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    Abstract: No abstract text available
    Text: VDSS ID25 IXTQ88N28T Trench Gate Power MOSFET RDS on = = ≤ 280V 88A Ω 44mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 280 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 280 V


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    PDF IXTQ88N28T DS99353B

    IXTQ88N28T

    Abstract: No abstract text available
    Text: Trench Gate Power MOSFET IXTQ88N28T VDSS ID25 RDS on = = ≤ 280V 88A Ω 44mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 280 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 280 V


    Original
    PDF IXTQ88N28T DS99353B IXTQ88N28T