transistor 1800MHz
Abstract: No abstract text available
Text: SONY PRELIMINARY DATA SHEET Dual-Band 3 Volt Power Amplifier for GSM900/1800 Applications CXG1047FN - Dual Band The CXG1047 Dual Band GaAs PA is a 3 Stage Power Amplifier that may be used for both GSM900 and GSM1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier
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GSM900/1800
CXG1047FN
CXG1047
GSM900
GSM1800
CXG1047D21
transistor 1800MHz
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irf9424
Abstract: irf942 CXG1047FN DCS1800 GSM900 L8152
Text: CXG1047FN Dual-Band 3V Power Amplifier for GSM900/1800 Applications Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum die-size and package dimensions, it contains one
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CXG1047FN
GSM900/1800
CXG1047FN
GSM900
DCS1800
16PIN
HSOF-16P-02
irf9424
irf942
GSM900
L8152
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irf942
Abstract: irf9424 1760 dual fet 1800mhz rf frequency power amplifier circuit CXG1047FN DCS1800 GSM900 L8152
Text: CXG1047FN Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum die-size and package dimensions, it contains one
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CXG1047FN
GSM900/DCS1800
CXG1047FN
GSM900
DCS1800
16PIN
HSOF-16P-02
irf942
irf9424
1760 dual fet
1800mhz rf frequency power amplifier circuit
GSM900
L8152
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irf942
Abstract: irf9424 CXG1047FN DCS1800 GSM900 DCS-1800
Text: CXG1047FN Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications For the availability of this product, please contact the sales office. Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum
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CXG1047FN
GSM900/DCS1800
CXG1047FN
GSM900
DCS1800
16PIN
HSOF-16P-02
irf942
irf9424
GSM900
DCS-1800
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CHA6517
Abstract: fop 630
Text: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,
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CHA6517
6-18GHz
CHA6517
18GHz
DSCHA65179250
fop 630
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Untitled
Abstract: No abstract text available
Text: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,
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CHA6517
6-18GHz
CHA6517
DSCHA65179250
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Untitled
Abstract: No abstract text available
Text: 2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module SST13LP05 Data Sheet The SST13LP05 is a fully matched, dual-band power amplifier module PAM based on the highly-reliable InGaP/GaAs HBT technology. This PAM provides excellent RF performance, temperature-stable power detectors, and low-current analog on/
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SST13LP05
SST13LP05
11a/b/g
GHz10/
DS75032A
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x-Band High Power Amplifier
Abstract: 8205 MMIC X-band amplifier X-band GaAs pHEMT MMIC Chip x-band mmic 8205 A 8205 datasheet CHA6517 chip 8205 8205 6 pin
Text: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including,
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CHA6517
CHA6517
32dBm
DSCHA6517-8205
x-Band High Power Amplifier
8205
MMIC X-band amplifier
X-band GaAs pHEMT MMIC Chip
x-band mmic
8205 A
8205 datasheet
chip 8205
8205 6 pin
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x-Band High Power Amplifier
Abstract: chip 8205 8205 8205 datasheet CHA6517 x-band power amplifier S 8205 fop 630
Text: CHA6517 RoHS COMPLIANT 6 - 18 GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process, including,
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CHA6517
CHA6517
32dBm
DSCHA6517-8205
x-Band High Power Amplifier
chip 8205
8205
8205 datasheet
x-band power amplifier
S 8205
fop 630
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pt 11400
Abstract: kaba
Text: [□Alpha 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Features • Broad Coverage of Ka-Band ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 GHz ■ Dual Drain Bias ■ 0.25 ¡xm Ti/Pt/Au Gates ■ Passivated Surface Description Alpha’s three-stage reactively-matched Ka-band
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AA038P1-00
pt 11400
kaba
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AP124-93
Abstract: AP125-94 TSSOP-20 2.7 3.5 s band
Text: Preliminary GaAs IC 3 Stage GSM Power Amplifier AP125-94 TSSOP-20 Features • Single Supply, +3.5 V Operation 0.0256 0.65 mm BSC PIN 20 ■ Output Power of 35 dBm 0.009 (0.22 mm) REF. 0.173 (4.40 mm) ± 0.004 (0.10 mm) ■ Efficiency Typically 55% ■ Outstanding Efficiency vs. Supply Voltage
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AP125-94
TSSOP-20
AP124-93
3/99A
AP125-94
TSSOP-20
2.7 3.5 s band
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Untitled
Abstract: No abstract text available
Text: ESAlpha GaAs 1C 3 Stage GSM Power Amplifier AP125-94 TSSCP-20 Features • Single Supply, +3.5 V Operation 0.0256 0.65 mm BSC -0.009 (0.22 mm) REF. P I N 2 0 ^ ^ nQI| M ■ Output Power of 35 dBm 0.173 (4.40 mm) ±0 .004 (0.10 mm) ■ Efficiency Typically 55%
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AP125-94
TSSCP-20
AP124-93
AP125-94
3/99A
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NE800296
Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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AN82901-1
NE800296
NE800196
NE24406
diode deg avalanche zo 150 63
SK3448
ne8002
NE868199
shockley diode
NE800495-4
shockley diode application
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NE800296
Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in
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AN82901-1
24-Hour
NE800296
diode deg avalanche zo 150 63
NE72089
ne8002
SK3448
universal jfet biasing curve graph
gunn diode ghz s-parameter
NE800196
impatt diode
NE800495-4
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GaAs MESFET amplifier with high input impedance
Abstract: mesfet datasheet by motorola DCS1800 GSM900 MMM5062 PCS1900
Text: Fact Sheet Freescale Semiconductor, Inc. MMM5062 QUAD-BAND, SINGLE POWER SUPPLY, POWER AMPLIFIER MODULE Freescale Semiconductor, Inc. For GSM/GPRS Handsets The MMM5062 is a Quad-Band, Single Power Supply, Power Amplifier Module for use in GSM/GPRS cellular
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MMM5062
MMM5062
50-ohm
GSM850ed
MMM5062FACT/D
GaAs MESFET amplifier with high input impedance
mesfet datasheet by motorola
DCS1800
GSM900
PCS1900
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MGF2430A
Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E
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12GHz
MGF4919E
MGF4914E
MGF49T4D
MGF4714AP
MGF4914D
MGF1923
MGF1902B
MGF2430A
MGF4919
MGF1402B
MGF2430
7.1 power amplifier circuit diagram
block diagram of power factor meter
mgf2445
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LNA at 15 GHZ with Ultra high sensitivity
Abstract: MSOP-10 bluetooth transceiver hmc-28 2.4 ghz transmitter radio controlled with seven HBT MMIC Amplifier sot-86 HMC308 HMC310MS8G HMC315 HMC318MS8G
Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION AUTUMN INSIDE. *12 NEW 2000 AMPLIFIERS Hittite HBT Amplifier Product Line Announced! RELEASED!. HBT MMICs Combine High Performance Design Expertise With InGaP GaAs Technology. Hittite has introduced five new InGaP HBT amplifiers
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HMC313
LNA at 15 GHZ with Ultra high sensitivity
MSOP-10
bluetooth transceiver
hmc-28
2.4 ghz transmitter radio controlled with seven
HBT MMIC Amplifier sot-86
HMC308
HMC310MS8G
HMC315
HMC318MS8G
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AP124-93
Abstract: AP125-94 TSSOP-16 rf power amplifier with S Parameters
Text: Preliminary GaAs IC 3 Stage DCS1800/1900 Power Amplifier AP124-93 TSSOP-16 Features • +3.5 V Operation 0.0256 0.65 mm BSC PIN 16 ■ Output Power of 33 dBm 0.009 (0.22 mm) REF. 0.173 (4.40 mm) ± 0.004 (0.10 mm) ■ Efficiency Typically 50% ■ Outstanding Efficiency vs. Supply Voltage
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DCS1800/1900
AP124-93
TSSOP-16
AP125-94
3/99A
AP124-93
TSSOP-16
rf power amplifier with S Parameters
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RF9802
Abstract: No abstract text available
Text: RF9802 QUAD BAND GPRS/LINEAR EDGE TRANSMIT MODULE Features GND RX1 RX2 RX3 19 18 17 2 16 RX4 Integrated Power Flattening Circuit for Lower Power Variation under Mismatch Conditions Amplifier Die GND 3 SP6T 15 ANTENNA ESD Protection RFIN LB 4 14 GND 13 GND
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RF9802
63mmx5
24mmx1
GSM850/EGSM900
DCS1800/PCS1900
RF716x
RF9802
RF9802SB
RF9802PCBA-41X
GSM850/EGSM900/DCS1800/PCS1900
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Untitled
Abstract: No abstract text available
Text: GaAs 1C 3 Stage DCS1800/1900 Power Amplifier ESAlpha AP124-93 TSSCP-16 Features • +3.5 V Operation 0.0256 0.65 mm PIN 16 0.009 (0.22 mm REF. ■ Output Power of 33 dBm 0.173 (4.40 mm 0.252 (6.4 mm) BSC ■ Efficiency Typically 50% ■ Outstanding Efficiency vs. Supply Voltage
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DCS1800/1900
AP124-93
TSSCP-16
TSSOP-16
AP125-94
AP124-93
3/99A
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Untitled
Abstract: No abstract text available
Text: June 2012 OFF-THE-SHELF Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation Hittite Exhibiting at MTT-S 2012! View our product demos in Montreal, June 19 to 21, 2012. Booth #1701 ADC HMC9000 Multi-GHz Quantizer 25 New Featured Products!
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NL-0612
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TRANSISTOR MOTOROLA MAC 223
Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),
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Untitled
Abstract: No abstract text available
Text: GaAs 1C 3 Stage DCS1800/1900 Power Amplifier ESAlpha AP124-93 TSSOP-16 F eat ur e s • +3.5 V Operation 0.0256 0.65 mm PIN 16 0.009 (0.22 mm REF. ■ Output Power of 33 dBm 0.173 (4.40 mm ± 0.004 (0.10 mm), ■ Efficiency Typically 50% 0.252 (6.4 mm) BSC
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DCS1800/1900
AP124-93
TSSOP-16
TSSOP-16
AP125-94
AP124-93
3/99A
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RF9802
Abstract: No abstract text available
Text: RF9802 QUAD BAND GPRS/LINEAR EDGE TRANSMIT MODULE GND RX1 RX2 RX3 18 17 2 16 RX4 Proven PowerStar Architecture Amplifier Die GND 3 SP6T 15 ANTENNA ESD Protection RFIN LB 4 14 GND 13 GND GND 5 Integrated Power Flattening Circuit for Lower Power Variation
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RF9802
63mmx5
24mmx1
GSM850/EGSM900
DCS1800/PCS1900
RF716x
RF9802TR13
RF9802TR7
EIA-481.
DS110217
RF9802
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