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    Untitled

    Abstract: No abstract text available
    Text: DMN3112SSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = +25°C 57mΩ @ VGS = 10V 6.0A 112mΩ @ VGS = 4.5V 3.8A V(BR)DSS 30V Description and Applications •     Low On-Resistance Low Gate Threshold Voltage


    Original     		PDF DMN3112SSS AEC-Q101 DS31582

    marking ANs

    Abstract: DMN3112SSS J-STD-020D N3112
    Text: DMN3112SSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V


    Original     		PDF DMN3112SSS AEC-Q101 J-STD-020D DS31582 marking ANs DMN3112SSS J-STD-020D N3112

    Untitled

    Abstract: No abstract text available
    Text: DMN3112SSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features N EW PRODU CT • • • • • • • • Mechanical Data • • Low On-Resistance • 57m @ VGS = 10V • 112m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN3112SSS AEC-Q101 J-STD-020D MIL-STD-202, DS31582