Untitled
Abstract: No abstract text available
Text: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V -6.3A -12V
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DMP1022UFDE
AEC-Q101
DS35477
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DMP1022
Abstract: Diode markings 79a DMP1022UFDE
Text: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V
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Original
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PDF
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DMP1022UFDE
AEC-Q101
U-DFN2020-6
J-STD-020and
DS35477
DMP1022
Diode markings 79a
DMP1022UFDE
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diode 79A
Abstract: No abstract text available
Text: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V
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Original
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PDF
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DMP1022UFDE
AEC-Q101
U-DFN2020-6
J-STD-020
DS35477
diode 79A
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Untitled
Abstract: No abstract text available
Text: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features • • • • • • • • ID max RDS(ON) max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V -6.3A -12V
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Original
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PDF
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DMP1022UFDE
AEC-Q101
U-DFN2020-6
DS35477
|
Untitled
Abstract: No abstract text available
Text: DMP1022UFDE 12V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = 25°C 16mΩ @ VGS = -4.5V -9.1A 21.5mΩ @ VGS = -2.5V -7.9A 26mΩ @ VGS = -1.8V -7.0A 32mΩ @ VGS = -1.5V -6.3A V(BR)DSS • • • • •
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Original
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PDF
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DMP1022UFDE
AEC-Q101
U-DFN2020-6
J-STD-020
DS35477
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