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    Untitled

    Abstract: No abstract text available
    Text: DMP32D4S 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) Max -30V 2.4Ω @ VGS = -10V 4Ω @ VGS = -4.5V • ID Max @TA = +25C -300mA -250mA Low On-Resistance  ESD Protected Gate to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)


    Original     		PDF DMP32D4S -300mA -250mA AEC-Q101 DS35822

    DMP32D4S-7

    Abstract: No abstract text available
    Text: DMP32D4S 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) Max -30V 2.4 @ VGS = -10V 4 @ VGS = -4.5V • ID Max @ TA = +25C -300mA -250mA Low On-Resistance  ESD Protected Gate to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)


    Original     		PDF DMP32D4S -300mA -250mA AEC-Q101 DS35822 DMP32D4S-7

    MA6216

    Abstract: MA6116
    Text: P j p i G E C P L E S S E Y S i: M 1 C O N D U C T O K S DS3582-2.3 M A 6 1 1 6 & M A 6 2 1 6 RADIATION HARD 2048 X 8 BIT STATIC RAM The MA6116 16k Static RAM is configured as 2048 x 8 bits and manufactured using CMOS-SOS high performance, radiation hard,


    OCR Scan     		PDF DS3582-2 MA6116 MA6216 110ns MA6116) MA6216) 37bflS22 MA6116 MA6216 x6116xxxxx