DS32096
Abstract: No abstract text available
Text: DMS3015SSS N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS ON - minimizes conduction losses
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DMS3015SSS
AEC-Q101
DS32096
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DMS3015SSS
Abstract: DMS3015SSS-13 aa3b DS32096
Text: DMS3015SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS ON - minimizes conduction losses
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Original
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PDF
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DMS3015SSS
AEC-Q101
DS32096
DMS3015SSS
DMS3015SSS-13
aa3b
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S3015SS
Abstract: DMS3015SSS DS32096 DMS3015SSS-13
Text: DMS3015SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency
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Original
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PDF
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DMS3015SSS
AEC-Q101
J-STD-02
DS32096
S3015SS
DMS3015SSS
DMS3015SSS-13
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