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    APT50M Price and Stock

    Microchip Technology Inc APT50M65JFLL

    MOSFET N-CH 500V 58A ISOTOP
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    DigiKey APT50M65JFLL Tube 62 1
    • 1 $45.04
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    • 100 $36.5625
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    TME APT50M65JFLL 1
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    Richardson RFPD APT50M65JFLL 1,194 1
    • 1 $40.17
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    Microchip Technology Inc APT50M75JLLU2

    MOSFET N-CH 500V 51A SOT227
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    DigiKey APT50M75JLLU2 Tube 31 1
    • 1 $33.72
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    Avnet Americas APT50M75JLLU2 Tube 25 Weeks 31
    • 1 $33.72
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    Mouser Electronics APT50M75JLLU2 23
    • 1 $32.77
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    Newark APT50M75JLLU2 Bulk 31
    • 1 $33.72
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    Microchip Technology Inc APT50M75JLLU2
    • 1 $33.72
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    Onlinecomponents.com APT50M75JLLU2
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    NAC APT50M75JLLU2 Tube 11
    • 1 $32.11
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    Master Electronics APT50M75JLLU2
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    Microchip Technology Inc APT50M65JLL

    MOSFET N-CH 500V 58A ISOTOP
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    DigiKey APT50M65JLL Tube 20 1
    • 1 $44.15
    • 10 $44.15
    • 100 $35.8375
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    Avnet Americas APT50M65JLL Tube 26 Weeks 20
    • 1 $44.15
    • 10 $44.15
    • 100 $38.12
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    Newark APT50M65JLL Bulk 20
    • 1 $44.15
    • 10 $44.15
    • 100 $38.12
    • 1000 $35.83
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    Microchip Technology Inc APT50M65JLL
    • 1 $44.15
    • 10 $44.15
    • 100 $38.12
    • 1000 $34.98
    • 10000 $33.84
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    TME APT50M65JLL 1
    • 1 $63.84
    • 10 $50.77
    • 100 $50.77
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    NAC APT50M65JLL Tube 8
    • 1 $40.96
    • 10 $40.96
    • 100 $37.72
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    Richardson RFPD APT50M65JLL 20
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    Master Electronics APT50M65JLL
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    • 100 $39.34
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    Microchip Technology Inc APT50M50JVFR

    MOSFET N-CH 500V 77A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT50M50JVFR Tube 6 1
    • 1 $70.97
    • 10 $70.97
    • 100 $57.6
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    Avnet Americas APT50M50JVFR Tube 32 Weeks 10
    • 1 $70.97
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    Mouser Electronics APT50M50JVFR 3
    • 1 $70.97
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    Newark APT50M50JVFR Bulk 10
    • 1 $70.97
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    Microchip Technology Inc APT50M50JVFR
    • 1 $70.97
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    • 100 $61.3
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    NAC APT50M50JVFR Tube 5
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    Richardson RFPD APT50M50JVFR 125 10
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    Avnet Silica APT50M50JVFR 34 Weeks 10
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    EBV Elektronik APT50M50JVFR 33 Weeks 10
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    Master Electronics APT50M50JVFR
    • 1 $68.85
    • 10 $61.36
    • 100 $55.72
    • 1000 $54.88
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    Microchip Technology Inc APT50M85JVR

    MOSFET N-CH 500V 50A ISOTOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey APT50M85JVR Tube 20
    • 1 -
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    • 100 $39.26
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    Avnet Americas APT50M85JVR Tube 26 Weeks 20
    • 1 $39.26
    • 10 $39.26
    • 100 $33.91
    • 1000 $31.9
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    Mouser Electronics APT50M85JVR
    • 1 $39.26
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    Newark APT50M85JVR Bulk 20
    • 1 $39.26
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    Microchip Technology Inc APT50M85JVR
    • 1 $39.26
    • 10 $39.26
    • 100 $33.91
    • 1000 $31.12
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    Onlinecomponents.com APT50M85JVR
    • 1 $38.1
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    • 100 $31.3
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    TME APT50M85JVR 1
    • 1 $56.77
    • 10 $45.15
    • 100 $45.15
    • 1000 $45.15
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    NAC APT50M85JVR Tube 9
    • 1 $36.43
    • 10 $36.43
    • 100 $33.55
    • 1000 $31.1
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    Master Electronics APT50M85JVR
    • 1 $38.1
    • 10 $33.96
    • 100 $31.3
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    Find more APT50M price and stock on Findchips.com

    APT50M Datasheets (109)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT50M38JFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT50M38JFLL Advanced Power Technology POWER MOS 7 500V 91A 0.038 Ohm Original PDF
    APT50M38JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT50M38JLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT50M38JLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT50M50 Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT50M50JFLL Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF
    APT50M50JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT50M50JLC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT50M50JLC Advanced Power Technology POWER MOS VI 500V 77A 0.050 Ohm Original PDF
    APT50M50JLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT50M50JLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF
    APT50M50JLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT50M50JVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT50M50JVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT50M50L2FLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT50M50L2FLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT50M50L2LL Advanced Power Technology POWER MOS 7 500V 87A 0.050 Ohm Original PDF
    APT50M50L2LL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT50M50L2LL Microsemi Power MOS 7 Low Loss MOSFET Original PDF

    APT50M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT50M75JLLU3

    Abstract: mosfet 600V 30A
    Text: APT50M75JLLU3 ISOTOP Buck chopper MOSFET Power Module D Application • AC and DC motor control • Switched Mode Power Supplies G S A A S D G VDSS = 500V RDSon = 75mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Features • Power MOS 7® MOSFETs - Low RDSon


    Original     		PDF APT50M75JLLU3 OT-227) APT50M75JLLU3 mosfet 600V 30A

    APT50M80B2VFR

    Abstract: ED 58A
    Text: APT50M80B2VFR 500V POWER MOS V 58A 0.080W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M80B2VFR Current031) MIL-STD-750 APT50M80B2VFR ED 58A

    apt50m85jvr

    Abstract: No abstract text available
    Text: APT50M85JVR 50A 0.085Ω 500V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M85JVR OT-227 E145592 apt50m85jvr

    diode 356

    Abstract: No abstract text available
    Text: APT50M50L2LL 500V 89A 0.050W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT50M50L2LL O-264 O-264 diode 356

    fast diode SOT-227

    Abstract: No abstract text available
    Text: APT50M38JFLL 500V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel


    Original     		PDF APT50M38JFLL OT-227 fast diode SOT-227

    APT50M75JLLU2

    Abstract: SOT-227 heatsink
    Text: APT50M75JLLU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 75mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT50M75JLLU2 OT-227) APT50M75JLLU2 SOT-227 heatsink

    ed 77A DIODE

    Abstract: 77A DIODE APT50M60L2VR DIODE ED 92
    Text: APT50M60L2VR 500V 77A 0.060W POWER MOS V TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M60L2VR O-264 O-264 APT50M60 ed 77A DIODE 77A DIODE APT50M60L2VR DIODE ED 92

    apt50m75

    Abstract: No abstract text available
    Text: APT50M75JLLU2 ISOTOP Boost chopper MOSFET Power Module K D S K Benefits • Outstanding performance at high frequency operation · Direct mounting to heatsink isolated package · Low junction to case thermal resistance · Very rugged · Low profile D G


    Original     		PDF APT50M75JLLU2 OT-227) apt50m75

    APT50M75B2FLL

    Abstract: APT50M75LFLL
    Text: APT50M75B2FLL APT50M75LFLL 500V 57A 0.075Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M75B2FLL APT50M75LFLL O-264 O-264 O-247 APT50M75B2FLL APT50M75LFLL

    APT50M75B2LL

    Abstract: APT50M75LLL ic power mosfet 100V 57A
    Text: APT50M75B2LL APT50M75LLL 500V 57A 0.075Ω R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT50M75B2LL APT50M75LLL O-264 O-264 O-247 APT50M75B2LL APT50M75LLL ic power mosfet 100V 57A

    Untitled

    Abstract: No abstract text available
    Text: APT50M60JVFR 0.060Ω 500V 63A POWER MOS V FREDFET S S D G Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M60JVFR OT-227

    APT50M80JLC

    Abstract: No abstract text available
    Text: APT50M80JLC 52A 0.080 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT50M80JLC OT-227 APT50M80JLC

    ed 77A DIODE

    Abstract: APT50M50JLC
    Text: APT50M50JLC 77A 0.050 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT50M50JLC OT-227 ed 77A DIODE APT50M50JLC

    APT50M80JLC

    Abstract: 52AJ C25-C34
    Text: APT50M80JLC 52A 0.080 W 500V POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,


    Original     		PDF APT50M80JLC OT-227 APT50M80JLC 52AJ C25-C34

    Untitled

    Abstract: No abstract text available
    Text: APT50M75JLLU2 ISOTOP Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 75m max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • AC and DC motor control  Switched Mode Power Supplies  Power Factor Correction  Brake switch


    Original     		PDF APT50M75JLLU2 OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT50M75JLL 51A 0.075W 500V POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT50M75JLL OT-227

    APT50M80B2VFR

    Abstract: APT50M80LVFR
    Text: APT50M80B2VFR APT50M80LVFR 500V 58A 0.080Ω POWER MOS V FREDFET T-MaxTM Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT50M80B2VFR APT50M80LVFR O-264 O-264 O-247 APT50M80B2VFR APT50M80LVFR

    Untitled

    Abstract: No abstract text available
    Text: APT50M50PVR W 500V 74.5A 0.050W POWER MOS V P-Pack Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also


    Original     		PDF APT50M50PVR

    APT50M80

    Abstract: APT50M80B2LC APT50M80LLC
    Text: APT50M80B2LC APT50M80LLC 500V 58A 0.080W B2LC POWER MOS VITM T-MAX Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT50M80B2LC APT50M80LLC O-264 O-264 APT50M80 O-247 APT50M80 APT50M80B2LC APT50M80LLC

    APT50MC120JCU2

    Abstract: No abstract text available
    Text: APT50MC120JCU2 ISOTOP Boost chopper SiC MOSFET + SiC chopper diode Power module K D VDSS = 1200V RDSon = 40mΩ max @ Tj = 25°C ID = 51A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch


    Original     		PDF APT50MC120JCU2 OT-227) APT50MC120JCU2

    Untitled

    Abstract: No abstract text available
    Text: • R APT50M85JVFR A dvanced W /Æ P o w er Te c h n o lo g y soov POWER MOS V soa o .o s s q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT50M85JVFR OT-227 E145592

    AN 780a

    Abstract: APT45M60BFN APT50M60BFN y381 MC 78 M 05 CG 45M60
    Text: ADVANCED POWER TECHNOLOGY W1 MTE ' D ^ • DESTTCH 4bb ■ AVP : A dvanced W jM ROWER T -3 A -IS 'co ^ ta 000D5Bb ZéÊk T e c h n o l o g y _ APT50M60BFN 500V 78.0A 0.060 W APT45M60BFN 450V 78.0A 0.060 Î Ï POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF APT50M60BFN APT45M60BFN MIL-STD-750 AN 780a y381 MC 78 M 05 CG 45M60

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o l o g y APT50M50JVFR 500V ' POWER MOSV 77A 0.050Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT50M50JVFR OT-227 APT50M50JVFR 00A/I1S,

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y APT50M60JN 500V 71A 0.060Q yiiX"UL Recognized" File No. E145592 S clHïlBHïïJïP ISOTOP* POWER MOS IV( AGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS Parameter Drain-Source Voltage


    OCR Scan     		PDF APT50M60JN E145592 50M60JN OT-227