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    DUAL TRANSISTOR SOT23 Search Results

    DUAL TRANSISTOR SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    DUAL TRANSISTOR SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ZDT1049

    Abstract: ZXT12N50DX NPN SOT23-6 sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 zdt705 transistor PNP 5 w ZDT751 DUAL TRANSISTOR
    Text: Multichip Devices Dual Transistor Combinations Various transistor combinations have been developed to meet our customers requirements for reduced component count and smaller packaging, including dual transisitors and traditional H-bridge configurations consisting of two NPN and two


    Original     		ZDT1147 ZXTD1M832 ZXT12P12DX ZXTD6717E6 ZXTDAM832 ZXTDA1M832 ZDT717 ZDT617 ZDT1048 ZXTDBM832 ZDT1049 ZXT12N50DX NPN SOT23-6 sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 zdt705 transistor PNP 5 w ZDT751 DUAL TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: LS302 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS302 is a monolithic pair of high voltage SuperBeta NPN transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring


    Original     		LS302 OT-23 OT-23 PDF

    Si4539DY

    Abstract: SOIC-16
    Text: Si4539DY Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		Si4539DY SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: June 1998 FDS8958A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		FDS8958A PDF

    8928a

    Abstract: SOIC-16 FDS8928A
    Text: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		FDS8928A FDS8928A 8928a SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: LS120 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT120 The LS120 is a monolithic pair of NPN transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching.


    Original     		LS120 IT120 OT-23 IT120. PDF

    PMGD400UN

    Abstract: No abstract text available
    Text: PMGD400UN Dual N-channel µTrenchMOS ultra low level FET Rev. 01 — 3 March 2004 MBD128 Product data 1. Product profile 1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PMGD400UN MBD128 OT363 SC-88) PMGD400UN PDF

    SOT363 MARKING CODE 7M

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5211DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These


    Original     		LMUN5211DW1T1G LMUN5211DW1T1 SOT363 MARKING CODE 7M PDF

    SOT23-6L

    Abstract: SOT-23-6L CA SOT 25 marking 6l STN6561 ST2300 IDM-10 N -Channel power Sot 6
    Text: N6561 ST STN6561 Dual N Channel Enhancement Mode MOSFET 2.8A DESCRIPTION The STN6561 is the Dual N-Channel enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original     		STN6561 STN6561 OT-23-6L lSTN6561 ST2300 SOT23-6L SOT-23-6L CA SOT 25 marking 6l IDM-10 N -Channel power Sot 6 PDF

    NDS9925A

    Abstract: SOIC-16 8G24
    Text: May 1998 NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original     		NDS9925A OT-23 NDS9925A SOIC-16 8G24 PDF

    FDS8934A

    Abstract: SOIC-16
    Text: May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		FDS8934A OT-23 FDS8934A SOIC-16 PDF

    NDS9945

    Abstract: SOIC-16 OC601
    Text: May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS9945 OT-23 NDS9945 SOIC-16 OC601 PDF

    NDS9955

    Abstract: SOIC-16
    Text: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS9955 OT-23 NDS9955 SOIC-16 PDF

    9936A

    Abstract: FDS9936A SOIC-16
    Text: May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		FDS9936A OT-23 9936A FDS9936A SOIC-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1998 FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		FDS8934A OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: May 1998 NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		NDS9945 OT-23 PDF

    9936A

    Abstract: F852 FDS9936A L86Z SOIC-16 F011 F63TNR
    Text: May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		FDS9936A OT-23 9936A F852 FDS9936A L86Z SOIC-16 F011 F63TNR PDF

    014 IR MOSFET Transistor

    Abstract: MOSFET sot23-6 dual RCE SOT23-6 20 amp MOSFET transistor schottky diode MLP832 ZXTS1000E6
    Text: Multichip Devices Dual Schottky Diode, Transistor & Schottky Diode Combinations Packaged in both the SOT23-6 and the innovative 3mm x 2mm MLP micro leaded package outline, this range of combination duals comprises ultra low saturation NPN or PNP transistors and a Schottky barrier diode (1 amp in the case of


    Original     		OT23-6 140mV Scho-20 MLP832 ZXTS1000E6 ZX3CD1S1M832 ZX3CD2S1M832 ZX3CD3S1M832 MLP832 014 IR MOSFET Transistor MOSFET sot23-6 dual RCE SOT23-6 20 amp MOSFET transistor schottky diode PDF

    235L

    Abstract: FMS4
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-5L Plastic-Encapsulate Transistors SOT-23-5L FMS3,FMS4 DUAL TRANSISTOR FEATURES High breakdown voltage MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector- Base Voltage


    Original     		OT-23-5L OT-23-5L -100V, -10mA, 100MHz 235L FMS4 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel


    Original     		LMBT5551DW1T1G 3000/Tape LMBT5551DW1T3G 10000/Tape OT-363/SC-88 PDF

    SOT-223-S

    Abstract: SEW SOT23
    Text: F A IR C H IL D SEM ICONDUCTO R August 1997 m FDS8936S Dual N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		FDS8936S SOT-223-S SEW SOT23 PDF

    DSAIH0002562

    Abstract: No abstract text available
    Text: Dual Switching Diodes SMD SOT-23 Plastic Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		OT-23 DSAIH0002562 PDF

    DSAIH0002562

    Abstract: No abstract text available
    Text: SMD SOT-23 Plastic Dual Switching Diodes Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		OT-23 DSAIH0002562 PDF

    BKC Semiconductors

    Abstract: LR1 transistor smd transistor LR
    Text: SMD SOT-23 Plastic Use Advantages Dual Switching Diodes n a- Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,


    OCR Scan     		OT-23 BKC Semiconductors LR1 transistor smd transistor LR PDF