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    Untitled

    Abstract: No abstract text available
    Text: DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance • 24m @ VGS = 4.5V • 29m @ VGS = 2.5V • 37m @ VGS = 1.8V Low Gate Threshold Voltage


    Original     		PDF DMG9926USD AEC-Q101 J-STD-020D DS31757

    N9926UD

    Abstract: No abstract text available
    Text: DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary 24mΩ @ VGS = 4.5V 8A 29mΩ @ VGS = 2.5V 5.5A •     37mΩ @ VGS = 1.8V 4.8A  Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2  Halogen and Antimony Free. “Green” Device (Note 3)


    Original     		PDF DMG9926USD AEC-Q101 DS31757 N9926UD

    N9926UD

    Abstract: DMG9926USD-13 DMG9926USD J-STD-020D
    Text: DMG9926USD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance • 24mΩ @ VGS = 4.5V • 29mΩ @ VGS = 2.5V • 37mΩ @ VGS = 1.8V


    Original     		PDF DMG9926USD AEC-Q101 J-STD-020D DS31757 N9926UD DMG9926USD-13 DMG9926USD J-STD-020D