27BSC
Abstract: ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC
Text: ZXMC3A18DN8 ADVANCE INFORMATION COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V BR DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that
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ZXMC3A18DN8
27BSC
ZXMC3A18DN8
ZXMC3A18DN8TA
ZXMC3A18DN8TC
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2SK2779
Abstract: FM20 v40150
Text: 2SK2779 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V BR DSS V I D = 100µA, VGS = 0V nA VGS = ±20V I DSS 100 µA VDS = 100V, VGS = 0V ID ±20 A VTH 1.0 ±80 A Re (yfs) 12 35 (Tc = 25ºC)
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2SK2779
2SK2779
FM20
v40150
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9922GEO-HF-3 Dual N-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Supports 1.8V Gate Drive D1 Low On-resistance G1 D2 BV DSS 20V R DS ON G2 16mΩ ID RoHS-compliant, halogen-free S1 6.4A S2
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AP9922GEO-HF-3
AP9922
9922GEO
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transistor substitute 2sc1815
Abstract: demodulator qpsk n27m MPC31
Text: Datasheet MB86662 QPSK Demodulator for Digital Satellite Broadcasting April 2001 Edition 1.00 FME/MM/DS/0401 OVERVIEW The MB86662 is a single-chip demodulator for base band signals of digital satellite broadcasting, compatible to DVB-S Digital Video Broadcast and DSS (Digital Satellite System). It consists of two A/
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MB86662
MB86662
FME/MM/DS/0401
FME/MM/DS/0401
transistor substitute 2sc1815
demodulator qpsk
n27m
MPC31
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PDF
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2SK2779
Abstract: FM20 v40150
Text: 2SK2779 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS min 100 ±20 V ID ±20 A VTH 1.0 ±80 A Re (yfs) 12 35 (Tc = 25ºC) W RDS (on) PD EAS *2 Unit max I GSS
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2SK2779
uncla100
2SK2779
FM20
v40150
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SLA5037
Abstract: ON5100
Text: SLA5037 Absolute maximum ratings N-channel General purpose Electrical characteristics Ta=25°C Symbol Ratings Unit Symbol VDSS VGSS ID 100 ±20 ±10 ±40 (PW≤1ms) 200 V V A A mJ W W °C/W °C/W Vrms °C °C V(BR)DSS IGSS IDSS VTH Re(yfs) ID(pulse) EAS*
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SLA5037
SLA5037
ON5100
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2SK2779
Abstract: FM20 v40150
Text: 2SK2779 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS V ID ±20 A VTH 1.0 ±80 A Re (yfs) 12 35 (Tc = 25ºC) EAS *2 V I D = 100µA, VGS = 0V nA VGS = ±20V 100 µA VDS = 100V, VGS = 0V 2.0
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2SK2779
2SK2779
FM20
v40150
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PDF
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2SK2779
Abstract: FM20
Text: 2SK2779 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS V ID ±20 A VTH 1.0 ±80 A Re (yfs) 12 35 (Tc = 25ºC) EAS *2 V I D = 100µA, VGS = 0V nA VGS = ±20V 100 µA VDS = 100V, VGS = 0V 2.0
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2SK2779
FM100
2SK2779
FM20
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SLA5037
Abstract: No abstract text available
Text: SLA5037 Absolute maximum ratings Ratings VDSS VGSS ID 100 ±20 ±10 ±40 PW≤1ms 200 PT θ j-a θ j-c VISO Tch Tstg Unit V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr •Equivalent circuit diagram 7 4 1 5 Unit Conditions
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SLA5037
100mA
12-pin)
SLA5037
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satellite decoder circuit diagram
Abstract: fujitsu ten Circuit Diagrams MB86662 dvb-s tuner viterbi
Text: Product Profile MB86662 May 2001 Edition 1.10 - QPSK Demodulator LSI for Digital Satellite Broadcasting FME/MM/PP/0501 OVERVIEW The MB86662 is a single-chip demodulator for base band signals of digital satellite broadcasting, compatible to DVB-S Digital Video Broadcast and DSS (Digital Satellite System). It consists of two A/D converters for Ichannel and Q-channel, a QPSK demodulator, and forward-error correction decoder which has Viterbi decoder
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MB86662
FME/MM/PP/0501
MB86662
satellite decoder circuit diagram
fujitsu ten
Circuit Diagrams
dvb-s tuner
viterbi
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2sk1193
Abstract: sanken MOSFET 2SK1191 2SK1366 2SK1368 2SK2243 TO-220F torque transistor 2SK1191 Sanken SH 2SK1178
Text: Bulletin No T03EA0 Oct., 1999 SANKEN MOSFET ●Nch MOS FET ●Pch MOS FET CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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T03EA0
H1-T03EA0-9910010TA
2sk1193
sanken MOSFET
2SK1191
2SK1366
2SK1368
2SK2243
TO-220F torque
transistor 2SK1191
Sanken SH
2SK1178
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2SK1368
Abstract: 2SK1366 2sk1193 2SK1370 2SK2243 MOSFET TOSHIBA 2Sj425 2SK1181 2sj425 2SK1191 2SK2245
Text: Bulletin No T03EA0 Oct., 1999 SANKEN MOSFET ●Nch MOS FET ●Pch MOS FET CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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T03EA0
FM100
2SK2704
2SK1370
2SK2706
2SK1711
2SK2778
2SK1713
2SK1714
2SK1368
2SK1366
2sk1193
2SK1370
2SK2243
MOSFET TOSHIBA 2Sj425
2SK1181
2sj425
2SK1191
2SK2245
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FM2018
Abstract: 2sk1193 2SK1368 fkv550 2SK3332 T03EB0 2SK2245 2SK2943 2SK3460 2SK3199 equivalent
Text: Bulletin No. T03EB0 Nov., 2000 MOS FET CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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T03EB0
H1-T03EB0-0011010TA
FM2018
2sk1193
2SK1368
fkv550
2SK3332
T03EB0
2SK2245
2SK2943
2SK3460
2SK3199 equivalent
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SMD rectifier 729
Abstract: No abstract text available
Text: « P D - 9.1499 International lö R Rectifier • • • • • • IRLL014N PRELIMINARY HEXFET Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated V dss = 55V ^DS on
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IRLL014N
OT-223
D02S274
655gC
SMD rectifier 729
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RFH12N35
Abstract: RFH12N40 RFH12N
Text: Standard Power MOSFETs RFH12N35, RFH12N40 File N u m be r 1630 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM 12 A, 3 5 0 V - 4 0 0 V fusioni = 0 .3 8 f i Features: • • ■ ■ • » SOA is power-dissipation lim ited
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RFH12N35,
RFH12N40
RFH12N35
RFH12N40*
92CS-3723A
AN-7254
AN-7260.
92CS-37236
RFH12N40
RFH12N
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R/CHN 745 diode
Abstract: diode 745
Text: A PT50 M50 PV R A dvanced W.\A p o w e r Te c h n o lo g y “ • R soov 74.5A o.osow POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also
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APT50M50PVR
R/CHN 745 diode
diode 745
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sml50m50jvr
Abstract: No abstract text available
Text: Illl Vrr r = mi SEM E SML50M50JVR LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 500V 77A 0.050Q Faster Switching
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SML50M50JVR
OT-227
sml50m50jvr
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APT50M50JVR
Abstract: 50JVR
Text: A d va n ced W/Æ P o w e r Te c h n o l o g y • R A PT50M 50JVR soov 77a o.osoq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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PT50M
50JVR
OT-227
APT50M50JVR
E145592
APT50M50JVR
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APT50M50JVFR
Abstract: No abstract text available
Text: A d van ced W /Æ P o w e r Te c h n o l o g y • R APT50M 50JVFR soov 77a o.osoq POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT50M
50JVFR
OT-227
APT50M50JVFR
E145592
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PDF
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Untitled
Abstract: No abstract text available
Text: A P T 50 M 50JV F R A dvanced W 7Æ P o w e r Te c h n o l o g y soov 77a 0.0500 POWER MOSV iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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OT-227
APT50M50JVFR
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCED P o w er Te c h n o lo g y APT50M50JVR soov 77A o.osoq POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT50M50JVR
OT-227
E145592
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY b3E Í • GSSTTDT GG01132 SST HAVP A d van ced PO W ER Te c h n o l o g y APT5040BNF 500V 16A 0.40Í2 APT5050BNF 500V 14A 0.50Í2 POWER MOS IV< FAST RECOVERY MOSFET FAMILY N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS
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GG01132
APT5040BNF
APT5050BNF
5040BNF
5050BNF
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: BTE D P0U1EREX INC • TETMbSl 00DMS2Ö b HIPRX JBF245A1 JBF250Ä1 fOMEHSr Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 41 2 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 r-z*\'°io Tentative
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00DMS2Ö
BP107,
JBF245A1
JBF250
Amperes/450-500
consi10V
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apt50m50jvr
Abstract: 0050U
Text: APT50M50JVR A dvanced P o w er Te c h n o l o g y 500V 77A 0.050U POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT50M50JVR
OT-227
APT50M50JVR
MIL-STD-750
OT-227
0050U
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