Untitled
Abstract: No abstract text available
Text: DMG7410SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits • Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 8.0 A • Occupies just 33% of the board area occupied by SO-8 enabling
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DMG7410SFG
AEC-Q101
DS35108
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Untitled
Abstract: No abstract text available
Text: DMG7410SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary V BR DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 8.0 A •
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DMG7410SFG
AEC-Q101
DS35108
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DMG7410SFG
Abstract: No abstract text available
Text: DMG7410SFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features V BR DSS RDS(ON) 30V 20mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V ID TA = 25°C 8.0 A 6.5 A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMG7410SFG
AEC-Q101
DS35108
DMG7410SFG
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DMG7410SFG
Abstract: No abstract text available
Text: DMG7410SFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) ID TA = 25°C 20mΩ @ VGS = 10V 8.0 A 27mΩ @ VGS = 4.5V 6.5 A • • • • • • • Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMG7410SFG
AEC-Q101
PowerDI3333
DS35108
DMG7410SFG
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DMG7410SFG
Abstract: No abstract text available
Text: DMG7410SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary V BR DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 8.0 A •
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Original
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PDF
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DMG7410SFG
AEC-Q101
DS35108
DMG7410SFG
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