Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN2028USS ADV AN CE I N FORM AT I ON 20V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • • • • • • • • ID max V BR DSS RDS(on) max TA = 25°C (Note 3) 20mΩ @ VGS= 4.5V 9.8A 28mΩ @ VGS= 2.5V
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DMN2028USS
AEC-Q101
DS32075
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DMN2028USS
Abstract: DMN2028USS-13 N2028
Text: DMN2028USS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) ID 20mΩ @ VGS= 4.5V 5.6A @ TA = 25°C 28mΩ @ VGS= 2.5V 4.7A @ TA = 85°C • • • • • • • • NEW PRODUCT 20V Low On-Resistance Low Input Capacitance
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Original
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DMN2028USS
AEC-Q101
DS32075
DMN2028USS
DMN2028USS-13
N2028
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PDF
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DMN2028USS-13
Abstract: DMN2028USS
Text: A Product Line of Diodes Incorporated DMN2028USS ADVANCE INFORMATION 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • ID max V BR DSS RDS(on) max TA = 25°C (Note 3) 20mΩ @ VGS= 4.5V 9.8A 28mΩ @ VGS= 2.5V
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Original
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DMN2028USS
AEC-Q101
DS32075
DMN2028USS-13
DMN2028USS
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN2028USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ADVANCE INFORMATION ID max V BR DSS RDS(on) max TA = +25°C (Note 6) • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Output Leakage 20mΩ @ VGS= 4.5V
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Original
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DMN2028USS
AEC-Q101
DS32075
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PDF
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