824 Avantek+dbx+824M
Text: O DBX-824M/H DBY-824M/H Duroid Mixer 2 to 8 GHz Triple Balanced avan tek FEATURES • Two Schottky Diode Quads • .005 to 4.0 GHz IF Bandwidth • Up to +32 dBm Input Intercept Point APPLICATIONS • Up Conversion Applications that Require Wide Low Frequency
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DBX-824M/H
DBY-824M/H
DBX-824
dbx824
Avantek+dbx+824M
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ferroxcube ferrite beads
Abstract: N15W N25W thomson microwave transistor 2N5946 N5946 TWX510 THOMSON-CSF electrolytic vk 200 N30W
Text: □4C D I 7 ^ 5 3 7 ' S G S-THOMSON T- ss - t t 00000^5 0 l > SSM S O L ID ST A T E M IC R O W A V E 2 N 5 9 4 6 ; !r THQMSON-CSF COMPONENTS CORPORATION I;Montgomeryvilie, PA 18936• 215 362-8500■ TWX510-661-7299 UHF C O M M U N IC A T IO N S T RA N SISTO R
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N5946
TWX510
2N5946
56-590-65/3B
200/19-4B
ferroxcube ferrite beads
N15W
N25W
thomson microwave transistor
THOMSON-CSF electrolytic
vk 200
N30W
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