IRLML2402
Abstract: IRLML2803 IRLML5103 IRLML6302 IRLML6402 43A MARKING CODE marking 43A sot23 MARKING BS SOT-23 IRLML6401PBF
Text: IRLML6401PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage
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IRLML6401PbF
EIA-481
EIA-541.
IRLML2402
IRLML2803
IRLML5103
IRLML6302
IRLML6402
43A MARKING CODE
marking 43A sot23
MARKING BS SOT-23
IRLML6401PBF
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ZXM61P02F
Abstract: ZXM61P02FTA ZXM61P02FTC D061A DSA003663 MARKING P02
Text: ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=-20V; RDS(ON)=0.60⍀ ID=-0.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM61P02F
ZXM61P02FTA
D-81673
ZXM61P02F
ZXM61P02FTA
ZXM61P02FTC
D061A
DSA003663
MARKING P02
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marking N03
Abstract: 91A 10 91A SOT23 ZXM61N03F ZXM61N03FTA ZXM61N03FTC DSA003663
Text: ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=30V; RDS(ON)=0.22⍀ ID=1.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM61N03F
ZXM61N03FTA
D-81673
marking N03
91A 10
91A SOT23
ZXM61N03F
ZXM61N03FTA
ZXM61N03FTC
DSA003663
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2P02
Abstract: ZXM62P02E6 ZXM62P02E6TA ZXM62P02E6TC marking QG SOT23-6 marking 2P02 S16A DSA003664 D08A
Text: ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=-20V; RDS(ON)=0.20⍀ ID=-2.3A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM62P02E6
OT23-6
OT23-6
ZXM62P02E6TA
D-81673
2P02
ZXM62P02E6
ZXM62P02E6TC
marking QG SOT23-6
marking 2P02
S16A
DSA003664
D08A
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2N02
Abstract: ZXM62N02E6TC ZXM62N02E6 ZXM62N02E6TA TF 2N02 DSA003663
Text: ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=20V; RDS(ON)= 0.1⍀ ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM62N02E6
OT23-6
OT23-6
ZXM62N02E6TA
D-81673
2N02
ZXM62N02E6TC
ZXM62N02E6
ZXM62N02E6TA
TF 2N02
DSA003663
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ZXM61N02F
Abstract: ZXM61N02FTA ZXM61N02FTC top marking G62 DSA003663 n02 mosfet
Text: ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=20V; RDS(ON)=0.18⍀ ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM61N02F
ZXM61N02FTA
D-81673
ZXM61N02F
ZXM61N02FTA
ZXM61N02FTC
top marking G62
DSA003663
n02 mosfet
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ZXM61P03F
Abstract: ZXM61P03FTA ZXM61P03FTC S06A F06A diode DSA003663
Text: ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=-30V; RDS(ON)=0.35⍀; ID=-1.1A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM61P03F
ZXM61P03FTA
D-81673
ZXM61P03F
ZXM61P03FTA
ZXM61P03FTC
S06A
F06A diode
DSA003663
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MOSFET 2n03
Abstract: 2N03 ZXM62N03E6 ZXM62N03E6TA ZXM62N03E6TC DSA003664 2N03 08
Text: ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=30V; RDS(ON)=0.11⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM62N03E6
OT23-6
OT23-6
ZXM62N03E6TA
D-81673
MOSFET 2n03
2N03
ZXM62N03E6
ZXM62N03E6TA
ZXM62N03E6TC
DSA003664
2N03 08
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2P03
Abstract: MARKING 2p03 SOT23-6 ZXM62P03E6 ZXM62P03E6TA ZXM62P03E6TC zxm6* sot23-6 DSA003664
Text: ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=-30V; RDS(ON)=0.15⍀ ID=-2.6A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM62P03E6
OT23-6
OT23-6
ZXM62P03E6TA
D-81673
2P03
MARKING 2p03 SOT23-6
ZXM62P03E6
ZXM62P03E6TC
zxm6* sot23-6
DSA003664
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ZXM63N02
Abstract: MO-187 ZXMD63N02X ZXMD63N02XTA ZXMD63N02XTC DSA003665
Text: ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=20V; RDS(ON)=0.13 ID=2.4A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMD63N02X
ZXMD63N02XTA
D-81673
ZXM63N02
MO-187
ZXMD63N02X
ZXMD63N02XTA
ZXMD63N02XTC
DSA003665
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ZXMP2120FFTA
Abstract: No abstract text available
Text: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,
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ZXMP2120FF
OT23F
D-81541
ZXMP2120FFTA
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Untitled
Abstract: No abstract text available
Text: ZXMP2120FF 200V SOT23F P-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (⍀) ID (mA) -200 28 @ VGS= -10V -137 Description This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability,
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ZXMP2120FF
OT23F
48mbH
D-81541
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D8154
Abstract: ZXMN2F30FH
Text: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.
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ZXMN2F30FH
ZXMN2F30FHTA
ZXMN2F30FH
522-ZXMN2F30FHTA
ZXMN2F30FHTA
D8154
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TS16949
Abstract: ZXMN3F30FH ZXMN3F30FHTA
Text: ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features
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ZXMN3F30FH
ZXMN3F30FHTA
ZXMN3F30ex
D-81541
TS16949
ZXMN3F30FH
ZXMN3F30FHTA
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TS16949
Abstract: ZXMN3F30FH ZXMN3F30FHTA
Text: ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with 4.5V gate drive. Features
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ZXMN3F30FH
ZXMN3F30FHTA
D-81541
TS16949
ZXMN3F30FH
ZXMN3F30FHTA
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diode marking 226
Abstract: TS16949 ZXMN2F30FH ZXMN2F30FHTA
Text: ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.
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ZXMN2F30FH
ZXMN2F30FHTA
D-81541
diode marking 226
TS16949
ZXMN2F30FH
ZXMN2F30FHTA
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ZXMN2F34FHTA
Abstract: TS16949 ZXMN2F34FH
Text: ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive.
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ZXMN2F34FH
ZXMN2F34FHTA
D-81541
ZXMN2F34FHTA
TS16949
ZXMN2F34FH
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Untitled
Abstract: No abstract text available
Text: Product specification ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.
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ZXMN2F34FH
ZXMN2F34FHTA
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Untitled
Abstract: No abstract text available
Text: DMN2990UFA 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS RDS(ON) max ID max TA = +25°C • Low Package Profile, 0.4mm Maximum Package height 0.48mm package footprint, 16 times smaller than SOT23 0.99Ω @ VGS = 4.5V 510mA
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DMN2990UFA
510mA
470mA
380mA
330mA
AEC-Q101
DS35765
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Untitled
Abstract: No abstract text available
Text: Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low onresistance achievable with low (2.5V) gate drive.
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ZXMN2F30FH
ZXMN2F30FHme
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Untitled
Abstract: No abstract text available
Text: Product specification ZXMN3F30FH 30V SOT23 N-channel enhancement mode MOSFET Summary V BR DSS RDS(on) (Ω) ID (A) 30 0.047 @ VGS= 10V 4.6 0.065 @ VGS= 4.5V 4.0 Description This new generation Trench MOSFET from TY features low onresistance achievable with 4.5V gate drive.
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ZXMN3F30FH
ZXMN3F30FHTA
400gs
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DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V
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DMN62D1SFB
DS35252
DMN62D1SFB
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all diodes ratings
Abstract: ZVP1320F marking mt ZVP1320FTA DIODES Inc diodes marking SOT23 component marking code mt FET marking Mt DIODES incorporated
Text: A Product Line of Diodes Incorporated ZVP1320F 200V P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • V BR DSS > -200V RDS(on) ≤ 80Ω @ VGS = -10V Maximum continuous drain current ID = -35mA
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ZVP1320F
-200V
-35mA
AEC-Q101
J-STD-020
MIL-STD-202,
DS33391
all diodes ratings
ZVP1320F
marking mt
ZVP1320FTA
DIODES Inc diodes marking
SOT23 component marking code mt
FET marking Mt
DIODES incorporated
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BS250P
Abstract: ZVP3306A ZVP3310F ZVP3306F BS250F zvp2106a zvp3310a ZVP4105A zvp2110a
Text: Section 3: MOSFGTs P-Channel Devices B V dss from 70V to 100V Driver applications for relays, solenoids and lamps in the Automotive and Industrial Markets are best suited to this range of devices.
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ZVP2110G
ZVP2110A
ZVP3310A
ZVP3310F
OT223
ZVP2106G
ZVP2106A
ZVP3306A
ZVP3306F
ZVP4105A
BS250P
BS250F
zvp3310a
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