NF 838 G
Abstract: No abstract text available
Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
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Original
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PDF
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CHA2063a
7-13GHz
CHA2063a
7-13GHz
8-13GHz
18dBm
DSCHA20630096
-05-Apr-00
NF 838 G
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Untitled
Abstract: No abstract text available
Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
|
Original
|
PDF
|
CHA2063a
7-13GHz
CHA2063a
7-13GHz
8-13GHz
18dBm
DSCHA20630096
-05-Apr-00
|
NF 838 G
Abstract: CHA2063A
Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges
|
Original
|
PDF
|
CHA2063a
7-13GHz
CHA2063a
7-13GHz
8-13GHz
18dBm
DSCHA20630096
-05-Apr-00
NF 838 G
|
8-12GHz
Abstract: SS 1603 NF 838 G
Text: CHA2063a 7-13GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2063a is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a PM-HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and
|
Original
|
PDF
|
CHA2063a
7-13GHz
CHA2063a
7-13GHz
8-13GHz
18dBm
DSCHA20630096
-05-Apr-00
8-12GHz
SS 1603
NF 838 G
|