marking N7
Abstract: No abstract text available
Text: DMN1019UFDE Green 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max 12V 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package ID max TA = +25°C U-DFN2020-6 Type E 11A 10 9A 8A 5A • •
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PDF
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DMN1019UFDE
AEC-Q101
U-DFN2020-6
DS35561
marking N7
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Untitled
Abstract: No abstract text available
Text: DMN1019UFDE Green 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) max 12V 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package ID max TA = +25°C U-DFN2020-6 Type E 11A 10 9A 8A 5A • •
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Original
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PDF
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DMN1019UFDE
U-DFN2020-6
AEC-Q101
DS35561
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Untitled
Abstract: No abstract text available
Text: DMN1019UFDE 12V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features RDS(ON) max Package 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V 12V ID max TA = +25°C • 0.6mm profile – ideal for low profile applications
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Original
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DMN1019UFDE
U-DFN2020-6
AEC-Q101
DS35561
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MARKING N7
Abstract: No abstract text available
Text: DMN1019UFDE 12V N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS 12V Features and Benefits RDS(ON) max ID max TA = 25°C 10mΩ @ VGS = 4.5V 11A 12mΩ @ VGS = 2.5V 10A 14mΩ @ VGS = 1.8V 9A 18mΩ @ VGS = 1.5V 8A 41mΩ @ VGS = 1.2V 5A • • • • • • • •
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Original
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PDF
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DMN1019UFDE
AEC-Q101
DS35561
MARKING N7
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