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    Abstract: No abstract text available
    Text: DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management


    Original     		PDF DMP1080UCB4 AEC-Q101 U-WLB1010-4 DS35827

    WL-CSP1010H6-4

    Abstract: No abstract text available
    Text: DMP1080UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 80mΩ @ VGS = -4.5V -3.3A 93mΩ @ VGS = -2.5V -3.0A V(BR)DSS • • • • • • • -12V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP1080UCB4 AEC-Q101 DS35827 WL-CSP1010H6-4