Untitled
Abstract: No abstract text available
Text: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance
|
Original
|
DMN62D0SFD
430mA
540mA
AEC-Q101
DS35473
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA N EW PRODU CT V(BR)DSS • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance
|
Original
|
DMN62D0SFD
540mA
430mA
AEC-Q101
DS35473
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance
|
Original
|
DMN62D0SFD
430mA
540mA
AEC-Q101
DS35473
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMN62D0SFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2Ω @ VGS = 10V 540mA 3Ω @ VGS = 5V 430mA V(BR)DSS NEW PRODUCT Features and Benefits • • • • • • • • 60V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance
|
Original
|
DMN62D0SFD
430mA
540mA
AEC-Q101
DS35473
|
PDF
|