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    DMN3052LSS-13

    Abstract: J-STD-020D
    Text: DMN3052LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 30mΩ @ VGS = 10V • 40mΩ @ VGS = 4.5V •


    Original     		PDF DMN3052LSS AEC-Q101 J-STD-020D DS31583 DMN3052LSS-13 J-STD-020D

    DMN3025LSS

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGN USE DMN3025LSS DMN3052LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 30mΩ @ VGS = 10V 7.1A 40mΩ @ VGS = 4.5V 6.2A V(BR)DSS 30V Features and Benefits 63mΩ @ VGS = 2.5V 4.9A Description and Applications


    Original     		PDF DMN3025LSS DMN3052LSS AEC-Q101 DS31583 DMN3025LSS

    51A SO 8

    Abstract: No abstract text available
    Text: DMN3052LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features • • • • • • • • Mechanical Data • • Low On-Resistance • 30mΩ @ VGS = 10V • 40mΩ @ VGS = 4.5V • 63mΩ @ VGS = 2.5V


    Original     		PDF DMN3052LSS AEC-Q101 J-STD-020 MIL-STD-202, DS31583 621-DMN3052LSS-13 DMN3052LSS-13 51A SO 8

    DMN3052LSS-13

    Abstract: 51A SO8
    Text: DMN3052LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features • • • • • • • • Mechanical Data • • Low On-Resistance • 30mΩ @ VGS = 10V • 40mΩ @ VGS = 4.5V • 63mΩ @ VGS = 2.5V


    Original     		PDF DMN3052LSS AEC-Q101 J-STD-020 DS31583 DMN3052LSS-13 51A SO8

    Untitled

    Abstract: No abstract text available
    Text: DMN3052LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data Features • • • • • • • • • • Low On-Resistance • 30m @ VGS = 10V • 40m @ VGS = 4.5V • 63m @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN3052LSS AEC-Q101 J-STD-020 MIL-STD-202, DS31583

    Untitled

    Abstract: No abstract text available
    Text: DMN3052LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 30mΩ @ VGS = 10V 7.1A 40mΩ @ VGS = 4.5V 6.2A V(BR)DSS 30V Features and Benefits 63mΩ @ VGS = 2.5V 4.9A Description and Applications Low On-Resistance Low Gate Threshold Voltage


    Original     		PDF DMN3052LSS AEC-Q101 DS31583