DMG3415U-13
Abstract: "marking code" 34P sot23 marking code YW DIODE marking 34P sot23
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
AEC-Q101
DS31735
DMG3415U-13
"marking code" 34P sot23
marking code YW DIODE
marking 34P sot23
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"marking code" 34P sot23
Abstract: marking 34P sot23
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V Features • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMG3415U
AEC-Q101
DS31735
"marking code" 34P sot23
marking 34P sot23
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marking 34P sot 23
Abstract: DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 42.5mΩ @ VGS = -4.5V • 53mΩ @ VGS = -2.5V • 71mΩ @ VGS = -1.8V
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Original
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PDF
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DMG3415U
AEC-Q101
OT-23
J-STD-020D
DS31735
marking 34P sot 23
DMG3415U
"marking code" 34P sot23
dmg3415u-7
J-STD-020D
marking code 34P
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMG3415U
DS31735
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DMG3415UQ-7
Abstract: DMG3415U-7 DS31735 marking 34P sot23
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMG3415U
AEC-Q101
DS31735
621-DMG3415U-7
DMG3415U-7
DMG3415UQ-7
DMG3415U-7
marking 34P sot23
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DMG3415U
Abstract: marking 34P sot 23 dmg3415u-7 YM 294 J-STD-020D
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V • 65mΩ @ VGS = -1.8V
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Original
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PDF
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DMG3415U
AEC-Q101
OT-23
J-STD-020D
DS31735
DMG3415U
marking 34P sot 23
dmg3415u-7
YM 294
J-STD-020D
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS R DS(on) max -20V 42.5mΩ @ V GS = -4.5V 71mΩ @ V GS = -1.8V ID T A = +25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (R DS(ON) ) and yet maintain superior switching
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Original
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PDF
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DMG3415U
AEC-Q101
DS31735
|
Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V ID TA = +25°C -4.0A -2.0A Description • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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PDF
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DMG3415U
AEC-Q101
DS31735
|
marking 34P sot23
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMG3415U
AEC-Q101
DS31735
marking 34P sot23
|
Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMG3415U
AEC-Q101
DS31735
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