DFN1006H4-3
Abstract: DMN2300UFB4 DMN2300UFB4-7B dmn2300u
Text: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V • • • • • • • • ID max TA = 25°C
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Original
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DMN2300UFB4
AEC-Q101
DS35269
DFN1006H4-3
DMN2300UFB4
DMN2300UFB4-7B
dmn2300u
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V • • • • • • • • ID max TA = 25°C
|
Original
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DMN2300UFB4
AEC-Q101
DS35269
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V • • • • • • • • ID TA = +25°C
|
Original
|
DMN2300UFB4
AEC-Q101
DS35269
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • ID max TA = 25°C (Notes 4)
|
Original
|
DMN2300UFB4
AEC-Q101
DS35269
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V • • • • • • • • ID TA = +25°C
|
Original
|
DMN2300UFB4
AEC-Q101
DS35269
|
PDF
|