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    DUAL INFRARED TRANSISTOR Search Results

    DUAL INFRARED TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    Infrared-Human-Sensor Renesas Electronics Corporation Infrared Human Sensor Reference Design Visit Renesas Electronics Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    DUAL INFRARED TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOCD207

    Abstract: two transistor forward
    Text: MOCD207 HIGH DENSITY MOUNTING DUAL CHANNEL OPTICALLY COUPLED ISOLATOR Dimensions in mm DESCRIPTION The MOCD207 optically coupled isolator consists of an two infrared light emitting diodes and two NPN silicon photo transistors in a space efficient dual in line plastic package.


    Original     		PDF MOCD207 MOCD207 3750VRMS 10mAIF 10mAIF, 500VDC DC93131 two transistor forward

    MOCD217

    Abstract: No abstract text available
    Text: MOCD217 HIGH DENSITY MOUNTING DUAL CHANNEL OPTICALLY COUPLED ISOLATOR Dimensions in mm DESCRIPTION The MOCD217 optically coupled isolator consists of an two infrared light emitting diodes and two NPN silicon photo transistors in a space efficient dual in line plastic package.


    Original     		PDF MOCD217 MOCD217 3750VRMS 10mAIF, 500VDC DC93134

    NTE3086

    Abstract: No abstract text available
    Text: NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability.


    Original     		PDF NTE3086 NTE3086 100mW

    MOCD208

    Abstract: MOCD207 application note D207 MOCD207 D208 RS481A motorola D207
    Text: MOTOROLA Order this document by MOCD207/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD207 MOCD208 [CTR = 100 – 200%] Transistor Output [CTR = 40 – 125%] These devices consist of two gallium arsenide infrared emitting diodes


    Original     		PDF MOCD207/D MOCD207 MOCD208 MOCD207/D* OptoelectronicsMOCD207/D MOCD208 MOCD207 application note D207 MOCD207 D208 RS481A motorola D207

    transistor D207

    Abstract: motorola D207 MOCD208 d207 MOCD207 D208 RS481A
    Text: MOTOROLA Order this document by MOCD207/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD207 MOCD208 [CTR = 100 – 200%] Transistor Output [CTR = 40 – 125%] These devices consist of two gallium arsenide infrared emitting diodes


    Original     		PDF MOCD207/D MOCD207 MOCD208 transistor D207 motorola D207 MOCD208 d207 MOCD207 D208 RS481A

    pc357a

    Abstract: IS357A
    Text: IS357A HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS357A is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.


    Original     		PDF IS357A IS357A 75kVRMS PC357A pc357a

    FPT1

    Abstract: IS181B IS181 IS181A IS181C IS181D TLP181
    Text: IS181 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS181 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.


    Original     		PDF IS181 IS181 75kVRMS TLP181 FPT1 IS181B IS181A IS181C IS181D TLP181

    IS121

    Abstract: TLP121 IS121A IS121B IS121C IS121D
    Text: IS121 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS121 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.


    Original     		PDF IS121 IS121 75kVRMS TLP121 TLP121 IS121A IS121B IS121C IS121D

    IS181B

    Abstract: toshiba tlp181 mini mold transistor fpt1 IS181 IS181A IS181C IS181D TLP181
    Text: IS181 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS181 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.


    Original     		PDF IS181 IS181 75kVRMS TLP181 IS181B toshiba tlp181 mini mold transistor fpt1 IS181A IS181C IS181D TLP181

    IS357D

    Abstract: FPT1 IS357 IS357A IS357B IS357C PC357 Dual transistor TD-100 fpt-1
    Text: IS357 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.


    Original     		PDF IS357 IS357 75kVRMS PC357 IS357D FPT1 IS357A IS357B IS357C PC357 Dual transistor TD-100 fpt-1

    IS357

    Abstract: IS357C PC357 IS357A IS357B IS357D
    Text: IS357 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS357 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.


    Original     		PDF IS357 IS357 75kVRMS PC357 IS357C PC357 IS357A IS357B IS357D

    IS121C

    Abstract: IS121 IS121A IS121B IS121D TLP121 FPT1
    Text: IS121 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS121 is an optically coupled isolator consisting of an infrared light emitting diode and NPN silicon photo transistor in a space efficient dual in line plastic package.


    Original     		PDF IS121 IS121 75kVRMS TLP121 IS121C IS121A IS121B IS121D TLP121 FPT1

    Infrared Phototransistor

    Abstract: TPOWER
    Text: Optoisolator Specifications 4N38, 4N38A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. These


    OCR Scan     		PDF 4N38A 4N38A E51868 0110b Infrared Phototransistor TPOWER

    Untitled

    Abstract: No abstract text available
    Text: MCT6H/ MCT62H VISHAY Vishay Telefunken Y Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a photo­ transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.


    OCR Scan     		PDF MCT62H MCT62H 1577C 11-Jan-99 11-Ja

    ge mct2

    Abstract: IC MCT2E IC 1 MCT2E MCT26 GE solid state
    Text: E SOLI» STATE 01 Optoelectronic Specifications DE^3â75Gfll DDlTfl?1! 1 T -W l-S 3 Photon Coupled Isolator MCT2, MCT2E, MCT26 GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State MCT2, MCT2E and MCT26 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor in a dual- -S^ ^ G


    OCR Scan     		PDF 75Gfll MCT26 MCT26 100ii) 50/iA, ge mct2 IC MCT2E IC 1 MCT2E MCT26 GE solid state

    IS-953

    Abstract: GEPS2001
    Text: E SOLI» STATE 01 Optoelectronic Specifications DE § 3 0 7 5 0 0 1 DOnflSfl 0 T ^ J -S3 K' Photon Coupled Isolator GEPS2001 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State GEPS2001 is a gallium arsenide, infrared emit­ ting diode coupled with a silicon phototransistor in a dual-in-line


    OCR Scan     		PDF GEPS2001 GEPS2001 33mW/Â E51868 3fl75DÃ flL-100Ã IS-953

    ic mct2e

    Abstract: IC 1 MCT2E MCT2E characteristics ge mct2 mct2e MCT2 MCT2 GE solid state MCT26
    Text: G E SOLID STATE 01 DE Optoelectronic Specifications T 3a75afli o n n a ? M t 1~" I- Photon Coupled Isolator MCT2, MCT2E, MCT26 GaAs Infrared Em itting Diode & NPN Silicon Photo-Transistor The GE Solid State MCT2, MCT2E and MCT26 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor in a dual­


    OCR Scan     		PDF MCT26 MCT26 E51868 100pi ic mct2e IC 1 MCT2E MCT2E characteristics ge mct2 mct2e MCT2 MCT2 GE solid state

    Diode LT 02 KE

    Abstract: CQY80 608 diode
    Text: G E SOLI» STATE □1 D E | 3 ñ7 S0 ñ l D onaiñ I Optoelectronic Specification* I - 33 Photon Coupled Isolator CQY80 . Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State CQY80 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-transistor in a dual-in-line


    OCR Scan     		PDF -r-m-33 CQY80 33mW/Â Diode LT 02 KE 608 diode

    Untitled

    Abstract: No abstract text available
    Text: G E SOLID STATE 01 Optoelectronic Specifications D E 3 a ? S 0 a i 001%flD 7 I Photon Coupled Isolator4N38,4N38A MIN. Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line


    OCR Scan     		PDF Isolator4N38 4N38A 4N38A 0110b

    H11C2-H11C3

    Abstract: Opto-isolator 50V-RGK
    Text: Optoisofator Spécifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T he HI 1C1, HI 1C2 and H11C3 are gallium arsenide, infrared em itting diodes coupled with light activated silicon controlled rectifiers in a dual in-line package. T hese devices are also


    OCR Scan     		PDF H11C1, H11C2, H11C3 H11C3 H11C2-H11C3 Opto-isolator 50V-RGK

    Untitled

    Abstract: No abstract text available
    Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS tfi] DESCRIPTION [& The H11B series consists of a gallium arsenide infrared em itting diode, coupled with a silicon photodarlington transistor in a dual in-line package. FEATURES


    OCR Scan     		PDF H11B1 H11B2 H11B3 H11B2 H11B3 E90700 ST1603A ST1731 ST1732

    transistors 6822

    Abstract: WORKING PRINCIPLE IR SENSOR passive Infrared-Sensor KRX10 philips pyroelectric infrared sensor sot253 pyroelectric amplifier circuit IEC134 pyroelectric TO-5 M8910
    Text: Philips Components krxio _ J \ _ Supersedes October 1987 data DUAL ELEMENT PYROELECTRIC INFRARED SENSOR Special features: Enhanced IR sensitivity Wide field o f view Pick and place compatible Application:


    OCR Scan     		PDF M89-1058/CC transistors 6822 WORKING PRINCIPLE IR SENSOR passive Infrared-Sensor KRX10 philips pyroelectric infrared sensor sot253 pyroelectric amplifier circuit IEC134 pyroelectric TO-5 M8910

    ST1736

    Abstract: optocouplers H11B1
    Text: PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS H11B1 H11B2 H11B3 PACKAGE DIMENSIONS DESCRIPTION The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-line package. ft ft ft FEATURES


    OCR Scan     		PDF H11B1 H11B2 H11B3 H11B3 E90700 H11B1) H11B2) H11B3) ST1736 optocouplers H11B1

    opto d213

    Abstract: d213 opto MOCD213 T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline Optoisolator MOCD213 Transistor Output [CTR > 100% Min] This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, In a surface


    OCR Scan     		PDF MOCD213 opto d213 d213 opto MOCD213 T