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    DUAL N-CHANNEL POWERTRENCH MOSFET Search Results

    DUAL N-CHANNEL POWERTRENCH MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DUAL N-CHANNEL POWERTRENCH MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDMS7650DC

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 100 A, 0.99 mΩ Features „ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMS7650DC FDMS7650DC

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 49 A, 2.6 mΩ Features „ Dual CoolTM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMS3008SDC FDMS3008SDC

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 65 A, 2.6 mΩ Features „ Dual CoolTM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 49 A, 2.6 mΩ Features ̈ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF

    FDMS7650DC

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 100 A, 0.99 mΩ Features „ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


    Original     		PDF

    FDMS7650DC

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 0.99 mΩ Features „ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMS7650DC FDMS7650DC

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ General Description Features ̈ Dual Cool TM This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 100 A, 0.99 mΩ Features ̈ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF

    FDS4897C

    Abstract: Q1/KIA6402P
    Text: FDS4897C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS4897C FDS4897C Q1/KIA6402P

    FDS4885C

    Abstract: 40v 7.5a P-Channel N-Channel
    Text: FDS4885C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS4885C FDS4885C 40v 7.5a P-Channel N-Channel

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS8958A L86Z
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A CBVK741B019 F011 F63TNR F852 FDS8958A L86Z

    FDS8960C

    Abstract: No abstract text available
    Text: FDS8960C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8960C FDS8960C

    FDS8958A

    Abstract: No abstract text available
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958A

    Untitled

    Abstract: No abstract text available
    Text: FDS8958 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958 FDS8958 AN-4143: FAN7310) AN-6016: AN-6016 FAN7311) NF073

    FDS8962C

    Abstract: No abstract text available
    Text: FDS8962C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8962C FDS8962C

    FDS8958A

    Abstract: No abstract text available
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958A

    FDS8958A

    Abstract: 58q2
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958A 58q2

    FDS8960C

    Abstract: Dual n Dual N & P-Channel
    Text: FDS8960C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8960C FDS8960C Dual n Dual N & P-Channel

    FDS4895C

    Abstract: PD-46
    Text: FDS4895C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS4895C FDS4895C PD-46

    Untitled

    Abstract: No abstract text available
    Text: FDS4897C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS4897C

    fds8958

    Abstract: No abstract text available
    Text: FDS8958 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958 fds8958

    FDS8958

    Abstract: FDS8958A FDS8958A-F085
    Text: FDS8958A_F085 tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A FDS8958 FDS8958A-F085

    Untitled

    Abstract: No abstract text available
    Text: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize


    Original     		PDF FDS8958A

    Untitled

    Abstract: No abstract text available
    Text: FDMS3016DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mΩ General Description Features ̈ Dual Cool TM This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package


    Original     		PDF FDMS3016DC