mct6
Abstract: mct6 optocoupler MCT62
Text: MCT6/ MCT62 TELEFUNKEN Semiconductors Dual Channel Optocoupler with Phototransistor Output Description The MCT6 and MCT62 consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages.
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MCT62
MCT62
D-74025
mct6
mct6 optocoupler
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23 TFK 001
Abstract: No abstract text available
Text: MCT6H/ MCT62H Vishay Semiconductors Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
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MCT62H
MCT62H
D-74025
23 TFK 001
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MOCD207
Abstract: two transistor forward
Text: MOCD207 HIGH DENSITY MOUNTING DUAL CHANNEL OPTICALLY COUPLED ISOLATOR Dimensions in mm DESCRIPTION The MOCD207 optically coupled isolator consists of an two infrared light emitting diodes and two NPN silicon photo transistors in a space efficient dual in line plastic package.
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MOCD207
MOCD207
3750VRMS
10mAIF
10mAIF,
500VDC
DC93131
two transistor forward
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MOCD217
Abstract: No abstract text available
Text: MOCD217 HIGH DENSITY MOUNTING DUAL CHANNEL OPTICALLY COUPLED ISOLATOR Dimensions in mm DESCRIPTION The MOCD217 optically coupled isolator consists of an two infrared light emitting diodes and two NPN silicon photo transistors in a space efficient dual in line plastic package.
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MOCD217
MOCD217
3750VRMS
10mAIF,
500VDC
DC93134
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MCT62
Abstract: MCT-6 MCT6
Text: MCT6/MCT62 Dual Channel Optocoupler with Phototransistor Output Description The MCT6 and MCT62 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a
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MCT6/MCT62
MCT62
D-74025
14-Jun-96
MCT-6
MCT6
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MCT6 equivalent
Abstract: MCT62 MCT6
Text: MCT6/MCT62 Dual Channel Optocoupler with Phototransistor Output Description The MCT6 and MCT62 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a
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Original
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MCT6/MCT62
MCT62
D-74025
12-Dec-97
MCT6 equivalent
MCT6
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3 tfk 206
Abstract: tfk Phototransistor TFK 201 DIN 50014 STANDARD Vishay Telefunken tfk transistor MCT62H tfk order
Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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MCT62H
MCT62H
3 tfk 206
tfk Phototransistor
TFK 201
DIN 50014 STANDARD
Vishay Telefunken tfk transistor
tfk order
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MCT62H
Abstract: E-76222 Vishay Telefunken tfk
Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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Original
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MCT62H
MCT62H
D-74025
E-76222
Vishay Telefunken tfk
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Untitled
Abstract: No abstract text available
Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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MCT62H
MCT62H
D-74025
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Infrared Phototransistor
Abstract: TPOWER
Text: Optoisolator Specifications 4N38, 4N38A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. These
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OCR Scan
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4N38A
4N38A
E51868
0110b
Infrared Phototransistor
TPOWER
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Untitled
Abstract: No abstract text available
Text: European “Pro Electron” Registered Types CNY33 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor T he CXY33 is a gallium arsenide, infrared em itting diode coupled with silicon high voltage phototransistors in a dual
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OCR Scan
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CNY33
CXY33
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11d2
Abstract: No abstract text available
Text: Optolsolator Specifications H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor The H11D1-H11D4 are gallium arsenide, infrared emitting diodes coupled with silicon high voltage phototransistors in a dual in-line package. These devices are also available in
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OCR Scan
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H11D1-H11D4
H11D1-H11D4
0110b
11d2
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PDF
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Untitled
Abstract: No abstract text available
Text: O p toisolator S pecification s 4N35, 4N36, 4N37 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T he 4N 35,4N 36,4N 37 are gallium arsenide infrared em itting diodes coupled with a silicon phototransistor in a dual in-line package.
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications H11A1, H11A2, H11A3, H11A4, H11A5 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e HI 1A1 through H11A5 consist o f a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line
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OCR Scan
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H11A1,
H11A2,
H11A3,
H11A4,
H11A5
H11A5
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Untitled
Abstract: No abstract text available
Text: TIL197, TIL198, TIL199, TIL197A, TILI98A, TILI199A TIL197B, TIL198B, TIL199B SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS 8003023 03437. MAY 199C * Gallium-Arsenide Diode Infrared Source
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TIL197,
TIL198,
TIL199,
TIL197A,
TILI98A,
TILI199A
TIL197B,
TIL198B,
TIL199B
E65085
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H11C2-H11C3
Abstract: Opto-isolator 50V-RGK
Text: Optoisofator Spécifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T he HI 1C1, HI 1C2 and H11C3 are gallium arsenide, infrared em itting diodes coupled with light activated silicon controlled rectifiers in a dual in-line package. T hese devices are also
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OCR Scan
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H11C1,
H11C2,
H11C3
H11C3
H11C2-H11C3
Opto-isolator
50V-RGK
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PDF
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VBRC
Abstract: No abstract text available
Text: European “Pro Electron” Registered Types CNY51 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Phototransistor aT he CNY51 consists of a gallium arsenide, infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device is also available in surface-m ount
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OCR Scan
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CNY51
CNY51
VBRC
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Untitled
Abstract: No abstract text available
Text: TIL917, TIL917A, TIL917B, TIL917C, TIL918, TIL918A TIL918B, TIL918C, TIL919, TIL919A, TIL919B, TIL919C SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS SOOS030 - FEBRUARY 1992 • Gallium-Arsenide Diode Infrared Source
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OCR Scan
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TIL917,
TIL917A,
TIL917B,
TIL917C,
TIL918,
TIL918A
TIL918B,
TIL918C,
TIL919,
TIL919A,
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Untitled
Abstract: No abstract text available
Text: MCT6H/ MCT62H VISHAY Vishay Telefunken Y Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
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OCR Scan
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MCT62H
MCT62H
1577C
11-Jan-99
11-Ja
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Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications SL5504 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5504 consists o f a gallium arsenide, infrared em itting diode coupled with a silicon phototransistor in a dual in-line package. T h e SL5504 com plies with UTE requirem ents as per UTE C96-551 ADD2.
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OCR Scan
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SL5504
SL5504
C96-551
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be 303
Abstract: No abstract text available
Text: Optoisolator Specifications SL5511 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5511 consists o f a gallium arsenide, infrared em itting diode coupled with a silicon phototransistor in a dual in-line package. T h e SL5511 com plies with UTE requirem ents as per UTE C96-551 ADD2.
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OCR Scan
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SL5511
SL5511
C96-551
be 303
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PDF
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ge mct2
Abstract: IC MCT2E IC 1 MCT2E MCT26 GE solid state
Text: E SOLI» STATE 01 Optoelectronic Specifications DE^3â75Gfll DDlTfl?1! 1 T -W l-S 3 Photon Coupled Isolator MCT2, MCT2E, MCT26 GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State MCT2, MCT2E and MCT26 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor in a dual- -S^ ^ G
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OCR Scan
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75Gfll
MCT26
MCT26
100ii)
50/iA,
ge mct2
IC MCT2E
IC 1 MCT2E
MCT26 GE solid state
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IS-953
Abstract: GEPS2001
Text: E SOLI» STATE 01 Optoelectronic Specifications DE § 3 0 7 5 0 0 1 DOnflSfl 0 T ^ J -S3 K' Photon Coupled Isolator GEPS2001 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State GEPS2001 is a gallium arsenide, infrared emit ting diode coupled with a silicon phototransistor in a dual-in-line
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OCR Scan
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GEPS2001
GEPS2001
33mW/Â
E51868
3fl75DÃ
flL-100Ã
IS-953
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PDF
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ic mct2e
Abstract: IC 1 MCT2E MCT2E characteristics ge mct2 mct2e MCT2 MCT2 GE solid state MCT26
Text: G E SOLID STATE 01 DE Optoelectronic Specifications T 3a75afli o n n a ? M t 1~" I- Photon Coupled Isolator MCT2, MCT2E, MCT26 GaAs Infrared Em itting Diode & NPN Silicon Photo-Transistor The GE Solid State MCT2, MCT2E and MCT26 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor in a dual
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OCR Scan
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MCT26
MCT26
E51868
100pi
ic mct2e
IC 1 MCT2E
MCT2E characteristics
ge mct2
mct2e
MCT2
MCT2 GE solid state
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