Untitled
Abstract: No abstract text available
Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V
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Original
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PDF
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DMN3007LSS
AEC-Q101
J-STD-020D
DS31460
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DMN3007LSS
Abstract: N3007 N3007LS DMN3007LSS-13
Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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PDF
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DMN3007LSS
AEC-Q101
J-STD-020
MIL-STD-202,
DS31460
DMN3007LSS
N3007
N3007LS
DMN3007LSS-13
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Untitled
Abstract: No abstract text available
Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7m @ VGS = 10V • 10m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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PDF
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DMN3007LSS
AEC-Q101
J-STD-020
MIL-STD-202
DS31460
|
DMN3007LSS
Abstract: N3007LS
Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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PDF
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DMN3007LSS
AEC-Q101
J-STD-020
MIL-STD-202,
DS31460
621-DMN3007LSS-13
DMN3007LSS-13
DMN3007LSS
N3007LS
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DMN3007LSS
Abstract: DMN3007LSS-13 J-STD-020D N3007LS
Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V Low Gate Threshold Voltage
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Original
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PDF
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DMN3007LSS
AEC-Q101
J-STD-020D
DS31460
DMN3007LSS
DMN3007LSS-13
J-STD-020D
N3007LS
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Untitled
Abstract: No abstract text available
Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON max ID max TA = +25°C 7mΩ @ VGS = 10V 16A 10mΩ @ VGS = 4.5V 13.5A V(BR)DSS 30V Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching
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Original
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PDF
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DMN3007LSS
AEC-Q101
DS31460
|
N3007LS
Abstract: No abstract text available
Text: DMN3007LSS SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 7mΩ @ VGS = 10V • 10mΩ @ VGS = 4.5V
|
Original
|
PDF
|
DMN3007LSS
AEC-Q101
J-STD-020D
DS31460
N3007LS
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