DS35051 Search Results

dmp1045u

Abstract: diode 3kv 1a DMP1045U-7
Contextual Info: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

marking G33

Contextual Info: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance  Low Input Capacitance 95mΩ @ VGS = -4.5V 3.0A  Fast Switching Speed 130mΩ @ VGS = -2.5V 2.5A  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Contextual Info: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A NEW PRODUCT -20V Low On-Resistance Low Input Capacitance

marking g33

Abstract: DMG3413L g33 sot23
Contextual Info: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance  Low Input Capacitance 31mΩ@ VGS = -4.5V 5.2A  Fast Switching Speed 4.3A  Low Input/Output Leakage  ESD Protected Up To 3kV Description