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    Untitled

    Abstract: No abstract text available
    Text: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 15mΩ @ VGS = 4.5V 6.5A 20mΩ @ VGS = 2.5V 5.6A V(BR)DSS • • • • • • • • 24V Low On-Resistance Low Input Capacitance Fast Switching Speed


    Original     		DMG5802LFX AEC-Q101 DS35009 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 15mΩ @ VGS = 4.5V 6.5A 20mΩ @ VGS = 2.5V 5.6A V(BR)DSS • • • • • • • • 24V Low On-Resistance Low Input Capacitance Fast Switching Speed


    Original     		DMG5802LFX AEC-Q101 DS35009 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 15mΩ @ VGS = 4.5V 6.5A 20mΩ @ VGS = 2.5V 5.6A V(BR)DSS • • • • • • • • 24V Low On-Resistance Low Input Capacitance Fast Switching Speed


    Original     		DMG5802LFX AEC-Q101 DFN50nd DS35009 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 15mΩ @ VGS = 4.5V 6.5A 20mΩ @ VGS = 2.5V 5.6A V(BR)DSS • • • • • • • • 24V Low On-Resistance Low Input Capacitance Fast Switching Speed


    Original     		DMG5802LFX AEC-Q101 DS35009 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C 15mΩ @ VGS = 4.5V 6.5A 20mΩ @ VGS = 2.5V 5.6A V(BR)DSS 24V Features •        Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG5802LFX DS35009 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 24V 15mΩ @ VGS = 4.5V 20mΩ @ VGS = 2.5V ID TA = 25°C 6.5A 5.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG5802LFX AEC-Q101 -DFN5020-6 DS35009 PDF