Untitled
Abstract: No abstract text available
Text: DMP2035UVT -20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 35mΩ @ VGS = -4.5V -6.0A 45mΩ @ VGS = -2.5V -5.2A -20V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMP2035UVT
AEC-Q101
DS35190
|
Untitled
Abstract: No abstract text available
Text: DMP2035UVT -20V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • • • • • • • ID RDS(on) max TA = 25°C 35mΩ @ VGS = -4.5V -6.0A 45mΩ @ VGS = -2.5V -5.2A -20V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMP2035UVT
AEC-Q101
DS35190
|
dmp2035uvt
Abstract: TSOT-26
Text: DMP2035UVT -20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 35mΩ @ VGS = -4.5V -6.0A 45mΩ @ VGS = -2.5V -5.2A -20V Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
|
Original
|
PDF
|
DMP2035UVT
AEC-Q101
DS35190
dmp2035uvt
TSOT-26
|