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Untitled Abstract: No abstract text available Text: DMG4466SSS N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Low Gate Resistance Lead Free By Design/RoHS Compliant Note 1	Original	PDF	DMG4466SSS AEC-Q101 J-STD-020 DS32137
G4466 Abstract: G4466SS Text: DMG4466SSS N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Low Gate Resistance Lead Free By Design/RoHS Compliant Note 1	Original	PDF	DMG4466SSS AEC-Q101 J-STD-020 DS32137 G4466 G4466SS
Diodes a2 Abstract: DMG4466SSS DMG4466SSS-13 Text: DMG4466SSS N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Low Gate Resistance Lead Free By Design/RoHS Compliant Note 1	Original	PDF	DMG4466SSS AEC-Q101 J-STD-020 DS32137 Diodes a2 DMG4466SSS DMG4466SSS-13
G4466SS Abstract: dmg4466 DMG4466SSS DMG4466SSS-13 Text: DMG4466SSS N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Low Gate Resistance Lead Free By Design/RoHS Compliant Note 1	Original	PDF	DMG4466SSS AEC-Q101 J-STD-020 DS32137 G4466SS dmg4466 DMG4466SSS DMG4466SSS-13
Untitled Abstract: No abstract text available Text: DMG4466SSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C • Low On-Resistance  Low Input Capacitance 23mΩ @ VGS = 10V 10A  Fast Switching Speed 8A  Low Input/Output Leakage V(BR)DSS 30V Features and Benefits 33mΩ @ VGS = 4.5V	Original	PDF	DMG4466SSS AEC-Q101 DS32137