20X12
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SECK Super Bright Orange Features Description z 2.0X1.25mm SMT LED,0.5mm max. thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
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PDF
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KPHCM-2012SECK
2000pcs
JAN/13/2010
KPHCM-2012SECK
DSAE5997
20X12
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SECK Super Bright Orange Features Description z 2.0X1.25mm SMT LED,0.5mm max. thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
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Original
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PDF
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KPHCM-2012SECK
2000pcs
DSAE5997
DEC/22/2011
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SECK PRELIMINARY SPEC Super Bright Orange Features Description z 2.0X1.25mm SMT LED,0.5mm MAX.THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.
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Original
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PDF
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KPHCM-2012SECK
2000PCS
DSAE5997
JUL/02/2007
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SECK Super Bright Orange Features Description 2.0X1.25mm SMT LED,0.5mm max. thickness. The Super Bright Orange device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip.
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Original
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PDF
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KPHCM-2012SECK
2000pcs
DEC/20/2010
DSAE5997
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Untitled
Abstract: No abstract text available
Text: 2.0x1.25mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: KPHCM-2012SECK SUPER BRIGHT ORANGE Features Description ●2.0X1.25mm SMT LED,0.5mm MAX.THICKNESS. The Super Bright Orange device is made with DH InGaAlP ●LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.
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Original
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PDF
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KPHCM-2012SECK
2000PCS
DSAE5997
JAN/10/2007
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