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    Untitled

    Abstract: No abstract text available
    Text: DMN2065UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 56mΩ @ VGS = 4.5V 2.8A 65mΩ @ VGS = 2.5V 2.6A 93mΩ @ VGS = 1.8V 2.2A 140mΩ @ VGS = 1.5V 1.8A • • • • • • This MOSFET has been designed to minimize the on-state resistance


    Original     		PDF DMN2065UW AEC-Q101 DS35554

    Untitled

    Abstract: No abstract text available
    Text: DMN2065UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 56mΩ @ VGS = 4.5V 2.8A 65mΩ @ VGS = 2.5V 2.6A 93mΩ @ VGS = 1.8V 2.2A 140mΩ @ VGS = 1.5V 1.8A • • • • • • This MOSFET has been designed to minimize the on-state resistance


    Original     		PDF DMN2065UW AEC-Q101 DS35554