Untitled
Abstract: No abstract text available
Text: DSS4160T 60V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2)
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Original
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PDF
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DSS4160T
AEC-Q101
J-STD-020
MIL-STD-202,
DS35531
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Untitled
Abstract: No abstract text available
Text: DSS4160T 60V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > 60V • • IC = 1A high Continuous Collector Current • • ICM = 2A Peak Pulse Current • RCE sat = 280mΩ for a Low Equivalent On-Resistance • Moisture Sensitivity: Level 1 per J-STD-020
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Original
|
PDF
|
DSS4160T
J-STD-020
280mV
MIL-STD-202,
DS35531
|
Untitled
Abstract: No abstract text available
Text: DSS4160T 60V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2)
|
Original
|
PDF
|
DSS4160T
AEC-Q101
J-STD-020
MIL-STD-202,
DS35531
|