Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DS35051 Search Results

    DS35051 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    dmp1045u

    Abstract: diode 3kv 1a DMP1045U-7
    Text: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP1045U AEC-Q101 DS35051 dmp1045u diode 3kv 1a DMP1045U-7

    marking G33

    Abstract: No abstract text available
    Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance  Low Input Capacitance 95mΩ @ VGS = -4.5V 3.0A  Fast Switching Speed 130mΩ @ VGS = -2.5V 2.5A  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)


    Original     		PDF DMG3413L AEC-Q101 DS35051 marking G33

    Untitled

    Abstract: No abstract text available
    Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3413L DS35051

    Untitled

    Abstract: No abstract text available
    Text: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 31mΩ@ VGS = -4.5V 5.2A 45mΩ@ VGS =-2.5V 4.3A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP1045U OT-23 DS35051

    Untitled

    Abstract: No abstract text available
    Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A NEW PRODUCT -20V Low On-Resistance Low Input Capacitance


    Original     		PDF DMG3413L AEC-Q101 DS35051

    marking g33

    Abstract: DMG3413L g33 sot23
    Text: DMG3413L 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 95mΩ @ VGS = -4.5V 3.0A 130mΩ @ VGS = -2.5V 2.5A Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3413L AEC-Q101 DS35051 marking g33 DMG3413L g33 sot23

    Untitled

    Abstract: No abstract text available
    Text: DMP1045U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance  Low Input Capacitance 31mΩ@ VGS = -4.5V 5.2A  Fast Switching Speed 4.3A  Low Input/Output Leakage  ESD Protected Up To 3kV Description


    Original     		PDF DMP1045U AEC-Q101 DS35051