dmp1045u
Abstract: diode 3kv 1a DMP1045U-7
Text: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMP1045U
AEC-Q101
DS35051
dmp1045u
diode 3kv 1a
DMP1045U-7
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PDF
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marking G33
Abstract: No abstract text available
Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance Low Input Capacitance 95mΩ @ VGS = -4.5V 3.0A Fast Switching Speed 130mΩ @ VGS = -2.5V 2.5A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
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Original
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DMG3413L
AEC-Q101
DS35051
marking G33
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMG3413L
DS35051
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PDF
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Untitled
Abstract: No abstract text available
Text: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMP1045U
OT-23
DS35051
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A NEW PRODUCT -20V Low On-Resistance Low Input Capacitance
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Original
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DMG3413L
AEC-Q101
DS35051
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PDF
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marking g33
Abstract: DMG3413L g33 sot23
Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMG3413L
AEC-Q101
DS35051
marking g33
DMG3413L
g33 sot23
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PDF
|
Untitled
Abstract: No abstract text available
Text: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance Low Input Capacitance 31mΩ@ VGS = -4.5V 5.2A Fast Switching Speed 4.3A Low Input/Output Leakage ESD Protected Up To 3kV Description
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Original
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DMP1045U
AEC-Q101
DS35051
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PDF
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