Diode s2
Abstract: DMN2300UFL4
Text: A Product Line of Diodes Incorporated DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • • ID max TA = 25°C Max RDS(on) (Notes 6) 195mΩ @ VGS = 4.5V 2.11A 260mΩ @ VGS = 2.5V
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Original
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DMN2300UFL4
AEC-Q101
DS35946
Diode s2
DMN2300UFL4
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID max TA = +25°C • Footprint of Just 1.3 mm2 • Ultra Low Profile Package - 0.4mm Profile (Note 6) • On Resistance <200mΩ 195mΩ @ VGS = 4.5V 2.11A
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Original
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DMN2300UFL4
AEC-Q101
DS35946
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • • ID max TA = 25°C Max RDS(on) (Notes 6) 195mΩ @ VGS = 4.5V 2.11A 260mΩ @ VGS = 2.5V
|
Original
|
DMN2300UFL4
AEC-Q101
DS35946
|
PDF
|